A Snapback-Free and Fast-Switching SOI LIGBT With Integrated Double Self-Biased MOSFET

Abstract

A novel SOI-LIGBT integrating a Double Self-driving MOSFET (DSM) is proposed. The DSM consists of a Self-Biased P-MOS (SBP) with a shorted main gate and a Self-Biased N-MOS (SBN) with a shorted auxiliary gate. These components are designed to function without additional gate signals, and they are driven automatically by the operating state of the LIGBT. During forward conduction, the SBP ( ${V}_{\text {GS,{P}}} \gt {V}_{\text {thp}}$ ) is turned off, whereas the SBN gradually turns on as the ${V}_{\text {CE}}$ increases. The P-buried substrate of SBN creates a potential barrier for electron carriers, effectively eliminating the snapback effect. During reverse conduction, the SBP ( ${V}_{\text {GS,{P}}} \lt {V}_{\text {thp}}$ ) is turned on, and the SBN is turned off, functioning as a P-MOS in series with a PN-junction diode. During turn-off, the SBP ( ${V}_{\text {GS,{P}}} \lt {V}_{\text {thp}}$ ) and the SBN ( ${V}_{\text {GS,{N}}} \gt {V}_{\text {thn}}$ ) are reactivated to extract excess carriers. Consequently, the DSM-LIGBT achieves a superior tradeoff between ${V}_{\text {ON}}$ and ${E}_{\text {OFF}}$ . At ${V}_{\text {ON}} =1.22$ V, the ${E}_{\text {OFF}}$ is reduced by 30%, 30.32%, and 68.23% compared with SBM-LIGBT, TBSA-LIGBT, and SSA-LIGBT, respectively.