Hall field induced resistance oscillations by designed random obstacle arrays

IF 3.7 2区 物理与天体物理 Q1 Physics and Astronomy Physical Review B Pub Date : 2025-04-02 DOI:10.1103/physrevb.111.165301
F. Bartels, J. Strobel, B. Horn-Cosfeld, M. Cerchez, K. Pierz, H. W. Schumacher, D. Mailly, T. Heinzel
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Abstract

Hall field induced resistance oscillations (HIROs) are studied in two-dimensional electron gases with resistivities dominated by scattering at identical but randomly distributed circular obstacles with hard walls. For sufficiently high number densities, these obstacles dominate the HIROs, even though they remain sparse in comparison to the intrinsic scatterers. With increasing obstacle density, we observe a monotonous increase of the HIRO period up to a factor of 2. The results are interpreted in terms of a substantial localization of the Hall field around the designed obstacles, providing an alternative explanation for the HIRO scaling factor γ in pristine two-dimensional electron gases in terms of spatially varying Hall fields. Published by the American Physical Society 2025
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设计随机障碍物阵列的霍尔场诱导电阻振荡
研究了二维电子气体中霍尔场诱导的电阻振荡(HIROs),其电阻率主要受硬壁相同但随机分布的圆形障碍物的散射影响。对于足够高的数量密度,这些障碍支配着HIROs,即使它们与本征散射体相比仍然是稀疏的。随着障碍物密度的增加,我们观察到HIRO周期单调增加,增加了2倍。结果被解释为围绕设计障碍的霍尔场的大量定位,为原始二维电子气体中空间变化的霍尔场的HIRO比例因子γ提供了另一种解释。2025年由美国物理学会出版
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来源期刊
Physical Review B
Physical Review B 物理-物理:凝聚态物理
CiteScore
6.70
自引率
32.40%
发文量
0
审稿时长
3.0 months
期刊介绍: Physical Review B (PRB) is the world’s largest dedicated physics journal, publishing approximately 100 new, high-quality papers each week. The most highly cited journal in condensed matter physics, PRB provides outstanding depth and breadth of coverage, combined with unrivaled context and background for ongoing research by scientists worldwide. PRB covers the full range of condensed matter, materials physics, and related subfields, including: -Structure and phase transitions -Ferroelectrics and multiferroics -Disordered systems and alloys -Magnetism -Superconductivity -Electronic structure, photonics, and metamaterials -Semiconductors and mesoscopic systems -Surfaces, nanoscience, and two-dimensional materials -Topological states of matter
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