Exploring the photogalvanic effect based on three BeP2 monolayers: Towards high-performance optoelectronic devices

Abstract

This study examines the photogalvanic effect in three distinct isomers of BeP₂ monolayers. The results demonstrated that 1H-BeP₂ monolayer possesses pronounced anisotropy on photocurrents along the armchair and zigzag directions, whereas penta-BeP₂ and planar-BeP₂ monolayers exhibit distinctive photocurrent responses. Furthermore, there presents that defect engineering can markedly enhance the photogalvanic effect in three BeP₂ photodetectors. It is noteworthy that the 1H-BeP₂-zigzag photodetector exhibits exceptional sensitivity on polarization detection. Therefore, this study not only broadens the scope for the applications of BeP₂ monolayers in the fields of optoelectronics and nanoelectronics, but also highlights their significant values in the detection of polarization.