Ultrafast Charge Migration and Efficient Charge Separation in Dodecahedron CsPbBr3–Semiconductor Janus Heterostructures

IF 6.7 1区 物理与天体物理 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY ACS Photonics Pub Date : 2025-03-31 DOI:10.1021/acsphotonics.4c02299
Kaliyamoorthy Justice Babu, Ayushi Shukla, Gurpreet Kaur, Arshdeep Kaur, Ramchandra Saha, Himanshu Bhatt, Hirendra N. Ghosh
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Abstract

Fundamental knowledge of charge transfer mechanism across the interface of heterostructures has sparked a new revolution of interest for next-generation device applications owing to their strong wave function engineering, interlayer coupling, and enhanced charge separation of photogenerated excitons. Janus-type heterostructures characterized by a well-defined interface between metal halide perovskite and semiconductor quantum dots have gained immense attention in high-performance photovoltaic and optoelectronic applications. In the present investigation, dodecahedron CsPbBr3/CdS Janus heterostructure has been synthesized using a single-step colloidal hot injection route. High-resolution transmission electron microscope images clearly indicate direct growth between the (002) plane of dodecahedron CsPbBr3 nanocrystals and the (200) plane of CdS quantum dots. Steady-state optical studies suggest the formation of a charge transfer (CT) complex, which in turn reconfirms the formation of a strong Janus heterostructure between CsPbBr3 and CdS. Further, femtosecond transient absorption spectroscopy has been employed to unravel the ultrafast charge transfer dynamics at the interface of a CsPbBr3/CdS heterostructure after exciting the samples at 350 and 490 nm. The appearance of TA bleach after exciting the heterostructure at 490 nm at the CdS position (460 nm) due to electron transfer from CsPbBr3 to CdS provides compelling evidence for the existence of type II band alignment and affirms the presence of a robust growth in the heterostructure. This study sheds light on the preparation of perovskite-based heterostructures which may pave the way toward high-performance photovoltaic and catalytic applications.

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十二面体 CsPbBr3-Semiconductor Janus 异质结构中的超快电荷迁移和高效电荷分离
跨异质结构界面的电荷转移机制的基本知识引发了下一代器件应用的新革命,因为它们具有强波函数工程,层间耦合和光生激子的增强电荷分离。以金属卤化物钙钛矿和半导体量子点之间界面良好为特征的janus型异质结构在高性能光伏和光电子应用中得到了极大的关注。本研究采用单步胶体热注射的方法合成了十二面体CsPbBr3/CdS Janus异质结构。高分辨率透射电镜图像清晰地显示出十二面体CsPbBr3纳米晶体的(002)面与CdS量子点的(200)面之间的直接生长。稳态光学研究表明,CsPbBr3和CdS之间形成了电荷转移(CT)配合物,这反过来又证实了CsPbBr3和CdS之间形成了强Janus异质结构。此外,利用飞秒瞬态吸收光谱分析了在350 nm和490 nm激发CsPbBr3/CdS异质结构界面处的超快电荷转移动力学。由于电子从CsPbBr3转移到CdS,在490 nm处激发CdS位置(460 nm)的异质结构后,TA漂白剂的出现为II型带对准的存在提供了令人信服的证据,并证实了异质结构的强劲增长。该研究揭示了钙钛矿基异质结构的制备,为高性能光伏和催化应用铺平了道路。
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来源期刊
ACS Photonics
ACS Photonics NANOSCIENCE & NANOTECHNOLOGY-MATERIALS SCIENCE, MULTIDISCIPLINARY
CiteScore
11.90
自引率
5.70%
发文量
438
审稿时长
2.3 months
期刊介绍: Published as soon as accepted and summarized in monthly issues, ACS Photonics will publish Research Articles, Letters, Perspectives, and Reviews, to encompass the full scope of published research in this field.
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