Near-infrared scintillation properties of Er-doped Ca3TaGa3Si2O14 single crystals grown by floating zone method

IF 4.2 3区 材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY Optical Materials Pub Date : 2025-07-01 Epub Date: 2025-04-15 DOI:10.1016/j.optmat.2025.117064
Ryosei Takahashi, Kai Okazaki, Daisuke Nakauchi, Takumi Kato, Noriaki Kawaguchi, Takayuki Yanagida
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Abstract

Er-doped Ca3TaGa3Si2O14 (Er:CTGS) single crystals doped with different Er concentrations (0.5, 1, 2, and 5 %) were grown by the optical floating zone method. Their luminescence and scintillation performances were investigated. The prepared samples showed emission peaks and decay time constants due to electronic transitions of Er3+ under both the visible light and X-ray irradiations. In the photoluminescence quantum yield measurements, the 0.5, 1, 2, and 5 % Er:CTGS samples respectively demonstrated 74.7, 78.0, 83.4, and 63.2 %. Good linear responses between X-ray exposure dose-rate and scintillation output were confirmed, and 2 % Er:CTGS showed the lower detection limit of 2.3 mGy/h.
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浮区法生长掺铒Ca3TaGa3Si2O14单晶的近红外闪烁特性
采用光学浮区法生长不同掺铒浓度(0.5、1、2、5%)的Ca3TaGa3Si2O14 (Er:CTGS)单晶。研究了它们的发光和闪烁性能。制备的样品在可见光和x射线照射下均表现出Er3+的电子跃迁引起的发射峰和衰变时间常数。在光致发光量子产率测量中,0.5、1、2和5%的Er:CTGS样品分别为74.7、78.0、83.4和63.2%。证实了x射线照射剂量率与闪烁输出之间有良好的线性响应,2% Er:CTGS的最低检测限为2.3 mGy/h。
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来源期刊
Optical Materials
Optical Materials 工程技术-材料科学:综合
CiteScore
6.60
自引率
12.80%
发文量
1265
审稿时长
38 days
期刊介绍: Optical Materials has an open access mirror journal Optical Materials: X, sharing the same aims and scope, editorial team, submission system and rigorous peer review. The purpose of Optical Materials is to provide a means of communication and technology transfer between researchers who are interested in materials for potential device applications. The journal publishes original papers and review articles on the design, synthesis, characterisation and applications of optical materials. OPTICAL MATERIALS focuses on: • Optical Properties of Material Systems; • The Materials Aspects of Optical Phenomena; • The Materials Aspects of Devices and Applications. Authors can submit separate research elements describing their data to Data in Brief and methods to Methods X.
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