Reconfigurable Phototransistor Based on the Interface Trap State of the WS2/Ta2NiSe5 Heterostructure for Logic-in-Memory Operation

Abstract

In recent years, machine vision technology has experienced rapid growth, in which optoelectronic sensing plays a crucial role. With the rising demand for versatile integration of photoelectric sensors, sensors that combine sensing, storage, and computing capabilities are emerging as the next-generation paradigm for high-density, low-power visual processing. Here, with a simplified floating-gate structure based on the interface trap state of the WS₂/Ta₂NiSe₅ heterostructure, we demonstrate a self-driven logic-in-memory optoelectronic transistor with nonvolatile reconfigurable photoresponsivity by controlling the direction and magnitude of the built-in electric field, which can be used for image preprocessing, at the same time capable of achieving multifunctions such as neuromorphic computation, multicolor sensing, positive and negative light response switching, and polarization detection, highlighting the great potential for multifunctional reconfigurable vision devices.