Tunable Bipolar Photothermoelectric Response from Mott Activation for In-Sensor Image Preprocessing

Abstract

In-sensor image preprocessing, a subset of edge computing, offers a solution to mitigate frequent analog-digital conversions and the von Neumann bottleneck in conventional digital hardware. However, an efficient in-sensor device array with large-scale integration capability for high-density and low-power sensory processing is still lacking and highly desirable. This work introduces an adjustable broadband photothermoelectric detector based on a phase-change vanadium dioxide thin-film transistor. This transistor employs a vanadium dioxide/gallium nitride three-terminal structure with a gate-tunable phase transition at the gate-source junctions. This design allows for modulable photothermoelectric responsivities and alteration of the short-circuit photocurrent's polarities. The devices exhibit linear gate dependence for the broadband photoresponse and linear light-intensity dependence for both positive and negative photoresponsivities. The device's energy consumption is as low as 8 pJ per spike, which is one order of magnitude lower than that of previous Mott materials-based in-sensor preprocessing devices. A wafer-scale bipolar phototransistor array has also been fabricated by standard micro-/nano-fabrication techniques, exhibiting excellent stability and endurance (over 5000 cycles). More importantly, an integrated in-sensor convolutional network is successfully designed for simultaneous broadband image classification, medical image denoising, and retinal vessel segmentation, delivering exceptional performance and paving the way for future smart edge sensors.