Band Analysis of Acoustic Delay Lines Based on Single-Phase Unidirectional Transducers

IF 3.1 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Microelectromechanical Systems Pub Date : 2025-02-26 DOI:10.1109/JMEMS.2025.3528522
Yang Li;Jiawei Li;Tao Wu
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Abstract

This work presents a comprehensive band analysis for calculating the S21 and bandwidth (BW) of acoustic delay lines (ADLs) based on single-phase unidirectional transducers (SPUDTs). Focusing on the electrode layout, the amplitude and phase relationships of the incident fundamental symmetric (S0) Lamb wave and reflected waves at electrode centers (ECs) of Double SPUDT and Bottom Floating (BF) SPUDT unit cells across different frequencies are first investigated. Subsequently, ADLs are conceptualized as a model consisting of unit cells with transduction centers (TCs) and reflection centers (RCs) on each port, with an intermediate gap that introduces propagation loss (PL). Utilizing 1- $\mu $ m-thick aluminum nitride (AlN) and scandium-doped aluminum nitride (Al0.7Sc0.3N) thin films, theoretical modeling and finite element method (FEM) assisted calculations are conducted to compute the reflection ( $\Gamma $ ) and transmission (T) coefficients for both Double SPUDT and BF SPUDT unit cells. The S21 and 5-dB BW in the center frequency ( ${f} _{c}$ ) vicinity of the ADLs, with cell count (N) ranging from 3 to 13 and gap length ( $L_{g}$ ) ranging from 50 to $300~\mu $ m, are theoretically computed. The comparison with time-gated measurements demonstrates that the calculation errors are consistently below 5 dB $\cdot $ MHz. This analysis provides theoretical insight into the relationships among the ADL’s spectrum, PL, N, SPUDT structure, and piezoelectric film, offering valuable guidance for ADL performance optimization. [2024-0197]
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基于单相单向换能器的声延迟线频带分析
本文提出了一种基于单相单向换能器(SPUDTs)的声延迟线(adl)的S21和带宽(BW)的综合频带分析方法。以电极布局为重点,首先研究了不同频率下双SPUDT和底浮SPUDT单元格电极中心入射基对称(S0) Lamb波和反射波的振幅和相位关系。随后,adl被概念化为一个由每个端口上具有转导中心(tc)和反射中心(rc)的单元细胞组成的模型,中间有一个引入传播损耗(PL)的间隙。利用1- $\mu $ m厚的氮化铝(AlN)和掺钪的氮化铝(Al0.7Sc0.3N)薄膜,通过理论建模和有限元法辅助计算,计算了Double SPUDT和BF SPUDT单元电池的反射系数$\Gamma $和透射系数T。理论上计算了adl附近中心频率(${f} _{c}$),当细胞数(N)为3 ~ 13,间隙长度($L_{g}$)为50 ~ $300~\mu $ m时的S21和5-dB BW。与时间门控测量的比较表明,计算误差始终低于5 dB $\cdot $ MHz。该分析为ADL的光谱、PL、N、SPUDT结构和压电薄膜之间的关系提供了理论见解,为ADL的性能优化提供了有价值的指导。[2024-0197]
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来源期刊
Journal of Microelectromechanical Systems
Journal of Microelectromechanical Systems 工程技术-工程:电子与电气
CiteScore
6.20
自引率
7.40%
发文量
115
审稿时长
7.5 months
期刊介绍: The topics of interest include, but are not limited to: devices ranging in size from microns to millimeters, IC-compatible fabrication techniques, other fabrication techniques, measurement of micro phenomena, theoretical results, new materials and designs, micro actuators, micro robots, micro batteries, bearings, wear, reliability, electrical interconnections, micro telemanipulation, and standards appropriate to MEMS. Application examples and application oriented devices in fluidics, optics, bio-medical engineering, etc., are also of central interest.
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