An ultra-high low-frequency SPL piezoelectric MEMS loudspeaker based on sputtered PZT

IF 4.9 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Sensors and Actuators A-physical Pub Date : 2025-04-04 DOI:10.1016/j.sna.2025.116551
Qincheng Zheng , Ke Cao , Chenyu Bai , Xudong Ma , Ning Deng , Yulang Cheng , Yao Lu , Huikai Xie
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Abstract

Piezoelectric MEMS loudspeakers with quasi-closed diaphragm structures have been shown to effectively prevent air leakage and enhance low-frequency sound pressure level (SPL). However, achieving an SPL over 90 dB at 20 Hz for in-ear applications remains challenging due to limitations in excitation voltage and diaphragm size. This work presents a piezoelectric MEMS loudspeaker featuring a 2.7 µm-thick sputtered PZT film and a circular quasi-closed diaphragm with 6 slits, capable of withstanding up to 100 Vpp excitation without mechanical rupture or piezoelectric breakdown. Acoustic characterization using a 711-ear simulator demonstrates that the fabricated loudspeaker achieves an SPL of over 90.4 dB at 20 Hz under 100 Vpp excitation with active power of 0.98 mW. Long-term operation under 100 Vpp excitation shows that after 3 hours, the SPL at 20 Hz remains at 92.4 dB, and after 6 hours, it is 84 dB, demonstrating the reliability of the design. Additionally, free-field testing at a distance of 1 cm reveals an SPL of 91 dB at 400 Hz under 100 Vpp excitation. This study provides an effective approach for enhancing low-frequency SPL in MEMS loudspeakers, paving the way for future applications.
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基于溅射PZT的超高低频声压级压电MEMS扬声器
采用准封闭膜片结构的压电式MEMS扬声器可以有效地防止漏气,提高低频声压级。然而,由于激励电压和隔膜尺寸的限制,入耳式应用在20 Hz下实现超过90 dB的声压级仍然具有挑战性。这项工作提出了一种压电MEMS扬声器,具有2.7 μ m厚的溅射PZT薄膜和具有6个狭缝的圆形准封闭隔膜,能够承受高达100 Vpp的激励而不会发生机械破裂或压电击穿。使用711耳模拟器进行声学表征表明,在100 Vpp激励下,该扬声器在20 Hz下的声压级超过90.4 dB,有功功率为0.98 mW。在100 Vpp激励下长期工作,20 Hz声压级在3 小时后保持在92.4 dB, 6 小时后保持在84 dB,说明设计的可靠性。此外,在距离1 cm处的自由场测试显示,在100 Vpp激励下,400 Hz时声压级为91 dB。本研究为提高MEMS扬声器的低频声压级提供了一种有效的方法,为未来的应用铺平了道路。
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来源期刊
Sensors and Actuators A-physical
Sensors and Actuators A-physical 工程技术-工程:电子与电气
CiteScore
8.10
自引率
6.50%
发文量
630
审稿时长
49 days
期刊介绍: Sensors and Actuators A: Physical brings together multidisciplinary interests in one journal entirely devoted to disseminating information on all aspects of research and development of solid-state devices for transducing physical signals. Sensors and Actuators A: Physical regularly publishes original papers, letters to the Editors and from time to time invited review articles within the following device areas: • Fundamentals and Physics, such as: classification of effects, physical effects, measurement theory, modelling of sensors, measurement standards, measurement errors, units and constants, time and frequency measurement. Modeling papers should bring new modeling techniques to the field and be supported by experimental results. • Materials and their Processing, such as: piezoelectric materials, polymers, metal oxides, III-V and II-VI semiconductors, thick and thin films, optical glass fibres, amorphous, polycrystalline and monocrystalline silicon. • Optoelectronic sensors, such as: photovoltaic diodes, photoconductors, photodiodes, phototransistors, positron-sensitive photodetectors, optoisolators, photodiode arrays, charge-coupled devices, light-emitting diodes, injection lasers and liquid-crystal displays. • Mechanical sensors, such as: metallic, thin-film and semiconductor strain gauges, diffused silicon pressure sensors, silicon accelerometers, solid-state displacement transducers, piezo junction devices, piezoelectric field-effect transducers (PiFETs), tunnel-diode strain sensors, surface acoustic wave devices, silicon micromechanical switches, solid-state flow meters and electronic flow controllers. Etc...
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