Progress in Quantum Electronics最新文献

III-nitride nanowire-based lasers for next-generation optoelectronic and display applications 用于下一代光电和显示应用的氮化纳米线激光器

IF 12.5 1区物理与天体物理 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC

Progress in Quantum Electronics

Pub Date : 2025-12-04 DOI: 10.1016/j.pquantelec.2025.100597

Sung-Un Kim, Min-Seok Lee, Jeong-Kyun Oh, Jong-Su Kim, Geon-Yeong Kim, In-Seo Na, Ha-Neul Eom, Yong-Ho Ra

III-nitride nanowires (NWs) have emerged as a versatile platform for nanoscale optoelectronics, combining unique attributes such as strain relaxation, defect tolerance, strong carrier confinement, and compatibility with silicon backplanes. Advances in epitaxial growth techniques, including molecular beam epitaxy (MBE), metal-organic chemical vapor deposition (MOCVD), and selective-area epitaxy (SAE), have enabled deterministic control over high-quality, compositionally flexible NW arrays. These breakthroughs have led to diverse device architectures, spanning Fabry-Pérot (FP) cavities, whispering gallery modes (WGM), plasmonic resonators, random cavities, and photonic crystal arrays, achieving low-threshold lasing, narrow linewidths, and spectral tunability. NW light-emitting diodes (LEDs) have further demonstrated polarization-free emission, geometry-driven color tuning, and monolithic full-color operation without phosphors, addressing long-standing challenges such as the “green gap” and scalable RGB integration. These structural and device-level advantages are now converging with the stringent requirements of next-generation AR/VR/XR micro-displays, which demand extreme luminance, sub-micron pixel pitches, narrow spectral linewidths, and directional emission for efficient coupling into waveguide optics. While conventional micro-LEDs face severe efficiency bottlenecks at deep submicron scales, NW lasers, particularly photonic-crystal and tunnel-junction surface-emitting designs, offer coherence, spectral purity, and engineered far-fields that are well aligned with immersive display engines. We further link these advances to system-level performance benchmarks, including luminance after optical combiners, spectral stability, power efficiency, and manufacturability. Finally, beyond displays, progress in tunnel junction integration and photonic-crystal NW surface-emitting lasers highlights the future application potential of this technology in on-chip photonic interconnects, quantum light sources, and emerging optical computing paradigms. By bridging nanoscale materials science with application-driven requirements, III-nitride NW lasers are positioned as a transformative platform for both optoelectronics and next-generation display technologies.

氮化纳米线（NWs）已成为纳米级光电子学的通用平台，具有应变松弛、缺陷容忍度、强载流子约束以及与硅背板的兼容性等独特属性。包括分子束外延（MBE）、金属有机化学气相沉积（MOCVD）和选择性面积外延（SAE）在内的外延生长技术的进步，使得对高质量、组成灵活的NW阵列的控制成为可能。这些突破带来了多种器件架构，包括fabry - p (FP)腔、低语通道模式（WGM）、等离子体谐振器、随机腔和光子晶体阵列，实现了低阈值激光、窄线宽和光谱可调性。NW发光二极管（led）进一步展示了无偏振发射、几何驱动的颜色调谐和无荧光粉的单片全彩操作，解决了诸如“绿色间隙”和可扩展RGB集成等长期存在的挑战。这些结构和器件级优势现在正与下一代AR/VR/XR微显示器的严格要求相融合，这些微显示器需要极高的亮度、亚微米像素间距、窄谱线宽度和定向发射，以便有效地耦合到波导光学器件中。传统的微型led在深亚微米尺度上面临着严重的效率瓶颈，而NW激光器，特别是光子晶体和隧道结表面发射设计，提供了相干性、光谱纯度，以及与沉浸式显示引擎很好地对齐的工程远场。我们进一步将这些进步与系统级性能基准联系起来，包括光学合成器后的亮度、光谱稳定性、功率效率和可制造性。最后，除了显示器，隧道结集成和光子晶体NW表面发射激光器的进展突出了该技术在片上光子互连，量子光源和新兴光学计算范例中的未来应用潜力。通过将纳米材料科学与应用驱动的需求相结合，iii -氮化物NW激光器被定位为光电子学和下一代显示技术的变革平台。

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引用次数: 0

Research progresses on epitaxy and sidewall treatment for micro-LEDs 微型led外延及边壁处理的研究进展

IF 12.5 1区物理与天体物理 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC

Progress in Quantum Electronics

Pub Date : 2025-11-01 DOI: 10.1016/j.pquantelec.2025.100598

Weijie Guo , Wenjie He , Zhengwen Qi , Jinfeng Zhang , Changdong Tong , Minhua Li , Jiansheng Zhong , Yijun Lu , Tingzhu Wu , Zhong Chen , Rong Zhang

