Optimization and integration of room temperature RF sputtered ICO as TCO layers in high-performance SHJ solar cells

IF 6.3 2区 材料科学 Q2 ENERGY & FUELS Solar Energy Materials and Solar Cells Pub Date : 2025-04-16 DOI:10.1016/j.solmat.2025.113637
Engin Özkol , Maria M.R. Magalhães , Yifeng Zhao , Liqi Cao , Paula Perez-Rodriguez , Katarina Kovačević , Paul Procel , Manuel João Mendes , Miro Zeman , Olindo Isabella
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Abstract

In this work, we optimize cerium-doped indium oxide – ICO – thin films with respect to sputtering parameters such as oxygen flow, deposition pressure, applied RF power. Optimized 35-nm-thick ICO layer demonstrated a mobility of 44.22 cm2/Vs, a carrier concentration of 1.65 × 1020/cm3, and a resistivity of 8.56 × 10−4 Ω cm. Application of such layers into front/back contact silicon heterojunction (FBC-SHJ) solar cells enhanced the short-circuit current density (JSC) by 0.67 when compared to SHJ cell endowed with tin-doped indium oxide (ITO), respectively. This enhancement yielded an absolute power conversion efficiency (PCE) improvement of 0.55 %, reaching efficiencies of around 23.6 % for devices with ICO layers.
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室温射频溅射 ICO 作为 TCO 层在高性能 SHJ 太阳能电池中的优化与集成
在这项工作中,我们优化了铈掺杂氧化铟- ICO -薄膜的溅射参数,如氧流量,沉积压力,应用射频功率。优化后的35 nm厚ICO层的迁移率为44.22 cm2/Vs,载流子浓度为1.65 × 1020/cm3,电阻率为8.56 × 10−4 Ω cm。前后接触硅异质结(FBC-SHJ)太阳能电池的短路电流密度(JSC)比掺锡氧化铟(ITO)的SHJ电池分别提高了0.67。这种增强使绝对功率转换效率(PCE)提高了0.55%,对于具有ICO层的设备,效率达到了23.6%左右。
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来源期刊
Solar Energy Materials and Solar Cells
Solar Energy Materials and Solar Cells 工程技术-材料科学:综合
CiteScore
12.60
自引率
11.60%
发文量
513
审稿时长
47 days
期刊介绍: Solar Energy Materials & Solar Cells is intended as a vehicle for the dissemination of research results on materials science and technology related to photovoltaic, photothermal and photoelectrochemical solar energy conversion. Materials science is taken in the broadest possible sense and encompasses physics, chemistry, optics, materials fabrication and analysis for all types of materials.
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