Ekpenyong O. Okon , Gideon E. Mathias , Musa Runde , Mahdi Abdul Kadium Abed , Kowthaman Pathmanathan
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引用次数: 0
Abstract
Petroleum hydrocarbon environmental pollution, particularly naphthalene (NTL), poses a grave threat to ecosystems and human well-being due to its toxicity and persistence. There is an urgent need for proper detection and removal, necessitating the development of highly selective adsorbent materials. In the present work, density functional theory (DFT) was applied to investigate the adsorption feasibility of newly structured Fe-Se@SiCNT, Os-Se@SiCNT, and Ru-Se@SiCNT nanomaterials at the DFT/MN12SX/LANL2DZ level of theory. The adsorption of naphthalene onto these functionalized nanotubes resulted in the creation of stable complexes titled NTL@Fe, NTL@Os, and NTL@Ru, with all structures exhibiting chemisorptive interactions. Among all the materials studied, Fe-Se@SiCNT was determined to possess the highest adsorption affinity, with an adsorption energy of −1.130 eV, indicating a strong interaction. Notably, the pre-adsorption electronic bandgaps of 1.042 eV (Fe-Se@SiCNT), 0.776 eV (Os-Se@SiCNT), and 0.743 eV (Ru-Se@SiCNT) widened significantly after adsorption, suggesting enhanced electrical conductivity. These findings offer a fundamental basis for the rational development of novel nanomaterials for hydrocarbon detection and environmental remediation, and potential applications in industrial safety and atmospheric pollution monitoring.
石油烃环境污染,特别是萘污染,由于其毒性和持久性,对生态系统和人类健康构成严重威胁。迫切需要对其进行适当的检测和去除,因此需要开发高选择性吸附材料。本文应用密度泛函理论(DFT)在DFT/MN12SX/LANL2DZ理论水平上研究了新结构的Fe-Se@SiCNT、Os-Se@SiCNT和Ru-Se@SiCNT纳米材料的吸附可行性。萘在这些功能化纳米管上的吸附产生了稳定的配合物NTL@Fe, NTL@Os和NTL@Ru,所有结构都表现出化学吸附相互作用。在所有被研究的材料中,Fe-Se@SiCNT具有最高的吸附亲和力,吸附能为- 1.130 eV,表明相互作用强。值得注意的是,吸附前1.042 eV (Fe-Se@SiCNT)、0.776 eV (Os-Se@SiCNT)和0.743 eV (Ru-Se@SiCNT)的电子带隙在吸附后明显变宽,表明导电性能增强。这些研究结果为合理开发用于碳氢化合物检测和环境修复的新型纳米材料,以及在工业安全和大气污染监测方面的潜在应用提供了基础。
期刊介绍:
Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy.
Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications.
Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.