{"title":"Optical, electrochemical, electronic environments and anti-corrosion properties of V2NTx MXene reinforced rGO nanocomposites","authors":"Sanketa Jena , Soumyadeep Laha , Bibhu P. Swain","doi":"10.1016/j.mssp.2025.109531","DOIUrl":null,"url":null,"abstract":"<div><div>Herein, 2D V<sub>2</sub>NT<sub>x</sub> MXene/rGO nanocomposites were synthesised by preferential etching Al layer from the V<sub>2</sub>AlN MAX precursor utilizing NaF and HCl solution and a reducing agent. With the introduction of rGO, the highest intense peak shifted towards a lower 2θ value, indicating an increase in d-spacing in V<sub>2</sub>NT<sub>x</sub> MXene/rGO composites. Accordion-like MXene/rGO structure was observed with layer spacing from 0.20 to 2.1 μm in V<sub>2</sub>NT<sub>x</sub>/rGO nanocomposites. Introducing rGO in V<sub>2</sub>NT<sub>x</sub> MXene protects the surface from undesirable reactions and oxidation. Due to the quantum confinement effect, the Tauc absorption band gaps ranged from 4.75 to 5.11 eV. The surface area and pore diameter of V<sub>2</sub>NT<sub>x</sub> MXene were enhanced after the introduction of rGO, which were 172.52 m<sup>2</sup>/g and 182.82 nm, respectively. However, a significant improvement in the electrochemical measurement of V<sub>2</sub>NT<sub>x</sub> MXene was observed with rGO introduction with the highest specific capacitance (C<sub>p</sub>) of 5.69–126.11 F/g in cyclic voltammetry and 19.22–622.97 F/g in galvanostatic charge-discharge in 1M H<sub>2</sub>SO<sub>4</sub>. The cyclic stability was maintained at 88.3 % after 10,000 continuous charge and discharge cycles. The Energy and power densities ranged from 2.66 to 864.44 Whkg<sup>−1</sup> and 499.59–2499.73 kWkg<sup>−1</sup>, respectively. The (V<sub>2</sub>NT<sub>x</sub>)<sub>0.25</sub>/rGO<sub>0.75</sub> sample showed a corrosion rate of 1.5 × 10<sup>−8</sup> mm/y, which is 1.46 and 4.46 times less than V<sub>2</sub>NT<sub>x</sub> MXene and rGO. In addition to providing an abundance of active sites for electric double-layer capacitors and pseudocapacitance, rGO gave V<sub>2</sub>NT<sub>x</sub> MXene/rGO with increased porosity and an interwoven laminar network, both of which are essential for electrolyte access and charge transmission.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"194 ","pages":"Article 109531"},"PeriodicalIF":4.6000,"publicationDate":"2025-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials Science in Semiconductor Processing","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1369800125002689","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"2025/4/2 0:00:00","PubModel":"Epub","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
Herein, 2D V2NTx MXene/rGO nanocomposites were synthesised by preferential etching Al layer from the V2AlN MAX precursor utilizing NaF and HCl solution and a reducing agent. With the introduction of rGO, the highest intense peak shifted towards a lower 2θ value, indicating an increase in d-spacing in V2NTx MXene/rGO composites. Accordion-like MXene/rGO structure was observed with layer spacing from 0.20 to 2.1 μm in V2NTx/rGO nanocomposites. Introducing rGO in V2NTx MXene protects the surface from undesirable reactions and oxidation. Due to the quantum confinement effect, the Tauc absorption band gaps ranged from 4.75 to 5.11 eV. The surface area and pore diameter of V2NTx MXene were enhanced after the introduction of rGO, which were 172.52 m2/g and 182.82 nm, respectively. However, a significant improvement in the electrochemical measurement of V2NTx MXene was observed with rGO introduction with the highest specific capacitance (Cp) of 5.69–126.11 F/g in cyclic voltammetry and 19.22–622.97 F/g in galvanostatic charge-discharge in 1M H2SO4. The cyclic stability was maintained at 88.3 % after 10,000 continuous charge and discharge cycles. The Energy and power densities ranged from 2.66 to 864.44 Whkg−1 and 499.59–2499.73 kWkg−1, respectively. The (V2NTx)0.25/rGO0.75 sample showed a corrosion rate of 1.5 × 10−8 mm/y, which is 1.46 and 4.46 times less than V2NTx MXene and rGO. In addition to providing an abundance of active sites for electric double-layer capacitors and pseudocapacitance, rGO gave V2NTx MXene/rGO with increased porosity and an interwoven laminar network, both of which are essential for electrolyte access and charge transmission.
期刊介绍:
Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy.
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Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.