Optical, electrochemical, electronic environments and anti-corrosion properties of V2NTx MXene reinforced rGO nanocomposites

IF 4.6 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Materials Science in Semiconductor Processing Pub Date : 2025-08-01 Epub Date: 2025-04-02 DOI:10.1016/j.mssp.2025.109531
Sanketa Jena , Soumyadeep Laha , Bibhu P. Swain
{"title":"Optical, electrochemical, electronic environments and anti-corrosion properties of V2NTx MXene reinforced rGO nanocomposites","authors":"Sanketa Jena ,&nbsp;Soumyadeep Laha ,&nbsp;Bibhu P. Swain","doi":"10.1016/j.mssp.2025.109531","DOIUrl":null,"url":null,"abstract":"<div><div>Herein, 2D V<sub>2</sub>NT<sub>x</sub> MXene/rGO nanocomposites were synthesised by preferential etching Al layer from the V<sub>2</sub>AlN MAX precursor utilizing NaF and HCl solution and a reducing agent. With the introduction of rGO, the highest intense peak shifted towards a lower 2θ value, indicating an increase in d-spacing in V<sub>2</sub>NT<sub>x</sub> MXene/rGO composites. Accordion-like MXene/rGO structure was observed with layer spacing from 0.20 to 2.1 μm in V<sub>2</sub>NT<sub>x</sub>/rGO nanocomposites. Introducing rGO in V<sub>2</sub>NT<sub>x</sub> MXene protects the surface from undesirable reactions and oxidation. Due to the quantum confinement effect, the Tauc absorption band gaps ranged from 4.75 to 5.11 eV. The surface area and pore diameter of V<sub>2</sub>NT<sub>x</sub> MXene were enhanced after the introduction of rGO, which were 172.52 m<sup>2</sup>/g and 182.82 nm, respectively. However, a significant improvement in the electrochemical measurement of V<sub>2</sub>NT<sub>x</sub> MXene was observed with rGO introduction with the highest specific capacitance (C<sub>p</sub>) of 5.69–126.11 F/g in cyclic voltammetry and 19.22–622.97 F/g in galvanostatic charge-discharge in 1M H<sub>2</sub>SO<sub>4</sub>. The cyclic stability was maintained at 88.3 % after 10,000 continuous charge and discharge cycles. The Energy and power densities ranged from 2.66 to 864.44 Whkg<sup>−1</sup> and 499.59–2499.73 kWkg<sup>−1</sup>, respectively. The (V<sub>2</sub>NT<sub>x</sub>)<sub>0.25</sub>/rGO<sub>0.75</sub> sample showed a corrosion rate of 1.5 × 10<sup>−8</sup> mm/y, which is 1.46 and 4.46 times less than V<sub>2</sub>NT<sub>x</sub> MXene and rGO. In addition to providing an abundance of active sites for electric double-layer capacitors and pseudocapacitance, rGO gave V<sub>2</sub>NT<sub>x</sub> MXene/rGO with increased porosity and an interwoven laminar network, both of which are essential for electrolyte access and charge transmission.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"194 ","pages":"Article 109531"},"PeriodicalIF":4.6000,"publicationDate":"2025-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials Science in Semiconductor Processing","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1369800125002689","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"2025/4/2 0:00:00","PubModel":"Epub","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
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Abstract

Herein, 2D V2NTx MXene/rGO nanocomposites were synthesised by preferential etching Al layer from the V2AlN MAX precursor utilizing NaF and HCl solution and a reducing agent. With the introduction of rGO, the highest intense peak shifted towards a lower 2θ value, indicating an increase in d-spacing in V2NTx MXene/rGO composites. Accordion-like MXene/rGO structure was observed with layer spacing from 0.20 to 2.1 μm in V2NTx/rGO nanocomposites. Introducing rGO in V2NTx MXene protects the surface from undesirable reactions and oxidation. Due to the quantum confinement effect, the Tauc absorption band gaps ranged from 4.75 to 5.11 eV. The surface area and pore diameter of V2NTx MXene were enhanced after the introduction of rGO, which were 172.52 m2/g and 182.82 nm, respectively. However, a significant improvement in the electrochemical measurement of V2NTx MXene was observed with rGO introduction with the highest specific capacitance (Cp) of 5.69–126.11 F/g in cyclic voltammetry and 19.22–622.97 F/g in galvanostatic charge-discharge in 1M H2SO4. The cyclic stability was maintained at 88.3 % after 10,000 continuous charge and discharge cycles. The Energy and power densities ranged from 2.66 to 864.44 Whkg−1 and 499.59–2499.73 kWkg−1, respectively. The (V2NTx)0.25/rGO0.75 sample showed a corrosion rate of 1.5 × 10−8 mm/y, which is 1.46 and 4.46 times less than V2NTx MXene and rGO. In addition to providing an abundance of active sites for electric double-layer capacitors and pseudocapacitance, rGO gave V2NTx MXene/rGO with increased porosity and an interwoven laminar network, both of which are essential for electrolyte access and charge transmission.
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V2NTx - MXene增强氧化石墨烯纳米复合材料的光学、电化学、电子环境和防腐性能
利用NaF、HCl溶液和还原剂,在V2AlN MAX前驱体上优先蚀刻Al层,合成了二维V2NTx MXene/rGO纳米复合材料。随着rGO的加入,V2NTx MXene/rGO复合材料的最高强度峰向较低的2θ值偏移,表明复合材料的d-间距增加。在V2NTx/rGO纳米复合材料中,观察到层间距为0.20 ~ 2.1 μm的手风琴状MXene/rGO结构。在V2NTx中引入氧化石墨烯可以保护表面免受不良反应和氧化。由于量子约束效应,Tauc吸收带隙在4.75 ~ 5.11 eV之间。引入还原氧化石墨烯后,V2NTx MXene的比表面积和孔径增大,分别为172.52 m2/g和182.82 nm。然而,引入还原氧化石墨烯后,V2NTx MXene的电化学测量有了显著改善,循环伏安法的比电容(Cp)最高,为5.69 ~ 126.11 F/g,在1M H2SO4中恒流充放电的比电容(Cp)最高,为19.22 ~ 622.97 F/g。在10000次连续充放电循环后,循环稳定性保持在88.3%。能量密度为2.66 ~ 864.44 kWkg−1,功率密度为499.59 ~ 2499.73 kWkg−1。(V2NTx)0.25/rGO0.75样品的腐蚀速率为1.5 × 10−8 mm/y,分别比V2NTx MXene和rGO低1.46和4.46倍。除了为电双层电容器和伪电容提供丰富的活性位点外,rGO还使V2NTx MXene/rGO具有更高的孔隙率和交织的层流网络,这两者对于电解质的获取和电荷传输都是必不可少的。
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来源期刊
Materials Science in Semiconductor Processing
Materials Science in Semiconductor Processing 工程技术-材料科学:综合
CiteScore
8.00
自引率
4.90%
发文量
780
审稿时长
42 days
期刊介绍: Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.
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