Optimizing Pulse Conditions for Enhanced Memory Performance of Se-Based Selector-Only Memory

Abstract

In this study, we investigated the effect of pulse falling time (Tfall) on the electrical characteristics of SiGeAsSe-based selector-only memory (SOM) devices. Our experimental results demonstrate that increasing the $\mathrm { T_{fall}}$ leads to an increased threshold voltage (Vth) and reduced $\mathrm { V_{th}}$ drift in SiGeAsSe devices. The optimized devices exhibit a remarkable memory window (> 1 V) and significantly suppressed drift characteristics (~10 mV/dec.). Electrical measurements at high temperatures demonstrate that $\mathrm { T_{fall}}$ is one of the important factors in material relaxation, and these improvements are attributed to the intentionally induced reconfiguration of the chalcogenide film. Furthermore, our results reveal that a suitable $\mathrm { T_{fall}}$ can effectively mitigate the degradation of the memory window at high temperatures. These findings afford valuable insights into the role of material relaxation in SOM devices, potentially aiding the development of high-performance memory devices.