Orthorhombic ITO epitaxially stabilized on a perovskite oxide substrate

IF 3.6 2区物理与天体物理 Q2 PHYSICS, APPLIED Applied Physics Letters Pub Date : 2025-04-07 DOI:10.1063/5.0256689

Hiroyuki Yamada, Yoshikiyo Toyosaki, Akihito Sawa

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Abstract

Doped indium oxides, such as indium tin oxide (ITO), have been used as transparent conducting materials and have recently attracted increasing interest as thin-film channel materials for high-performance field-effect transistors. In numerous studies on crystalline ITO, stable bixbyite-type (cubic) and metastable corundum-type (rhombohedral) phases have been investigated. Here, we demonstrate an epitaxial stabilization of the ITO polytype having Rh2O3-II-type (space group: Pbna) orthorhombic structure using an orthorhombic perovskite oxide (110) DyScO3 (DSO) substrate. Distorted-orthorhombic ITO (o-ITO) films could be epitaxially grown at substrate temperatures of approximately 350 °C. The epitaxial relationships were determined to be ITO[100]//DSO[100] and ITO[001]//DSO[001], whereas the [010] of ITO was slightly inclined relative to that of DSO because of the strain effect. The transport properties of a distorted o-ITO film were better than those of a bixbyite-type ITO film grown on yttria-stabilized zirconia substrate, indicating that o-ITO has a potential of high-performance oxide semiconductor contributing to future electronics.

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在过氧化物基底上外延稳定的正交列构 ITO

掺杂的氧化铟，如氧化铟锡（ITO），已被用作透明导电材料，近年来作为高性能场效应晶体管的薄膜沟道材料引起了越来越多的兴趣。在许多关于ITO晶体的研究中，研究了稳定的bixbyite型（立方）和亚稳刚玉型（菱形）相。在这里，我们证明了使用正交钙钛矿氧化物（110）DyScO3 （DSO）衬底具有rh2o3 - ii型（空间群：Pbna）正交结构的ITO多型的外延稳定性。扭曲正交ITO （o-ITO）薄膜可以在大约350°C的衬底温度下外延生长。外延关系确定为ITO[100]//DSO[100]和ITO[001]//DSO[001]，而ITO的[010]由于应变效应相对于DSO略有倾斜。扭曲o-ITO薄膜的输运性能优于生长在氧化钇稳定氧化锆衬底上的bixbyite型ITO薄膜，这表明o-ITO具有高性能氧化物半导体的潜力，有助于未来电子产品的发展。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Applied Physics Letters 物理-物理：应用

CiteScore

6.40

自引率

10.00%

发文量

1821

审稿时长

1.6 months

期刊介绍： Applied Physics Letters (APL) features concise, up-to-date reports on significant new findings in applied physics. Emphasizing rapid dissemination of key data and new physical insights, APL offers prompt publication of new experimental and theoretical papers reporting applications of physics phenomena to all branches of science, engineering, and modern technology. In addition to regular articles, the journal also publishes invited Fast Track, Perspectives, and in-depth Editorials which report on cutting-edge areas in applied physics. APL Perspectives are forward-looking invited letters which highlight recent developments or discoveries. Emphasis is placed on very recent developments, potentially disruptive technologies, open questions and possible solutions. They also include a mini-roadmap detailing where the community should direct efforts in order for the phenomena to be viable for application and the challenges associated with meeting that performance threshold. Perspectives are characterized by personal viewpoints and opinions of recognized experts in the field. Fast Track articles are invited original research articles that report results that are particularly novel and important or provide a significant advancement in an emerging field. Because of the urgency and scientific importance of the work, the peer review process is accelerated. If, during the review process, it becomes apparent that the paper does not meet the Fast Track criterion, it is returned to a normal track.