Performance optimization of the PbS-quantum dot solar cell by the selection of suitable ETL through numerical simulation

IF 4 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Optical and Quantum Electronics Pub Date : 2025-04-03 DOI:10.1007/s11082-025-08141-z
Satyabrat Pandey, Brijesh Kumar Pandey, Km Pragya Mishra, Jyoti Gupta, Ratan Lal Jaiswal
{"title":"Performance optimization of the PbS-quantum dot solar cell by the selection of suitable ETL through numerical simulation","authors":"Satyabrat Pandey,&nbsp;Brijesh Kumar Pandey,&nbsp;Km Pragya Mishra,&nbsp;Jyoti Gupta,&nbsp;Ratan Lal Jaiswal","doi":"10.1007/s11082-025-08141-z","DOIUrl":null,"url":null,"abstract":"<div><p>Quantum dots composed of lead Sulphide (PbS) are garnering significant interest for their potential to enhance the efficiency of solar cells. These materials exhibit outstanding qualities such as high quantum yield, adjustable band gap, cost-effectiveness, improved stability, and easy tunable electronic properties. Our research achieved an impressive energy conversion efficiency of 23.29% by replacing a suitable electron transport layer (ETL) in the architecture ITO/ETL/PbS-TBAI/MoO<sub>3</sub>/Au. Advanced computational techniques, specifically SCAPS-1D, have been utilized to theoretically study the solar cell, allowing for detailed exploration of device performance before fabrication. Computational modelling is crucial in predicting key parameters such as efficiency, short circuit current density, open circuit voltage, and fill factor, enabling us to optimize the design iteratively and efficiently. Furthermore, we examined energy band alignment, current density–voltage characteristics, quantum efficiency curves, and the composition and arrangement of materials to refine device architecture. This approach not only enhances our understanding of the underlying physics but also accelerates the development of high-performance solar cells based on PbS quantum dots.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 4","pages":""},"PeriodicalIF":4.0000,"publicationDate":"2025-04-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Optical and Quantum Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s11082-025-08141-z","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
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Abstract

Quantum dots composed of lead Sulphide (PbS) are garnering significant interest for their potential to enhance the efficiency of solar cells. These materials exhibit outstanding qualities such as high quantum yield, adjustable band gap, cost-effectiveness, improved stability, and easy tunable electronic properties. Our research achieved an impressive energy conversion efficiency of 23.29% by replacing a suitable electron transport layer (ETL) in the architecture ITO/ETL/PbS-TBAI/MoO3/Au. Advanced computational techniques, specifically SCAPS-1D, have been utilized to theoretically study the solar cell, allowing for detailed exploration of device performance before fabrication. Computational modelling is crucial in predicting key parameters such as efficiency, short circuit current density, open circuit voltage, and fill factor, enabling us to optimize the design iteratively and efficiently. Furthermore, we examined energy band alignment, current density–voltage characteristics, quantum efficiency curves, and the composition and arrangement of materials to refine device architecture. This approach not only enhances our understanding of the underlying physics but also accelerates the development of high-performance solar cells based on PbS quantum dots.

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通过数值模拟选择合适的ETL对pbs量子点太阳能电池进行性能优化
由硫化铅(PbS)组成的量子点因其提高太阳能电池效率的潜力而引起了人们的极大兴趣。这些材料表现出优异的品质,如高量子产率、可调带隙、成本效益、改善的稳定性和易于调谐的电子特性。我们的研究通过替换ITO/ETL/PbS-TBAI/MoO3/Au结构中合适的电子传输层(ETL),实现了23.29%的能量转换效率。先进的计算技术,特别是SCAPS-1D,已经被用于太阳能电池的理论研究,允许在制造前详细探索设备性能。计算建模在预测效率、短路电流密度、开路电压和填充因子等关键参数方面至关重要,使我们能够迭代和有效地优化设计。此外,我们研究了能带对准、电流密度电压特性、量子效率曲线以及材料的组成和排列,以改进器件结构。这种方法不仅增强了我们对底层物理的理解,而且加速了基于PbS量子点的高性能太阳能电池的发展。
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来源期刊
Optical and Quantum Electronics
Optical and Quantum Electronics 工程技术-工程:电子与电气
CiteScore
4.60
自引率
20.00%
发文量
810
审稿时长
3.8 months
期刊介绍: Optical and Quantum Electronics provides an international forum for the publication of original research papers, tutorial reviews and letters in such fields as optical physics, optical engineering and optoelectronics. Special issues are published on topics of current interest. Optical and Quantum Electronics is published monthly. It is concerned with the technology and physics of optical systems, components and devices, i.e., with topics such as: optical fibres; semiconductor lasers and LEDs; light detection and imaging devices; nanophotonics; photonic integration and optoelectronic integrated circuits; silicon photonics; displays; optical communications from devices to systems; materials for photonics (e.g. semiconductors, glasses, graphene); the physics and simulation of optical devices and systems; nanotechnologies in photonics (including engineered nano-structures such as photonic crystals, sub-wavelength photonic structures, metamaterials, and plasmonics); advanced quantum and optoelectronic applications (e.g. quantum computing, memory and communications, quantum sensing and quantum dots); photonic sensors and bio-sensors; Terahertz phenomena; non-linear optics and ultrafast phenomena; green photonics.
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