Design of Compact Bidirectional Amplifier Utilizing Transformers-Stacking Technique

IF 4.5 1区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE Transactions on Microwave Theory and Techniques Pub Date : 2024-12-11 DOI:10.1109/TMTT.2024.3506735
Jian Zhang;Ming Zhai;Dawei Wang;Yichen Liu;Xiangjie Yi;Ruitao Wang;Wei Zhu;Yan Wang
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Abstract

Extremely high cost and form factors have become the most important reason limiting the promotion of large-scale phased-array systems for fifth-generation communication and K-/Ka-band satellite communication (SATCOM). This article presents a novel topology of ultracompact bidirectional amplifiers utilizing transformers-stacking techniques for low-cost large-scale phased arrays. In contrast to conventional bidirectional amplifier structures, this article proposes a more scalable bidirectional topology, which utilizes a magnetic self-canceling technique to stack the low-noise amplifier (LNA) into the power amplifier (PA) completely, realizing the function of the bidirectional amplifier with negligible performance penalty. In order to verify the proposed technique, the first bidirectional amplifier whose LNA mode and PA mode can work in different bands is implemented in a 45-nm CMOS SOI process for the K-/Ka-band SATCOM system. This design achieves 18.3-dBm peak saturated output power ( $P_{\text {sat}}$ ) and 15.9-dBm peak 1-dB compression output power ( $\rm {OP}_{1\,\text {dB}}$ ) in the Ka-band PA mode while maintaining a minimum noise figure (NF) of 2.46 dB in the K-band LNA mode. Furthermore, a notch filter is integrated into the three-winding transformer-based transmit/receive switches (TRSWs) to suppress the sidelobe of TX and avoid performance deterioration of the RX. Benefiting from the integration of a build-in-self notch filter, the proposed design has good gain suppression (>45 dB) to block the interferer from other TX chips in the LNA mode. The core size of this proposed design is only 0.14 mm2, which is only 20%–50% of the size occupied in conventional works.
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利用变压器叠加技术设计紧凑型双向放大器
极高的成本和外形因素已经成为限制第五代通信和K / ka波段卫星通信(SATCOM)大规模相控阵系统推广的最重要原因。本文提出了一种利用变压器堆叠技术实现低成本大规模相控阵的新型超紧凑双向放大器拓扑结构。与传统的双向放大器结构相比,本文提出了一种更具可扩展性的双向拓扑结构,该拓扑利用磁自抵消技术将低噪声放大器(LNA)完全堆叠到功率放大器(PA)中,实现了双向放大器的功能,而性能损失可以忽略不计。为了验证所提出的技术,在K / ka波段卫星通信系统中,采用45 nm CMOS SOI工艺实现了首个LNA模式和PA模式可以在不同频段工作的双向放大器。本设计在ka波段PA模式下实现18.3 dbm峰值饱和输出功率($P_{\text {sat}}$)和15.9 dbm峰值1-dB压缩输出功率($\rm {OP}_{1\,\text {dB}}$),同时在k波段LNA模式下保持2.46 dB的最小噪声系数(NF)。此外,在基于三绕组变压器的收发开关(trsw)中集成了陷波滤波器,以抑制TX的副瓣,避免RX的性能下降。得益于内置陷波滤波器的集成,所提出的设计具有良好的增益抑制(>45 dB),可以在LNA模式下阻挡来自其他TX芯片的干扰。本次设计的核心尺寸仅为0.14 mm2,仅为常规工程的20%-50%。
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来源期刊
IEEE Transactions on Microwave Theory and Techniques
IEEE Transactions on Microwave Theory and Techniques 工程技术-工程:电子与电气
CiteScore
8.60
自引率
18.60%
发文量
486
审稿时长
6 months
期刊介绍: The IEEE Transactions on Microwave Theory and Techniques focuses on that part of engineering and theory associated with microwave/millimeter-wave components, devices, circuits, and systems involving the generation, modulation, demodulation, control, transmission, and detection of microwave signals. This includes scientific, technical, and industrial, activities. Microwave theory and techniques relates to electromagnetic waves usually in the frequency region between a few MHz and a THz; other spectral regions and wave types are included within the scope of the Society whenever basic microwave theory and techniques can yield useful results. Generally, this occurs in the theory of wave propagation in structures with dimensions comparable to a wavelength, and in the related techniques for analysis and design.
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