Comprehensive comparison regarding carrier separation characteristics of MoS2/WS2 lateral and vertical heterojunctions

IF 6.9 2区材料科学 Q2 CHEMISTRY, PHYSICAL Applied Surface Science Pub Date : 2025-07-30 Epub Date: 2025-03-26 DOI:10.1016/j.apsusc.2025.163093

Boyu Zhou , Bicheng Wang , Jian Huang, Mengyu Liu, Chenhao Zhang, Ying Ye, Min Liu, Yuxiang Zhang, Xuanli Zheng, Chunmiao Zhang, Yiyan Cao, Feiya Xu, Xu Li, Yaping Wu, Zhiming Wu, Junyong Kang

{"title":"Comprehensive comparison regarding carrier separation characteristics of MoS2/WS2 lateral and vertical heterojunctions","authors":"Boyu Zhou , Bicheng Wang , Jian Huang, Mengyu Liu, Chenhao Zhang, Ying Ye, Min Liu, Yuxiang Zhang, Xuanli Zheng, Chunmiao Zhang, Yiyan Cao, Feiya Xu, Xu Li, Yaping Wu, Zhiming Wu, Junyong Kang","doi":"10.1016/j.apsusc.2025.163093","DOIUrl":null,"url":null,"abstract":"<div><div>Two-dimensional heterojunctions with a type-II band alignment have great potential for high-performance optoelectronic devices due to their inherent carrier separation properties. Herein, we synthesized lateral and vertical MoS<sub>2</sub>/WS<sub>2</sub> heterojunctions through a two-step chemical vapor deposition method and deeply investigated the impact of the interface structures on carrier separation efficiency. The experimental results demonstrate that the structures of MoS<sub>2</sub>/WS<sub>2</sub> heterojunctions can be controlled by adjusting the Mo/S ratio. In addition, lateral heterojunctions exhibit a significantly higher carrier separation efficiency than vertical heterojunctions. Specifically, the interlayer charge transfer time in the lateral heterojunction is approximately 1.2 ps, in contrast to the value of about 4.0 ps in the vertical heterojunction. First-principles simulation reveals that the lateral heterojunction has stronger interface coupling and orbital hybridization, contributing to its faster charge transfer rate. This work demonstrates the superiority of lateral heterojunctions in carrier separation, offering valuable insights for high-performance optoelectronic devices.</div></div>","PeriodicalId":247,"journal":{"name":"Applied Surface Science","volume":"698 ","pages":"Article 163093"},"PeriodicalIF":6.9000,"publicationDate":"2025-07-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Applied Surface Science","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0169433225008074","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"2025/3/26 0:00:00","PubModel":"Epub","JCR":"Q2","JCRName":"CHEMISTRY, PHYSICAL","Score":null,"Total":0}

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Abstract

Two-dimensional heterojunctions with a type-II band alignment have great potential for high-performance optoelectronic devices due to their inherent carrier separation properties. Herein, we synthesized lateral and vertical MoS₂/WS₂ heterojunctions through a two-step chemical vapor deposition method and deeply investigated the impact of the interface structures on carrier separation efficiency. The experimental results demonstrate that the structures of MoS₂/WS₂ heterojunctions can be controlled by adjusting the Mo/S ratio. In addition, lateral heterojunctions exhibit a significantly higher carrier separation efficiency than vertical heterojunctions. Specifically, the interlayer charge transfer time in the lateral heterojunction is approximately 1.2 ps, in contrast to the value of about 4.0 ps in the vertical heterojunction. First-principles simulation reveals that the lateral heterojunction has stronger interface coupling and orbital hybridization, contributing to its faster charge transfer rate. This work demonstrates the superiority of lateral heterojunctions in carrier separation, offering valuable insights for high-performance optoelectronic devices.

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MoS2/WS2横向和纵向异质结载流子分离特性的综合比较

具有ii型带取向的二维异质结由于其固有的载流子分离特性，在高性能光电器件中具有很大的潜力。本文采用两步化学气相沉积法合成了横向和纵向的MoS2/WS2异质结，并深入研究了界面结构对载流子分离效率的影响。实验结果表明，可以通过调节Mo/S比来控制MoS2/WS2异质结的结构。此外，横向异质结的载流子分离效率明显高于垂直异质结。具体来说，横向异质结的层间电荷转移时间约为1.2 ps，而垂直异质结的层间电荷转移时间约为4.0 ps。第一性原理模拟表明，横向异质结具有更强的界面耦合和轨道杂化，有助于其更快的电荷转移速率。这项工作证明了横向异质结在载流子分离中的优越性，为高性能光电器件提供了有价值的见解。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Applied Surface Science 工程技术-材料科学：膜

CiteScore

12.50

自引率

7.50%

发文量

3393

审稿时长

67 days

期刊介绍： Applied Surface Science covers topics contributing to a better understanding of surfaces, interfaces, nanostructures and their applications. The journal is concerned with scientific research on the atomic and molecular level of material properties determined with specific surface analytical techniques and/or computational methods, as well as the processing of such structures.