P. Daniel Dapkus , Chun Yung Chi , Sang Jun Choi , Hyung Joon Chu , Mitchell Dreiske , Rijuan Li , Yenting Lin , Yoshitake Nakajima , Dawei Ren , Ryan Stevenson , Maoqing Yao , Ting Wei Yeh , Hanmin Zhao
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引用次数: 5
Abstract
Selective area epitaxial (SAE) growth of III-V materials and devices by metalorganic chemical vapor deposition is selectively reviewed to illustrate the concepts employed in this technology and its most relevant applications. Special focus on the use of SAE use for photonic integration, heterogeneous integration of materials relevant to photonic integration, and nanostructure integration is made. Throughout, the pioneering work led by Professor James J. Coleman is used to illustrate the value of using selective growth for various applications.
期刊介绍：
Progress in Quantum Electronics, established in 1969, is an esteemed international review journal dedicated to sharing cutting-edge topics in quantum electronics and its applications. The journal disseminates papers covering theoretical and experimental aspects of contemporary research, including advances in physics, technology, and engineering relevant to quantum electronics. It also encourages interdisciplinary research, welcoming papers that contribute new knowledge in areas such as bio and nano-related work.
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