Enhancement in Performance and Reliability of Fully Transparent a-IGZO Top-Gate Thin-Film Transistors by a Two-Step Annealing Treatment.

IF 4.3 3区材料科学 Q2 CHEMISTRY, MULTIDISCIPLINARY Nanomaterials Pub Date : 2025-03-19 DOI:10.3390/nano15060460

Shuaiying Zheng, Chengyuan Wang, Shaocong Lv, Liwei Dong, Zhijun Li, Qian Xin, Aimin Song, Jiawei Zhang, Yuxiang Li

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Abstract

A two-step annealing treatment was applied on a fully transparent amorphous InGaZnO4 (a-IGZO) top-gate thin-film transistor (TG-TFT) to improve the device performance. The electrical properties and stabilities of a-IGZO TG TFTs were significantly improved as the first-annealing temperature increased from 150 °C to 350 °C with a 300 °C second-annealing treatment. The a-IGZO TG-TFT with the 300 °C first-annealing treatment demonstrated the overall best performance, which has a mobility of 13.05 cm²/(V·s), a threshold voltage (V_th) of 0.33 V, a subthreshold swing of 130 mV/dec, and a I_on/I_off of 1.73 × 10⁸. The V_th deviation (ΔV_th) was -0.032 V and -0.044 V, respectively, after a 7200 s positive and negative bias stress under the gate bias voltage V_G = ±3 V and V_D = 0.1 V. The Photoluminescence spectra results revealed that the distribution and the density of defects in a-IGZO films were changed after the first-annealing treatment, whereas the X-ray photoelectron spectroscopy results displayed that contents of the oxygen vacancy and Ga-O bond varied in annealed a-IGZO films. In addition, a-IGZO TG-TFTs had achieved a transmittance of over 90%. Research on the effects of the first-annealing treatment will contribute to the fabrication of highly stable top-gate TFTs in the fields of transparent flexible electronics.

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用两步退火处理提高全透明a- igzo顶栅薄膜晶体管的性能和可靠性。

为了提高器件性能，对全透明非晶 InGaZnO4（a-IGZO）顶栅薄膜晶体管（TG-TFT）进行了两步退火处理。随着第一次退火温度从 150 °C 提高到 350 °C，再经过 300 °C 的第二次退火处理，a-IGZO TG TFT 的电气性能和稳定性得到了显著改善。经过 300 °C 第一次退火处理的 a-IGZO TG-TFT 整体性能最佳，其迁移率为 13.05 cm2/(V-s)，阈值电压 (Vth) 为 0.33 V，阈下摆幅为 130 mV/dec，离子/关断为 1.73 × 108。在栅极偏压 VG = ±3 V 和 VD = 0.1 V 条件下，经过 7200 秒的正负偏压应力后，Vth 偏差（ΔVth）分别为-0.032 V 和-0.044 V。光致发光光谱结果表明，a-IGZO 薄膜中缺陷的分布和密度在第一次退火处理后发生了变化，而 X 射线光电子能谱结果表明，退火后的 a-IGZO 薄膜中氧空位和 Ga-O 键的含量发生了变化。此外，a-IGZO TG-TFT 的透光率超过了 90%。对首次退火处理效果的研究将有助于在透明柔性电子器件领域制造出高度稳定的顶栅 TFT。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Nanomaterials NANOSCIENCE & NANOTECHNOLOGY-MATERIALS SCIENCE, MULTIDISCIPLINARY

CiteScore

8.50

自引率

9.40%

发文量

3841

审稿时长

14.22 days

期刊介绍： Nanomaterials (ISSN 2076-4991) is an international and interdisciplinary scholarly open access journal. It publishes reviews, regular research papers, communications, and short notes that are relevant to any field of study that involves nanomaterials, with respect to their science and application. Thus, theoretical and experimental articles will be accepted, along with articles that deal with the synthesis and use of nanomaterials. Articles that synthesize information from multiple fields, and which place discoveries within a broader context, will be preferred. There is no restriction on the length of the papers. Our aim is to encourage scientists to publish their experimental and theoretical research in as much detail as possible. Full experimental or methodical details, or both, must be provided for research articles. Computed data or files regarding the full details of the experimental procedure, if unable to be published in a normal way, can be deposited as supplementary material. Nanomaterials is dedicated to a high scientific standard. All manuscripts undergo a rigorous reviewing process and decisions are based on the recommendations of independent reviewers.