FDTD Simulation for Optimization of 3D Two-Layered Au Nanocone SERS Substrates

IF 1.7 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC International Journal of Numerical Modelling-Electronic Networks Devices and Fields Pub Date : 2025-04-02 DOI:10.1002/jnm.70048

Songya Cui, Dongxue Han, Guang Chen, Yufeng Yu, Liang Peng

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Abstract

Surface-enhanced Raman spectroscopy has emerged as a powerful tool for molecular detection, with 3D-nanostructured substrates offering significant advantages in sensitivity enhancement and reproducibility. In this study, finite-difference time-domain methods were performed to optimize the design of 3D two-layered Au nanocone SERS substrates. The electric (E) field distribution and enhancement were systematically analyzed for different nanocone configurations, including variations in the number of nanocones per layer. The results demonstrate that these substrates significantly amplify the E-field intensity, primarily due to multiple plasmon coupling modes. Notably, the E-field strength is approximately 1.5 times higher than that of the single primary Au nanocones. Furthermore, the simulations reveal that E hot spots are predominantly localized at the tips of the nanocones, where the highest field intensities are observed. These findings provide valuable insights for the rational design of high-performance 3D SERS substrates and highlight the potential of two-layered Au nanocone arrays for advanced molecular sensing applications.

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三维两层金纳米锥SERS基板的FDTD仿真优化

表面增强拉曼光谱已成为分子检测的强大工具，3d纳米结构衬底在灵敏度增强和再现性方面具有显着优势。本研究采用时域有限差分方法对三维两层金纳米锥SERS基板进行优化设计。系统分析了不同纳米锥结构的电场分布和增强，包括每层纳米锥数的变化。结果表明，这些衬底显著地放大了电子场强度，主要是由于多个等离子体耦合模式。值得注意的是，电场强度比单一原生金纳米锥高约1.5倍。此外，模拟结果表明，E热点主要集中在纳米锥的尖端，在那里观察到最高的场强度。这些发现为高性能3D SERS衬底的合理设计提供了有价值的见解，并突出了两层金纳米锥阵列在先进分子传感应用中的潜力。

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来源期刊

International Journal of Numerical Modelling-Electronic Networks Devices and Fields 工程技术-工程：电子与电气

CiteScore

4.60

自引率

6.20%

发文量

101

审稿时长

>12 weeks

期刊介绍： Prediction through modelling forms the basis of engineering design. The computational power at the fingertips of the professional engineer is increasing enormously and techniques for computer simulation are changing rapidly. Engineers need models which relate to their design area and which are adaptable to new design concepts. They also need efficient and friendly ways of presenting, viewing and transmitting the data associated with their models. The International Journal of Numerical Modelling: Electronic Networks, Devices and Fields provides a communication vehicle for numerical modelling methods and data preparation methods associated with electrical and electronic circuits and fields. It concentrates on numerical modelling rather than abstract numerical mathematics. Contributions on numerical modelling will cover the entire subject of electrical and electronic engineering. They will range from electrical distribution networks to integrated circuits on VLSI design, and from static electric and magnetic fields through microwaves to optical design. They will also include the use of electrical networks as a modelling medium.