A novel method for through-silicon via characterization based on diffraction fringe analysis

IF 2 3区 工程技术 Q2 MICROSCOPY Ultramicroscopy Pub Date : 2025-04-08 DOI:10.1016/j.ultramic.2025.114136
Pengfei Lin, Kuan Lu, ChaBum Lee
{"title":"A novel method for through-silicon via characterization based on diffraction fringe analysis","authors":"Pengfei Lin,&nbsp;Kuan Lu,&nbsp;ChaBum Lee","doi":"10.1016/j.ultramic.2025.114136","DOIUrl":null,"url":null,"abstract":"<div><div>The precision metrology of through-hole silicon via (TSV) in the semiconductor industry has remained a critical challenge as its critical dimension (CD) reduces. In this letter, we report a novel method for TSV geometric feature measurement and characterization. By illuminating a collimated infrared laser beam to the TSV and then analyzing the TSV edge-induced diffraction interferometric fringe patterns, multiple geometric information of the TSV could be characterized, establishing its database. This computational approach to TSV characterization was validated by experiments. Being non-destructive and easy to deploy, this method provides a low cost and high efficiency solution for TSV metrology.</div></div>","PeriodicalId":23439,"journal":{"name":"Ultramicroscopy","volume":"272 ","pages":"Article 114136"},"PeriodicalIF":2.0000,"publicationDate":"2025-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Ultramicroscopy","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S030439912500035X","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MICROSCOPY","Score":null,"Total":0}
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Abstract

The precision metrology of through-hole silicon via (TSV) in the semiconductor industry has remained a critical challenge as its critical dimension (CD) reduces. In this letter, we report a novel method for TSV geometric feature measurement and characterization. By illuminating a collimated infrared laser beam to the TSV and then analyzing the TSV edge-induced diffraction interferometric fringe patterns, multiple geometric information of the TSV could be characterized, establishing its database. This computational approach to TSV characterization was validated by experiments. Being non-destructive and easy to deploy, this method provides a low cost and high efficiency solution for TSV metrology.
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基于衍射条纹分析的硅通孔表征新方法
随着通孔硅通孔临界尺寸(CD)的减小,其精密测量一直是半导体行业面临的一个严峻挑战。在这封信中,我们报告了一种新的TSV几何特征测量和表征方法。通过将准直红外激光束照射到TSV上,分析TSV边缘诱导衍射干涉条纹图,可以表征TSV的多种几何信息,并建立TSV数据库。实验验证了这种计算方法对TSV特性的影响。该方法具有非破坏性和易于部署的特点,为TSV测量提供了低成本、高效率的解决方案。
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来源期刊
Ultramicroscopy
Ultramicroscopy 工程技术-显微镜技术
CiteScore
4.60
自引率
13.60%
发文量
117
审稿时长
5.3 months
期刊介绍: Ultramicroscopy is an established journal that provides a forum for the publication of original research papers, invited reviews and rapid communications. The scope of Ultramicroscopy is to describe advances in instrumentation, methods and theory related to all modes of microscopical imaging, diffraction and spectroscopy in the life and physical sciences.
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