Study of half metallic ferromagnetism, Curie temperature, and thermoelectric aspects of double perovskite oxides Ba2XMoO6 (X = Cr, Mn, Fe, Co) for spintronic applications

IF 4.6 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Materials Science in Semiconductor Processing Pub Date : 2025-07-01 Epub Date: 2025-03-29 DOI:10.1016/j.mssp.2025.109519
Q. Mahmood
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Abstract

Spintronics is a cutting-edge technology that manipulates both the spin and charge of electrons to control the behaviour of multifunctional devices. Here in the current paper, the half-metallic ferromagnetism, electronic properties, and influence of transport parameters on the magnetic behaviour of double perovskite oxides Ba2XMoO6 (X = Cr, Mn, Fe, Co) are addressed comprehensively by Wien2k and Boltz Trap codes. The ferromagnetic (FM) state exhibits higher optimized energy compared to antiferromagnetic (AFM) and paramagnetic (PM) states, showing enhanced stability. The negative formation energy (−2.65, −2.62, −2.49, −2.46) eV further confirms the thermodynamic stability of these materials. The spin polarization density and magnetic moments (4.0, 5.0, 4.0, 3.0)μB collectively validate the 100 % spin polarization. The Heisenberg model ensures the Curie temperature (340, 331, 325, 313)K at room temperature. The band structures exhibit discrete metallic and insulating characteristics for spin-up and spin-down configurations, thereby consolidating half-metallic ferromagnetism in these materials. The double exchange mechanism, hybridization p-d states, and associated exchange constants influence the exchange splitting energies, which eventually elaborate the function and nature of the spin of electrons that establish ferromagnetism in the studied system. The analysis of the Seebeck coefficient and thermal and electrical conductivities have explained the influence of transport properties on the spin functionality of the electrons. Additionally, the power factor has been reported to assess their thermoelectric performance. The stable structures, above-room temperature ferromagnetism, and ultralow lattice thermal conductivity increase their importance for spintronics.
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双钙钛矿氧化物Ba2XMoO6 (X = Cr, Mn, Fe, Co)自旋电子半金属铁磁性、居里温度和热电特性的研究
自旋电子学是一项尖端技术,它操纵电子的自旋和电荷来控制多功能设备的行为。本文利用Wien2k和Boltz陷阱代码全面研究了双钙钛矿氧化物Ba2XMoO6 (X = Cr, Mn, Fe, Co)的半金属铁磁性、电子性质和输运参数对磁性行为的影响。与反铁磁态(AFM)和顺磁态(PM)相比,铁磁态(FM)表现出更高的优化能量,表现出更高的稳定性。负的形成能(−2.65,−2.62,−2.49,−2.46)eV进一步证实了这些材料的热力学稳定性。自旋极化密度和磁矩(4.0、5.0、4.0、3.0)μB共同验证了100%的自旋极化。海森堡模型保证了室温下的居里温度(340,331,325,313)K。在自旋向上和自旋向下的结构中,带结构表现出离散的金属和绝缘特性,从而在这些材料中巩固了半金属铁磁性。双交换机制、杂化p-d态和相关的交换常数影响交换分裂能,最终阐明了在研究体系中建立铁磁性的电子自旋的功能和性质。塞贝克系数和热导率和电导率的分析解释了输运性质对电子自旋功能的影响。此外,功率因数已被报道评估其热电性能。稳定的结构、室温以上的铁磁性和超低的晶格热导率增加了它们在自旋电子学中的重要性。
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来源期刊
Materials Science in Semiconductor Processing
Materials Science in Semiconductor Processing 工程技术-材料科学:综合
CiteScore
8.00
自引率
4.90%
发文量
780
审稿时长
42 days
期刊介绍: Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.
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