Yijie Zhang, XinYi Zhang, Guohe Zhang, Daofeng Zhang, Bo Li, Lei Wang, Jianhui Bu
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引用次数: 0
Abstract
This study analyses various factors that affect the threshold voltage of MOSFETs at deep cryogenic temperatures, including band-tail state, field-assisted ionization, and interface traps. Based on the analysis, a new model is developed for Si-based MOSFETs covering a wide temperature range from 10 to 300 K. The validity of the model is confirmed through experiments of bulk silicon MOSFETs, FDSOI MOSFETs, and n-FinFET.
期刊介绍：
Prediction through modelling forms the basis of engineering design. The computational power at the fingertips of the professional engineer is increasing enormously and techniques for computer simulation are changing rapidly. Engineers need models which relate to their design area and which are adaptable to new design concepts. They also need efficient and friendly ways of presenting, viewing and transmitting the data associated with their models.
The International Journal of Numerical Modelling: Electronic Networks, Devices and Fields provides a communication vehicle for numerical modelling methods and data preparation methods associated with electrical and electronic circuits and fields. It concentrates on numerical modelling rather than abstract numerical mathematics.
Contributions on numerical modelling will cover the entire subject of electrical and electronic engineering. They will range from electrical distribution networks to integrated circuits on VLSI design, and from static electric and magnetic fields through microwaves to optical design. They will also include the use of electrical networks as a modelling medium.
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