Structural and optical analysis of amorphous CuGaSe2 nanostructured thin films for enhanced photosensing applications

Abstract

This study explores the optical absorption properties of amorphous CuGaSe₂ nanostructured thin films, fabricated using thermal evaporation under a 10⁻⁵ Torr vacuum to ensure high purity and uniformity. Aiming to enhance optoelectronic applications such as photo-sensing, these films underwent thorough characterization using spectrophotometric methods, including transmission and reflection measurements. The analysis of the absorption edge identified a direct band gap of 1.96 eV, highlighting the material’s potential for optoelectronic applications. Furthermore, dispersion and oscillator energies were found to be 12.56 eV and 2.32 eV, respectively, providing a comprehensive understanding of the optical properties and light interaction behavior. Key performance indicators, including photoconductivity sensitivity, short-circuit current (1.62 × 10⁻³ A), open-circuit voltage (0.67 V), fill factor (0.64), and efficiency (7.2 %), demonstrate the suitability of these films for future use in optoelectronic devices. These findings offer valuable insights for optimizing photoresponsive materials in advanced optoelectronic technologies.