Unusual stacking observation in plasma sprayed exfoliated MoS2

IF 6.9 2区材料科学 Q2 CHEMISTRY, PHYSICAL Applied Surface Science Pub Date : 2025-04-03 DOI:10.1016/j.apsusc.2025.163127

P.Sai Kiran, K.Vijay Kumar, Niranjan Pandit, Chintham Satish, Anup Kumar Keshri

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Abstract

Twisted 2D TMDs with misorientation of layers have sparked utmost attention towards probing into an escalating new classification of materials with tuned materials characteristics. Yet, research on the scaling up of synthesis protocols and their electrochemical performance remains in its infancy. Herein, we present the first report on the observation of twisting angles (θ = 6.4°, 8.1°, 11.4°, 19°, 20.4°, 22° and 26°) in plasma sprayed exfoliated twisted MoS₂. Raman spectroscopy analysis revealed the induced twist angles in exfoliated MoS₂. Further, HR TEM investigation confirms the existence of twisting with significant moiré pattern in exfoliated MoS₂ layers and corroborates with Raman spectra findings. Twisted MoS₂ layers exhibited better electrochemical performance of 181F/g than bulk MoS₂. This breakthrough observation paves the way to unveil the industrially friendly plasma spraying protocol for the synthesis of other and upcoming twisted 2D materials.

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等离子喷涂剥离二硫化钼异常堆积观察

具有错层取向的扭曲二维 TMD 引发了人们对具有可调材料特性的新材料分类的极大关注。然而，有关扩大合成方案及其电化学性能的研究仍处于起步阶段。在此，我们首次报告了等离子喷涂剥离扭曲 MoS2 中扭曲角度（θ = 6.4°、8.1°、11.4°、19°、20.4°、22° 和 26°）的观察结果。拉曼光谱分析揭示了剥离 MoS2 中的诱导扭曲角。此外，HR TEM 研究证实了剥离的 MoS2 层中存在扭曲，并伴有明显的摩尔纹，这与拉曼光谱的研究结果相吻合。与块状 MoS2 相比，扭曲的 MoS2 层具有更好的电化学性能（181F/g）。这一突破性观察结果为揭示工业友好型等离子喷涂协议，合成其他即将出现的扭曲二维材料铺平了道路。

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来源期刊

Applied Surface Science 工程技术-材料科学：膜

CiteScore

12.50

自引率

7.50%

发文量

3393

审稿时长

67 days

期刊介绍： Applied Surface Science covers topics contributing to a better understanding of surfaces, interfaces, nanostructures and their applications. The journal is concerned with scientific research on the atomic and molecular level of material properties determined with specific surface analytical techniques and/or computational methods, as well as the processing of such structures.