The effect of W/Cu phase boundary on the evolution of end-of-range dislocation loop induced by He ion irradiation at 773 K

IF 5.5 2区 材料科学 Q1 MATERIALS SCIENCE, CHARACTERIZATION & TESTING Materials Characterization Pub Date : 2025-03-31 DOI:10.1016/j.matchar.2025.114996
Huaqing Sang , An Yang , Yifan Zhang , Jing Wang , Qian Zhan , Laima Luo , Yucheng Wu
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Abstract

Dislocation loops, a type of irradiation defect, significantly degrade the mechanical properties of nuclear materials. However, the presence of interfaces can effectively mitigate the accumulation of such defects. In this study, the influence of the W/Cu phase boundary (PB) on the evolution of end-of-range (EOR) dislocation loops was investigated using He ion irradiation at 773 K. A simplified approach utilizing Transmission Electron Microscopy (TEM) characterization of EOR dislocations was proposed to analyze the complex defect behavior. Statistical analysis of EOR dislocation loops revealed that the W/Cu phase interface significantly influences the distribution of dislocation loops. On the W side, a low dislocation density region was observed near the phase boundary, where the proportion of b = 1/2 〈111〉 type dislocations was significantly reduced. On the Cu side, the dislocation loop density near the phase boundary was higher than in regions farther from the interface. Additionally, a similar but slightly lower dislocation density region was observed near the phase boundary. This phenomenon can be attributed to two primary mechanisms: the high sink strength of the phase boundary and the elastodynamic image forces exerted by the interface. The former mechanism dominates defect evolution in W, while both mechanisms collectively influence defect behavior on the Cu side. Observations of irradiation defect evolution near W/Cu PB will enhance the fundamental understanding of damage processes in tungsten‑copper divertors for fusion reactors.
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W/Cu相边界对773 K He离子辐照诱导的位错末端环演化的影响
位错环是一种辐照缺陷,严重降低了核材料的力学性能。然而,界面的存在可以有效地减轻这些缺陷的积累。本研究采用773 K的He离子辐照,研究了W/Cu相边界(PB)对EOR位错环演化的影响。提出了一种利用透射电子显微镜(TEM)表征EOR位错的简化方法来分析复杂的缺陷行为。对位错环的统计分析表明,W/Cu相界面对位错环的分布有显著影响。在W侧,在相界附近有一个低位错密度区,在此区,b = 1/2 < 111 >型位错的比例显著降低。在Cu侧,靠近相边界的位错环密度高于远离界面的区域。此外,在相边界附近观察到相似但略低的位错密度区。这种现象可归因于两个主要机制:相边界的高吸收强度和界面施加的弹性动力像力。前一种机制主导W侧缺陷演化,而两种机制共同影响Cu侧缺陷行为。观察W/Cu PB附近的辐照缺陷演变将增强对聚变反应堆钨铜分流器损伤过程的基本理解。
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来源期刊
Materials Characterization
Materials Characterization 工程技术-材料科学:表征与测试
CiteScore
7.60
自引率
8.50%
发文量
746
审稿时长
36 days
期刊介绍: Materials Characterization features original articles and state-of-the-art reviews on theoretical and practical aspects of the structure and behaviour of materials. The Journal focuses on all characterization techniques, including all forms of microscopy (light, electron, acoustic, etc.,) and analysis (especially microanalysis and surface analytical techniques). Developments in both this wide range of techniques and their application to the quantification of the microstructure of materials are essential facets of the Journal. The Journal provides the Materials Scientist/Engineer with up-to-date information on many types of materials with an underlying theme of explaining the behavior of materials using novel approaches. Materials covered by the journal include: Metals & Alloys Ceramics Nanomaterials Biomedical materials Optical materials Composites Natural Materials.
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