{"title":"Stacked crystalline nanomembrane GaAs/Si tunnel diodes on polypropylene substrates derived from disposable masks","authors":"Changhyun (Lyon) Nam , Kwangeun Kim","doi":"10.1016/j.matlet.2025.138604","DOIUrl":null,"url":null,"abstract":"<div><div>GaAs/Si tunnel diodes (TDs) were achieved on recycled polypropylene (PP) substrates through crystalline nanomembrane (NM) stacking. Crystalline NM-based GaAs/Si TDs were constructed on the UV/O<sub>3</sub>-treated PP substrate by the combination of NM and TD stacking. Conduction regions of band-to-band tunneling, negative differential resistance, and thermionic emission were revealed by electrical characterization of the GaAs/Si/PP TDs. The peak-to-valley current ratios of GaAs/Si/PP TDs (2.15, 1.92, and 2.03) were determined to be comparable to those of conventional epitaxial and direct-bonded TDs. These findings demonstrated the sustainable capability of recycled PP substrates in the development of crystalline NM-based tunneling devices.</div></div>","PeriodicalId":384,"journal":{"name":"Materials Letters","volume":"393 ","pages":"Article 138604"},"PeriodicalIF":2.7000,"publicationDate":"2025-04-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials Letters","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0167577X25006330","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
Abstract
GaAs/Si tunnel diodes (TDs) were achieved on recycled polypropylene (PP) substrates through crystalline nanomembrane (NM) stacking. Crystalline NM-based GaAs/Si TDs were constructed on the UV/O3-treated PP substrate by the combination of NM and TD stacking. Conduction regions of band-to-band tunneling, negative differential resistance, and thermionic emission were revealed by electrical characterization of the GaAs/Si/PP TDs. The peak-to-valley current ratios of GaAs/Si/PP TDs (2.15, 1.92, and 2.03) were determined to be comparable to those of conventional epitaxial and direct-bonded TDs. These findings demonstrated the sustainable capability of recycled PP substrates in the development of crystalline NM-based tunneling devices.
期刊介绍：
Materials Letters has an open access mirror journal Materials Letters: X, sharing the same aims and scope, editorial team, submission system and rigorous peer review.
Materials Letters is dedicated to publishing novel, cutting edge reports of broad interest to the materials community. The journal provides a forum for materials scientists and engineers, physicists, and chemists to rapidly communicate on the most important topics in the field of materials.
Contributions include, but are not limited to, a variety of topics such as:
• Materials - Metals and alloys, amorphous solids, ceramics, composites, polymers, semiconductors
• Applications - Structural, opto-electronic, magnetic, medical, MEMS, sensors, smart
• Characterization - Analytical, microscopy, scanning probes, nanoscopic, optical, electrical, magnetic, acoustic, spectroscopic, diffraction
• Novel Materials - Micro and nanostructures (nanowires, nanotubes, nanoparticles), nanocomposites, thin films, superlattices, quantum dots.
• Processing - Crystal growth, thin film processing, sol-gel processing, mechanical processing, assembly, nanocrystalline processing.
• Properties - Mechanical, magnetic, optical, electrical, ferroelectric, thermal, interfacial, transport, thermodynamic
• Synthesis - Quenching, solid state, solidification, solution synthesis, vapor deposition, high pressure, explosive
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