Robust Memcapacitive Synapse Array for Energy-Efficient Motion Detection

IF 16 1区 材料科学 Q1 CHEMISTRY, MULTIDISCIPLINARY ACS Nano Pub Date : 2025-04-19 DOI:10.1021/acsnano.5c02340
Jiazheng Chen, Arijit Sarkar, Md Sazzadur Rahman, Victoria Ravel, Aaron D. Franklin, Tania Roy
{"title":"Robust Memcapacitive Synapse Array for Energy-Efficient Motion Detection","authors":"Jiazheng Chen, Arijit Sarkar, Md Sazzadur Rahman, Victoria Ravel, Aaron D. Franklin, Tania Roy","doi":"10.1021/acsnano.5c02340","DOIUrl":null,"url":null,"abstract":"Emerging neuromorphic systems offer a promising alternative for memory and sensing compared to traditional configurations, but face challenges with scalability and energy efficiency. Capacitive memories show great potential for addressing energy concerns due to their leakage-free nature. However, there is a lack of research on their scalability and robustness. In this work, we present a high-yield memcapacitor array that demonstrates reliable memory characteristics while also being capable of precisely sensing different types of vehicle motion with only a few picowatts of power consumption. Featuring a metal-oxide-semiconductor (MOS) structure with the most aggressively scaled dimensions compared to previously reported memcapacitors, we successfully established a 9 × 9 memcapacitor matrix with a yield of over 92.5%. The device exhibits tunable synaptic plasticity under varying pulsing schemes. We also demonstrate 64 distinct capacitance states and stable performance over 2 × 10<sup>4</sup> electrical pulses. Additionally, we showcase its application in motion sensing for autonomous vehicles, leveraging the short-term potentiation properties of the device. This approach offers a scalable, energy-efficient solution for future motion sensing systems.","PeriodicalId":21,"journal":{"name":"ACS Nano","volume":"108 1","pages":""},"PeriodicalIF":16.0000,"publicationDate":"2025-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ACS Nano","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1021/acsnano.5c02340","RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"CHEMISTRY, MULTIDISCIPLINARY","Score":null,"Total":0}
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Abstract

Emerging neuromorphic systems offer a promising alternative for memory and sensing compared to traditional configurations, but face challenges with scalability and energy efficiency. Capacitive memories show great potential for addressing energy concerns due to their leakage-free nature. However, there is a lack of research on their scalability and robustness. In this work, we present a high-yield memcapacitor array that demonstrates reliable memory characteristics while also being capable of precisely sensing different types of vehicle motion with only a few picowatts of power consumption. Featuring a metal-oxide-semiconductor (MOS) structure with the most aggressively scaled dimensions compared to previously reported memcapacitors, we successfully established a 9 × 9 memcapacitor matrix with a yield of over 92.5%. The device exhibits tunable synaptic plasticity under varying pulsing schemes. We also demonstrate 64 distinct capacitance states and stable performance over 2 × 104 electrical pulses. Additionally, we showcase its application in motion sensing for autonomous vehicles, leveraging the short-term potentiation properties of the device. This approach offers a scalable, energy-efficient solution for future motion sensing systems.

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用于节能运动检测的鲁棒记忆电容突触阵列
与传统配置相比,新兴的神经形态系统为记忆和传感提供了一种有前途的替代方案,但面临着可扩展性和能效方面的挑战。电容存储器由于其无泄漏的特性,在解决能源问题方面显示出巨大的潜力。然而,对其可扩展性和鲁棒性的研究却很少。在这项工作中,我们提出了一种高产量的memcapacitor阵列,它展示了可靠的存储特性,同时也能够精确地感知不同类型的车辆运动,而功耗仅为几皮瓦。采用金属氧化物半导体(MOS)结构,与先前报道的memcapacitors相比,具有最积极的缩放尺寸,我们成功地建立了9 × 9 memcapacitors矩阵,产率超过92.5%。该装置在不同的脉冲方案下表现出可调节的突触可塑性。我们还证明了64种不同的电容状态和在2 × 104电脉冲下的稳定性能。此外,我们还展示了其在自动驾驶汽车运动传感中的应用,利用该设备的短期增强特性。这种方法为未来的运动传感系统提供了一种可扩展的节能解决方案。
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来源期刊
ACS Nano
ACS Nano 工程技术-材料科学:综合
CiteScore
26.00
自引率
4.10%
发文量
1627
审稿时长
1.7 months
期刊介绍: ACS Nano, published monthly, serves as an international forum for comprehensive articles on nanoscience and nanotechnology research at the intersections of chemistry, biology, materials science, physics, and engineering. The journal fosters communication among scientists in these communities, facilitating collaboration, new research opportunities, and advancements through discoveries. ACS Nano covers synthesis, assembly, characterization, theory, and simulation of nanostructures, nanobiotechnology, nanofabrication, methods and tools for nanoscience and nanotechnology, and self- and directed-assembly. Alongside original research articles, it offers thorough reviews, perspectives on cutting-edge research, and discussions envisioning the future of nanoscience and nanotechnology.
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