Texture-Engineered High-Tc KNbO3–NaNbO3 Piezoceramics with Enhanced d33/d33* and Energy-Harvesting Applicability by BaTiO3 Chemical Modification: An Optimization Approach

IF 4.7 3区 材料科学 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC ACS Applied Electronic Materials Pub Date : 2025-03-20 DOI:10.1021/acsaelm.4c01938
Tejas K. Jadhav, Nikita J. Kapadi and Rahul C. Kambale*, 
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Abstract

This study demonstrates significantly enhanced the piezoelectric properties of lead-free (K0.49Na0.49Ba0.02)(Nb0.98Ti0.02)O3 (KB1) ceramics through a combination of chemical modification and texture engineering. A significant breakthrough was achieved with the textured KB1 ceramic using 9 wt % NaNbO3 template (KB1–9%NNT) particles. This ceramic demonstrated an enhanced piezoelectric charge constant (d33) of 210 pC/N, which is 1.64 times greater than that of nontextured KB1 ceramics. The planar electromechanical coupling coefficient (kp) of KB1–9%NNT was also significantly improved, reaching 33.11, which is 2.28 times higher than that of nontextured KB1. Furthermore, it exhibited a high piezoelectric strain coefficient (d33*) of 330.23 pm/V and a large piezoelectric voltage coefficient (g33) of 101.76 × 10–3 V m/N. These enhanced piezoelectric properties translated into a substantial figure of merit (d33 × g33 = 23.37 × 10–12 m2/N), signifying excellent energy-harvesting capabilities. Under a load resistance of 300 kΩ, it generated an impressive 20.60 V with a current of 68.68 μA, resulting in a power output of 1.41 mW and a power density of 36.09 μW/mm3. This generated power was sufficient to illuminate an NT3314 panel, consisting of 62 red light-emitting diodes (LEDs). These findings highlight the significant potential of the KB1–9%NNT ceramic for high-performance piezoelectric devices and energy-harvesting applications.

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BaTiO3化学改性高tc KNbO3-NaNbO3压电陶瓷增强d33/d33*和能量收集性能的优化方法
本研究表明,通过化学改性和织构工程相结合的方法,可以显著提高无铅(K0.49Na0.49Ba0.02)(Nb0.98Ti0.02)O3 (KB1)陶瓷的压电性能。使用9wt % NaNbO3模板(KB1 - 9% nnt)颗粒的纹理化KB1陶瓷取得了重大突破。该陶瓷的压电电荷常数(d33)为210 pC/N,是无织构KB1陶瓷的1.64倍。KB1 - 9% nnt的平面机电耦合系数(kp)也显著提高,达到33.11,是未织构的KB1的2.28倍。压电应变系数d33*为330.23 pm/V,压电电压系数g33为101.76 × 10-3 V m/N。这些增强的压电特性转化为实质性的优点(d33 × g33 = 23.37 × 10-12 m2/N),表明具有出色的能量收集能力。在负载电阻为300 kΩ的情况下,输出电压为20.60 V,电流为68.68 μA,输出功率为1.41 mW,功率密度为36.09 μW/mm3。产生的能量足以照亮NT3314面板,由62个红色发光二极管(led)组成。这些发现突出了KB1-9%NNT陶瓷在高性能压电器件和能量收集应用方面的巨大潜力。
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来源期刊
CiteScore
7.20
自引率
4.30%
发文量
567
期刊介绍: ACS Applied Electronic Materials is an interdisciplinary journal publishing original research covering all aspects of electronic materials. The journal is devoted to reports of new and original experimental and theoretical research of an applied nature that integrate knowledge in the areas of materials science, engineering, optics, physics, and chemistry into important applications of electronic materials. Sample research topics that span the journal's scope are inorganic, organic, ionic and polymeric materials with properties that include conducting, semiconducting, superconducting, insulating, dielectric, magnetic, optoelectronic, piezoelectric, ferroelectric and thermoelectric. Indexed/​Abstracted: Web of Science SCIE Scopus CAS INSPEC Portico
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