Ultrafast charge carrier and exciton dynamics in an excitonic insulator probed by time-resolved photoemission spectroscopy

IF 8.7 2区 工程技术 Q1 CHEMISTRY, PHYSICAL Progress in Surface Science Pub Date : 2022-12-01 DOI:10.1016/j.progsurf.2022.100679
Selene Mor , Marc Herzog , Claude Monney , Julia Stähler
{"title":"Ultrafast charge carrier and exciton dynamics in an excitonic insulator probed by time-resolved photoemission spectroscopy","authors":"Selene Mor ,&nbsp;Marc Herzog ,&nbsp;Claude Monney ,&nbsp;Julia Stähler","doi":"10.1016/j.progsurf.2022.100679","DOIUrl":null,"url":null,"abstract":"<div><p>An excitonic insulator phase is expected to arise from the spontaneous formation of electron–hole pairs (excitons) in semiconductors where the exciton binding energy exceeds the size of the electronic band gap. At low temperature, these ground state excitons stabilize a new phase by condensing at lower energy than the electrons at the valence band top, thereby widening the electronic band gap. The envisioned opportunity to explore many-boson phenomena in an excitonic insulator system is triggering a very active debate on how ground state excitons can be experimentally evidenced. Here, we employ a nonequilibrium approach to spectrally disentangle the photoinduced dynamics of an exciton condensate from the entwined signature of the valence band electrons. By means of time- and angle-resolved photoemission spectroscopy of the occupied and unoccupied electronic states, we follow the complementary dynamics of conduction and valence band electrons in the photoexcited low-temperature phase of Ta<sub>2</sub>NiSe<sub>5</sub>, the hitherto most promising single-crystal candidate to undergo a semiconductor-to-excitonic-insulator phase transition. The photoexcited conduction electrons are found to relax within less than 1 ps. Their relaxation time is inversely proportional to their excess energy, a dependence that we attribute to the reduced screening of Coulomb interaction and the low dimensionality of Ta<sub>2</sub>NiSe<sub>5</sub>. Long after (<span><math><mrow><mo>&gt;</mo></mrow></math></span> 10 ps) the conduction band has emptied, the photoemission intensity below the Fermi energy has not fully recovered the equilibrium value. Notably, this seeming carrier imbalance cannot be rationalized simply by the relaxation of photoexcited electrons and holes across the semiconductor band gap. Rather, a rate equation model involving different photoemission crosssections of the valence electrons and the condensed excitons is able to reproduce the delayed recovery of the photoemission intensity below the Fermi energy. The model shows that electron quantum tunnelling between the exciton condensate and the valence band top is enabled by an extremely small activation energy of <span><math><mrow><mn>4</mn><mo>×</mo><msup><mrow><mn>10</mn></mrow><mrow><mo>-</mo><mn>6</mn></mrow></msup></mrow></math></span> eV and explains the retarded recovery of the exciton condensate. Our findings not only determine the energy gain of ground state exciton formation with exceptional energy resolution, but also demonstrate the use of time-resolved photoemission to unveil the re-formation dynamics of an exciton condensate with femtosecond time resolution.</p></div>","PeriodicalId":416,"journal":{"name":"Progress in Surface Science","volume":"97 4","pages":"Article 100679"},"PeriodicalIF":8.7000,"publicationDate":"2022-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Progress in Surface Science","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0079681622000272","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"CHEMISTRY, PHYSICAL","Score":null,"Total":0}
引用次数: 4