Micro-LEDs have emerged as promising light sources for high-resolution displays, yet their commercialization faces persistent challenges in simultaneously achieving high efficiency, extended operational lifespan, and spectral stability. Recent advances in understanding carrier dynamics within micro-LEDs, including injection, transport, spatial distribution, radiative recombination, and nonradiative recombination, have fundamentally driven the development of advanced epitaxial growth, mesa-etching techniques, and sidewall treatment. In addition to the traditional InGaN-based blue/green and AlGaInP-based red micro-LEDs, InGaN-based red micro-LEDs have demonstrated notable advancement in luminous characteristics. This review presents the cutting-edge epitaxial strategies and innovative sidewall treatment methodologies, while providing an assessment of their impacts on the performance of micro-LEDs.

micro - led已成为高分辨率显示器的有前途的光源，但其商业化面临着同时实现高效率，延长使用寿命和光谱稳定性的持续挑战。在了解微型led的载流子动力学方面的最新进展，包括注入、输运、空间分布、辐射重组和非辐射重组，从根本上推动了先进外延生长、台面蚀刻技术和侧壁处理的发展。除了传统的基于ingan的蓝/绿微型led和基于algainp的红色微型led外，基于ingan的红色微型led在发光特性方面也有了显着的进步。本文介绍了尖端的外延策略和创新的侧壁处理方法，同时评估了它们对微型led性能的影响。

引用次数: 0

Magnetic field driven emergent phenomena: Insights from magneto-optics and nanoscopy 磁场驱动的涌现现象：来自磁光学和纳米显微镜的见解

IF 12.5 1区物理与天体物理 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC

Progress in Quantum Electronics

Pub Date : 2025-09-01 DOI: 10.1016/j.pquantelec.2025.100585

Zhenbing Dai , Bing Cheng , Ran Jing , Lukas Wehmeier , Zhurun Ji , D.N. Basov , Guangxin Ni , Mengkun Liu

This review explores magnetic field-driven emergent phenomena across various material systems, emphasizing the pivotal roles of magneto-optical and nanoscopy techniques. We examine fundamental aspects of Landau electrodynamics in both 2D and 3D systems, including quantum Hall and topological magnetoelectric effects in graphene and topological insulators. Particularly attention is given to magnetic excitations and magnetopolaritons, such as surface magnon polaritons, magnetoplasmons, and magnetoexcitons in novel quantum materials, including quantum magnets and hybrid heterostructures. Advanced imaging techniques, such as scattering-type scanning near-field optical microscopy (SNOM) and microwave impedance microscopy, are showcased for their capability to resolve these phenomena with microscopic and nanoscopic resolution. These insights are complemented by discussions of advanced experimental approaches, including cryogenic environments, ultrafast pump-probe techniques, and the integration of magnetic fields into near-field optical methodologies. We further investigate the potential of these imaging techniques for unraveling complex magnetic orders, quantum phases, and correlated electronic behaviors. Finally, we offer perspectives on future research directions and highlight emerging opportunities in the evolving field of optical magneto-nanoscopy.

本文探讨了不同材料系统中磁场驱动的涌现现象，强调了磁光和纳米技术的关键作用。我们研究了朗道电动力学在二维和三维系统中的基本方面，包括石墨烯和拓扑绝缘体中的量子霍尔和拓扑磁电效应。特别关注磁激发和磁极化子，如表面磁振子极化子、磁等离子体子和磁激子在新型量子材料，包括量子磁体和杂化异质结构。先进的成像技术，如散射型扫描近场光学显微镜（SNOM）和微波阻抗显微镜，展示了它们以微观和纳米分辨率解决这些现象的能力。这些见解是通过讨论先进的实验方法来补充的，包括低温环境，超快泵浦探针技术，以及将磁场集成到近场光学方法中。我们进一步研究了这些成像技术在揭示复杂磁序、量子相和相关电子行为方面的潜力。最后，我们展望了未来的研究方向，并强调了光磁纳米技术在不断发展的领域中出现的机会。

