Boron nitride in AA stacking

IF 38.5 1区材料科学 Q1 CHEMISTRY, PHYSICAL Nature Materials Pub Date : 2025-04-04 DOI:10.1038/s41563-025-02200-2

Jiajie Qi, Kaihui Liu

引用次数: 0

Abstract

Controlled growth of suspended boron nitride layers with metastable AA stacking has been realized on gallium nitride wafers, with surface steps aligning the layer orientation and electron doping stabilizing the stacking configuration.

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AA层中的氮化硼

在氮化镓晶片上实现了具有亚稳AA层的悬浮氮化硼层的控制生长，其表面步骤对准了层向，电子掺杂稳定了层构型。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Nature Materials 工程技术-材料科学：综合

CiteScore

62.20

自引率

0.70%

发文量

221

审稿时长

3.2 months

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