Influence of Cr doping on the structural, optical, and photovoltaic properties of MAPbI2Br thin films

IF 4 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Optical and Quantum Electronics Pub Date : 2025-03-26 DOI:10.1007/s11082-025-08087-2
Badriah S. Almutairi, Saddam Hussain, Muhammad Iftikhar Khan, Mongi Amami, Xueqing Xu, B. A. García-Grajeda, J. M. Mendivil-Escalante
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Abstract

Organic/inorganic halide perovskites (OIHP), including the composition of methylammonium lead iodide bromide (MAPbI2Br), have gained increasing popularity in solar applications because to their exceptional optoelectronic characteristics. Despite the persistence of recombination losses and stability issues, MAPbI2Br remains a viable choice due to its bandgap of around 1.8 eV. The objective of this study is to examine the process of introducing 6% chromium (Cr) into MAPbI2Br in order to address the aforementioned challenges. X-ray diffraction (XRD), current-voltage (J-V), and ultraviolet-visible spectroscopy (UV-vis) studies have demonstrated improved structural, optical, and photovoltaic characteristics of perovskite films doped with 6% Cr. The observed decrease in bandgap (from 1.99 to 1.94 eV) as the crystal size grows (from 21.45 to 32.09 nm) may be attributed to quantum size effects. The band structures of electronic materials undergo changes as the crystal size increases and the confinement of electrons decreases, leading to alterations in the bandgap energy. The Cr–MAPbI2Br device achieves an efficiency of 8.36%, surpassing the 7.40% efficiency of pure MAPbI2Br. This is a significant advancement towards enhancing the safety and effectiveness of perovskite solar cells.

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Cr掺杂对MAPbI2Br薄膜结构、光学和光电性能的影响
有机/无机卤化物钙钛矿(OIHP),包括甲基碘化铅溴化铵(MAPbI2Br)的组成,由于其独特的光电特性,在太阳能应用中越来越受欢迎。尽管存在复合损耗和稳定性问题,但MAPbI2Br仍然是一个可行的选择,因为它的带隙约为1.8 eV。本研究的目的是研究将6%铬(Cr)引入MAPbI2Br的过程,以解决上述挑战。x射线衍射(XRD)、电流电压(J-V)和紫外可见光谱(UV-vis)研究表明,掺6% Cr的钙钛矿薄膜的结构、光学和光伏特性都得到了改善。随着晶体尺寸的增大(从21.45 nm到32.09 nm),带隙(从1.99 eV到1.94 eV)的减小可能是由于量子尺寸效应。电子材料的能带结构随着晶体尺寸的增大和电子约束的减小而发生变化,从而导致带隙能量的变化。Cr-MAPbI2Br器件的效率为8.36%,超过了纯MAPbI2Br器件7.40%的效率。这是提高钙钛矿太阳能电池安全性和有效性的重大进展。
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来源期刊
Optical and Quantum Electronics
Optical and Quantum Electronics 工程技术-工程:电子与电气
CiteScore
4.60
自引率
20.00%
发文量
810
审稿时长
3.8 months
期刊介绍: Optical and Quantum Electronics provides an international forum for the publication of original research papers, tutorial reviews and letters in such fields as optical physics, optical engineering and optoelectronics. Special issues are published on topics of current interest. Optical and Quantum Electronics is published monthly. It is concerned with the technology and physics of optical systems, components and devices, i.e., with topics such as: optical fibres; semiconductor lasers and LEDs; light detection and imaging devices; nanophotonics; photonic integration and optoelectronic integrated circuits; silicon photonics; displays; optical communications from devices to systems; materials for photonics (e.g. semiconductors, glasses, graphene); the physics and simulation of optical devices and systems; nanotechnologies in photonics (including engineered nano-structures such as photonic crystals, sub-wavelength photonic structures, metamaterials, and plasmonics); advanced quantum and optoelectronic applications (e.g. quantum computing, memory and communications, quantum sensing and quantum dots); photonic sensors and bio-sensors; Terahertz phenomena; non-linear optics and ultrafast phenomena; green photonics.
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