Facile fabrication of self-powered UV-Vis-NIR Photodetector based on Lavandula angustifolia extract

IF 4.9 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Sensors and Actuators A-physical Pub Date : 2025-04-07 DOI:10.1016/j.sna.2025.116545

Ali Akbar Hussaini, Murat Yıldırım

{"title":"Facile fabrication of self-powered UV-Vis-NIR Photodetector based on Lavandula angustifolia extract","authors":"Ali Akbar Hussaini, Murat Yıldırım","doi":"10.1016/j.sna.2025.116545","DOIUrl":null,"url":null,"abstract":"<div><div>Recent advancements in optoelectronics highlight the potential of abundantly available plants as promising semiconductor materials. In this study, we investigated the applicability of <em>Lavandula angustifolia</em> extract as an efficient and affordable self-powered UV-Vis-NIR photodetector with enhanced properties. <em>Lavandula angustifolia</em> extract was obtained using supercritical CO<sub>2</sub> extraction method. It was characterized via ultraviolet–visible spectroscopy, X-ray diffraction, Fourier transform infrared spectroscopy, scanning electron microscopy and energy dispersive X-ray spectroscopy. The band gap was calculated as 3.50 eV, which proves its semiconductor behavior. <em>Lavandula angustifolia</em> extract based thin film was obtained to fabricate UV-Vis-NIR photodetector device. The device has shown excellent responsivity, detectivity, and external quantum efficiency to various wavelengths between 351 and 1600 nm. Under solar light, 0.436 A/W responsivity and 2.16 × 10<sup>10</sup> Jones detectivity were recorded. The device has shown a responsivity of 25.146 mA/W and detectivity of 4.89 × 10<sup>9</sup> Jones at 1000 nm and 0 V bias voltage. The results obtained demonstrate the potential of a <em>Lavandula angustifolia</em> interlayered device for self-powered UV-Vis-NIR photodetector applications.</div></div>","PeriodicalId":21689,"journal":{"name":"Sensors and Actuators A-physical","volume":"389 ","pages":"Article 116545"},"PeriodicalIF":4.9000,"publicationDate":"2025-04-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Sensors and Actuators A-physical","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0924424725003516","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

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Abstract

Recent advancements in optoelectronics highlight the potential of abundantly available plants as promising semiconductor materials. In this study, we investigated the applicability of Lavandula angustifolia extract as an efficient and affordable self-powered UV-Vis-NIR photodetector with enhanced properties. Lavandula angustifolia extract was obtained using supercritical CO₂ extraction method. It was characterized via ultraviolet–visible spectroscopy, X-ray diffraction, Fourier transform infrared spectroscopy, scanning electron microscopy and energy dispersive X-ray spectroscopy. The band gap was calculated as 3.50 eV, which proves its semiconductor behavior. Lavandula angustifolia extract based thin film was obtained to fabricate UV-Vis-NIR photodetector device. The device has shown excellent responsivity, detectivity, and external quantum efficiency to various wavelengths between 351 and 1600 nm. Under solar light, 0.436 A/W responsivity and 2.16 × 10¹⁰ Jones detectivity were recorded. The device has shown a responsivity of 25.146 mA/W and detectivity of 4.89 × 10⁹ Jones at 1000 nm and 0 V bias voltage. The results obtained demonstrate the potential of a Lavandula angustifolia interlayered device for self-powered UV-Vis-NIR photodetector applications.

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薰衣草提取物自供电紫外-可见-近红外光电探测器的简易制备

光电子学的最新进展突出了丰富的植物作为有前途的半导体材料的潜力。在本研究中，我们研究了薰衣草提取物作为一种高效且经济实惠的自供电紫外-可见-近红外光电探测器的适用性。采用超临界CO2萃取法提取薰衣草提取物。通过紫外可见光谱、x射线衍射、傅里叶变换红外光谱、扫描电镜和能量色散x射线光谱对其进行了表征。带隙为3.50 eV，证明了其半导体特性。以薰衣草提取物为基础制备紫外-可见-近红外光电探测器。该器件在351 ~ 1600 nm波长范围内表现出优异的响应性、探测性和外量子效率。在日光下，其响应率为0.436 A/W，琼斯探测率为2.16 × 1010。该器件在1000 nm和0 V偏置电压下的响应度为25.146 mA/W，探测率为4.89 × 109 Jones。实验结果证明了薰衣草层间装置在自供电紫外-可见-近红外光电探测器中的应用潜力。

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来源期刊

Sensors and Actuators A-physical 工程技术-工程：电子与电气

CiteScore

8.10

自引率

6.50%

发文量

630

审稿时长

49 days

期刊介绍： Sensors and Actuators A: Physical brings together multidisciplinary interests in one journal entirely devoted to disseminating information on all aspects of research and development of solid-state devices for transducing physical signals. Sensors and Actuators A: Physical regularly publishes original papers, letters to the Editors and from time to time invited review articles within the following device areas: • Fundamentals and Physics, such as: classification of effects, physical effects, measurement theory, modelling of sensors, measurement standards, measurement errors, units and constants, time and frequency measurement. Modeling papers should bring new modeling techniques to the field and be supported by experimental results. • Materials and their Processing, such as: piezoelectric materials, polymers, metal oxides, III-V and II-VI semiconductors, thick and thin films, optical glass fibres, amorphous, polycrystalline and monocrystalline silicon. • Optoelectronic sensors, such as: photovoltaic diodes, photoconductors, photodiodes, phototransistors, positron-sensitive photodetectors, optoisolators, photodiode arrays, charge-coupled devices, light-emitting diodes, injection lasers and liquid-crystal displays. • Mechanical sensors, such as: metallic, thin-film and semiconductor strain gauges, diffused silicon pressure sensors, silicon accelerometers, solid-state displacement transducers, piezo junction devices, piezoelectric field-effect transducers (PiFETs), tunnel-diode strain sensors, surface acoustic wave devices, silicon micromechanical switches, solid-state flow meters and electronic flow controllers. Etc...