Dual-Layer-Per-Array Operation Using Local Polarization Switching of Ferroelectric Tunnel FETs for Massive Neural Networks (Adv. Electron. Mater. 4/2025)
Jae Seung Woo, Chae Lin Jung, Jin Ho Chang, Minjeong Ryu, Woo Young Choi
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Abstract
Dual-Layer-Per-Array Operations
In article number 2400606, Woo Young Choi and co-workers propose and implement a novel dual-layer-per-array operation in a FeTFET array for large-scale neural network implementations. Owing to independently controllable two current regions, dual-layer vector-matrix multiplication operations can be performed within a single FeTFET synapse array, enabling identical neural network implementation in half the area of the conventional neuromorphic hardware.
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Advanced Electronic Materials is an interdisciplinary forum for peer-reviewed, high-quality, high-impact research in the fields of materials science, physics, and engineering of electronic and magnetic materials. It includes research on physics and physical properties of electronic and magnetic materials, spintronics, electronics, device physics and engineering, micro- and nano-electromechanical systems, and organic electronics, in addition to fundamental research.
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