Abstract

An excitonic insulator phase is expected to arise from the spontaneous formation of electron–hole pairs (excitons) in semiconductors where the exciton binding energy exceeds the size of the electronic band gap. At low temperature, these ground state excitons stabilize a new phase by condensing at lower energy than the electrons at the valence band top, thereby widening the electronic band gap. The envisioned opportunity to explore many-boson phenomena in an excitonic insulator system is triggering a very active debate on how ground state excitons can be experimentally evidenced. Here, we employ a nonequilibrium approach to spectrally disentangle the photoinduced dynamics of an exciton condensate from the entwined signature of the valence band electrons. By means of time- and angle-resolved photoemission spectroscopy of the occupied and unoccupied electronic states, we follow the complementary dynamics of conduction and valence band electrons in the photoexcited low-temperature phase of Ta2NiSe5, the hitherto most promising single-crystal candidate to undergo a semiconductor-to-excitonic-insulator phase transition. The photoexcited conduction electrons are found to relax within less than 1 ps. Their relaxation time is inversely proportional to their excess energy, a dependence that we attribute to the reduced screening of Coulomb interaction and the low dimensionality of Ta2NiSe5. Long after (> 10 ps) the conduction band has emptied, the photoemission intensity below the Fermi energy has not fully recovered the equilibrium value. Notably, this seeming carrier imbalance cannot be rationalized simply by the relaxation of photoexcited electrons and holes across the semiconductor band gap. Rather, a rate equation model involving different photoemission crosssections of the valence electrons and the condensed excitons is able to reproduce the delayed recovery of the photoemission intensity below the Fermi energy. The model shows that electron quantum tunnelling between the exciton condensate and the valence band top is enabled by an extremely small activation energy of 4×10-6 eV and explains the retarded recovery of the exciton condensate. Our findings not only determine the energy gain of ground state exciton formation with exceptional energy resolution, but also demonstrate the use of time-resolved photoemission to unveil the re-formation dynamics of an exciton condensate with femtosecond time resolution.

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用时间分辨光谱学探测激子绝缘体中的超快载流子和激子动力学
在半导体中,当激子的结合能超过电子带隙的大小时,激子绝缘体相预计会自发形成电子空穴对(激子)。在低温下,这些基态激子通过在价带顶部以比电子更低的能量凝结来稳定一个新相位,从而扩大电子带隙。在激子绝缘体系统中探索多玻色子现象的设想机会引发了一场关于如何通过实验证明基态激子的非常活跃的辩论。在这里,我们采用了一种非平衡方法,从价带电子的纠缠特征中光谱地解开了激子凝聚的光致动力学。通过时间和角度分辨的占据电子态和未占据电子态的光发射光谱,我们跟踪了Ta2NiSe5的光激发低温相中的传导电子和价带电子的互补动力学,Ta2NiSe5是迄今为止最有希望经历半导体到激子绝缘体相变的单晶候选人。发现光激发的传导电子在小于1ps的范围内松弛。它们的松弛时间与它们的多余能量成反比,我们将这种依赖归因于库仑相互作用的减少筛选和Ta2NiSe5的低维数。(>10 ps)导带已经空化,费米能以下的光电强度还没有完全恢复到平衡值。值得注意的是,这种表面上的载流子不平衡不能简单地通过半导体带隙中光激发电子和空穴的弛豫来解释。相反,涉及价电子和凝聚激子的不同光发射截面的速率方程模型能够再现低于费米能量的光发射强度的延迟恢复。模型表明,在极小的4×10-6 eV活化能下,激子凝聚体和价带顶部之间的电子量子隧穿得以实现,并解释了激子凝聚体恢复迟缓的原因。我们的发现不仅以特殊的能量分辨率确定了基态激子形成的能量增益,而且还展示了使用时间分辨光发射来揭示具有飞秒时间分辨率的激子凝聚的再形成动力学。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
Progress in Surface Science
Progress in Surface Science 工程技术-物理:凝聚态物理
CiteScore
11.30
自引率
0.00%
发文量
10
审稿时长
3 months
期刊介绍: Progress in Surface Science publishes progress reports and review articles by invited authors of international stature. The papers are aimed at surface scientists and cover various aspects of surface science. Papers in the new section Progress Highlights, are more concise and general at the same time, and are aimed at all scientists. Because of the transdisciplinary nature of surface science, topics are chosen for their timeliness from across the wide spectrum of scientific and engineering subjects. The journal strives to promote the exchange of ideas between surface scientists in the various areas. Authors are encouraged to write articles that are of relevance and interest to both established surface scientists and newcomers in the field.
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