Buried Interface Regulation with a Supramolecular Assembled Template Enables High-Performance Perovskite Solar Cells for Minimizing the VOC Deficit

IF 26.8 1区 材料科学 Q1 CHEMISTRY, MULTIDISCIPLINARY Advanced Materials Pub Date : 2025-04-09 DOI:10.1002/adma.202418011
Zhenrong Wang, Qiong Liang, Mingliang Li, Guohao Sun, Shiang Li, Tao Zhu, Yu Han, Hao Xia, Zhiwei Ren, Bingcheng Yu, Jiyao Zhang, Ruijie Ma, Hrisheekesh Thachoth Chandran, Lei Cheng, Liren Zhang, Dongyang Li, Shuyan Chen, Xinhui Lu, Chang Yan, Randi Azmi, Kuan Liu, Jinyao Tang, Gang Li
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Abstract

Despite the rapid development of perovskite solar cells (PSCs) in the past decade, the open-circuit voltage (VOC) of PSCs still lags behind the theoretical Shockley–Queisser limit. Energy-level mismatch and unwanted nonradiative recombination at key interfaces are the main factors detrimental to VOC. Herein, a perovskite crystallization-driven template is constructed at the SnO2/perovskite buried interface through a self-assembled amphiphilic phosphonate derivative. The highly oriented supramolecular template grows from an evolutionary selection growth via solid–solid phase transition. This strategy induces perovskite crystallization into a highly preferred (100) orientation toward out-of-plane direction and facilitated carrier extraction and transfer due to the elimination of energy barrier. This self-assembly process positively passivates the intrinsic surface defects at the SnO2/perovskite interface through the functionalized moieties, a marked contrast to the passive effect achieved via incidental contacts in conventional passivation methods. As a result, PSCs with buried interface modification exhibit a promising PCE of 25.34%, with a maximum VOC of 1.23 V, corresponding to a mere 0.306 V deficit (for perovskite bandgap of 1.536 eV), reaching 97.2% of the theoretical VOC limit. This strategy spontaneously improves the long-term operational stability of PSCs under thermal and moisture stress (ISOS-L-3: MPP, 65 °C, 50% RH, T92 lifetime exceeding 1200 h).

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埋藏界面调节与超分子组装模板使高性能钙钛矿太阳能电池最大限度地减少VOC赤字
尽管近十年来钙钛矿太阳能电池(PSCs)发展迅速,但PSCs的开路电压(VOC)仍然落后于理论的Shockley-Queisser极限。关键界面的能级失配和不必要的非辐射复合是VOC的主要危害因素。本文通过自组装的两亲性膦酸盐衍生物在SnO2/钙钛矿埋藏界面构建了钙钛矿结晶驱动模板。高取向的超分子模板是通过固-固相变进化选择生长出来的。该策略诱导钙钛矿向面外方向高度优选(100)取向结晶,并且由于消除了能量势垒,促进了载流子的提取和转移。这种自组装工艺通过官能化基团积极钝化SnO2/钙钛矿界面上的固有表面缺陷,与传统钝化方法通过偶然接触获得的钝化效果形成鲜明对比。结果表明,埋藏界面改性后的PSCs的PCE为25.34%,最大VOC为1.23 V,对应的缺陷仅为0.306 V(钙钛矿带隙为1.536 eV),达到理论VOC限值的97.2%。该策略自发地提高了psc在热湿应力(iso - l -3: MPP, 65°C, 50% RH, T92寿命超过1200小时)下的长期运行稳定性。
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来源期刊
Advanced Materials
Advanced Materials 工程技术-材料科学:综合
CiteScore
43.00
自引率
4.10%
发文量
2182
审稿时长
2 months
期刊介绍: Advanced Materials, one of the world's most prestigious journals and the foundation of the Advanced portfolio, is the home of choice for best-in-class materials science for more than 30 years. Following this fast-growing and interdisciplinary field, we are considering and publishing the most important discoveries on any and all materials from materials scientists, chemists, physicists, engineers as well as health and life scientists and bringing you the latest results and trends in modern materials-related research every week.
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