L. Ma , H. Zhao , F. Zheng , X.M. Wang , N. Tian , C.Y. You
{"title":"Influence of Fermi level and impurity scattering on anomalous Hall effect in L10 FeNiPt alloy films","authors":"L. Ma , H. Zhao , F. Zheng , X.M. Wang , N. Tian , C.Y. You","doi":"10.1016/j.apsusc.2025.163257","DOIUrl":null,"url":null,"abstract":"<div><div>L1<sub>0</sub> (Fe<em><sub>x</sub></em>Ni<sub>1-</sub><em><sub>x</sub></em>)<sub>0.5</sub>Pt<sub>0.5</sub> ordered alloy films with a face-centered tetragonal (fct) structure were successfully fabricated via magnetron sputtering. The effects of Fermi level shifts and impurity scattering on the anomalous Hall effect in these films were studied with both experiments and first-principles calculations. Both residual resistivity and phonon scattering were found to contribute to skew scattering, with their contributions decreasing as Fe content increases. <em>Ab initio</em> calculations reveal that the position of the Fermi surface rises with increasing the Fe content <em>x</em> , leading to a transition of intrinsic scattering parameter <em>b</em> from negative to positive between <em>x</em> = 0.4 and <em>x</em> = 0.6. Moreover, larger spin-slip on the Fe-rich side significantly enhances the anomalous Hall resistivity. Our results reveal that intrinsic mechanisms dominate on the Fe-rich side, whereas skew scattering mechanisms prevail on the Ni-rich side. This study establishes a comprehensive correlation among band features, Fermi level positioning, and impurity scattering in this prototypical system.</div></div>","PeriodicalId":247,"journal":{"name":"Applied Surface Science","volume":"700 ","pages":"Article 163257"},"PeriodicalIF":6.9000,"publicationDate":"2025-08-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Applied Surface Science","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0169433225009717","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"2025/4/12 0:00:00","PubModel":"Epub","JCR":"Q2","JCRName":"CHEMISTRY, PHYSICAL","Score":null,"Total":0}
引用次数: 0
Abstract
L10 (FexNi1-x)0.5Pt0.5 ordered alloy films with a face-centered tetragonal (fct) structure were successfully fabricated via magnetron sputtering. The effects of Fermi level shifts and impurity scattering on the anomalous Hall effect in these films were studied with both experiments and first-principles calculations. Both residual resistivity and phonon scattering were found to contribute to skew scattering, with their contributions decreasing as Fe content increases. Ab initio calculations reveal that the position of the Fermi surface rises with increasing the Fe content x , leading to a transition of intrinsic scattering parameter b from negative to positive between x = 0.4 and x = 0.6. Moreover, larger spin-slip on the Fe-rich side significantly enhances the anomalous Hall resistivity. Our results reveal that intrinsic mechanisms dominate on the Fe-rich side, whereas skew scattering mechanisms prevail on the Ni-rich side. This study establishes a comprehensive correlation among band features, Fermi level positioning, and impurity scattering in this prototypical system.
通过磁控溅射法成功制造了具有面心四方(ct)结构的 L10 (FexNi1-x)0.5Pt0.5 有序合金薄膜。通过实验和第一原理计算,研究了费米级移动和杂质散射对这些薄膜中反常霍尔效应的影响。研究发现,残余电阻率和声子散射都会对偏斜散射产生影响,而随着铁含量的增加,它们的影响会逐渐减小。Ab initio 计算显示,费米面的位置随着铁含量 x 的增加而上升,导致本征散射参数 b 在 x = 0.4 和 x = 0.6 之间由负转正。此外,富铁侧较大的自旋滑移会显著增强反常霍尔电阻率。我们的研究结果表明,本征机制在富铁侧占主导地位,而倾斜散射机制则在富镍侧占主导地位。这项研究在这一原型系统中建立了带状特征、费米级定位和杂质散射之间的全面关联。
期刊介绍:
Applied Surface Science covers topics contributing to a better understanding of surfaces, interfaces, nanostructures and their applications. The journal is concerned with scientific research on the atomic and molecular level of material properties determined with specific surface analytical techniques and/or computational methods, as well as the processing of such structures.