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引用次数: 0

Hybrid classical-quantum communication networks 混合经典量子通信网络

IF 12.5 1区物理与天体物理 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC

Progress in Quantum Electronics

Pub Date : 2025-09-01 DOI: 10.1016/j.pquantelec.2025.100586

Joseph M. Lukens , Nicholas A. Peters , Bing Qi

Over the past several decades, the proliferation of global classical communication networks has transformed various facets of human society. Concurrently, quantum networking has emerged as a dynamic field of research, driven by its potential applications in distributed quantum computing, quantum sensor networks, and secure communications. This prompts a fundamental question: rather than constructing quantum networks from scratch, can we harness the widely available classical fiber-optic infrastructure to establish hybrid quantum–classical networks? This paper aims to provide a comprehensive review of ongoing research endeavors aimed at integrating quantum communication protocols, such as quantum key distribution, into existing lightwave networks. This approach offers the substantial advantage of reducing implementation costs by allowing classical and quantum communication protocols to share optical fibers, communication hardware, and other network control resources—arguably the most pragmatic solution in the near term. In the long run, classical communication will also reap the rewards of innovative quantum communication technologies, such as quantum memories and repeaters. Accordingly, our vision for the future of the Internet is that of heterogeneous communication networks thoughtfully designed for the seamless support of both classical and quantum communications.

在过去的几十年里，全球经典通信网络的扩散已经改变了人类社会的各个方面。同时，由于量子网络在分布式量子计算、量子传感器网络和安全通信方面的潜在应用，量子网络已经成为一个充满活力的研究领域。这就提出了一个基本问题：我们能否利用广泛可用的经典光纤基础设施来建立量子-经典混合网络，而不是从零开始构建量子网络？本文旨在全面回顾正在进行的旨在将量子通信协议（如量子密钥分发）集成到现有光波网络中的研究工作。通过允许经典通信协议和量子通信协议共享光纤、通信硬件和其他网络控制资源，这种方法提供了降低实现成本的实质性优势——可以说是近期内最实用的解决方案。从长远来看，经典通信也将获得创新量子通信技术的回报，例如量子存储器和中继器。因此，我们对互联网未来的愿景是，为经典通信和量子通信的无缝支持而精心设计的异构通信网络。

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引用次数: 0

Synthesis and characterization of nanostructured topological materials 纳米结构拓扑材料的合成与表征

IF 12.5 1区物理与天体物理 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC

Progress in Quantum Electronics

Pub Date : 2025-09-01 DOI: 10.1016/j.pquantelec.2025.100588

Qinyuan Jiang , Arka Chatterjee , Shengxi Huang

As a branch of quantum materials, topological materials are noted for their topologically nontrivial band structures, massless Dirac or Weyl fermions, strong spin-orbit coupling, and boundary-protected states, endowed with exotic physical properties totally different from those of conventional insulators and metals. In this era of information intelligence, topological materials with unconventional properties have drawn increasing attention, with the growing demand for high-performance electronics, spintronics, optoelectronics, thermoelectrics, etc. Besides, compared to bulk forms, nanostructured topological materials are more compatible with electronic and optoelectronic applications in terms of device integration and fabrication. They also possess enhanced contributions from surface/edge states and geometry-regulated band structures. Therefore, there is a demand for manufacturing and studying nanostructured topological materials. With this motivation, recently there have been burgeoning explorations of nanostructured topological materials. In this review, we systematically summarize the exciting proceedings in both synthesis and characterizations of nanostructured topological materials. We start from the introduction of state-of-the-art synthesis methods, as well as their capability of structural control, feasibility, and potential for scaling up. Then, we summarize the characterization tools and the corresponding properties of nanostructured topological materials, in which the origins of these topologically-related physical properties and their nanostructure dependences are elaborated. Perspectives on the challenges and opportunities are also given in the final part to summarize the advances and propose possible directions in the field of nanostructured topological materials.

拓扑材料作为量子材料的一个分支，以其拓扑非平凡带结构、无质量狄拉克或Weyl费米子、强自旋轨道耦合和边界保护态而著称，具有完全不同于传统绝缘体和金属的奇异物理性质。在信息智能时代，随着高性能电子、自旋电子、光电子、热电等领域的需求日益增长，具有非常规性能的拓扑材料越来越受到人们的关注。此外，与体块材料相比，纳米结构拓扑材料在器件集成和制造方面更适合电子和光电子应用。它们还具有表面/边缘状态和几何调节能带结构的增强贡献。因此，对纳米结构拓扑材料的制造和研究有着迫切的需求。基于这一动机，近年来对纳米结构拓扑材料的探索蓬勃发展。在这篇综述中，我们系统地总结了纳米结构拓扑材料的合成和表征方面令人兴奋的进展。我们从介绍最先进的合成方法，以及它们的结构控制能力、可行性和扩大规模的潜力开始。然后，我们总结了表征工具和纳米结构拓扑材料的相应性质，其中阐述了这些拓扑相关物理性质的起源及其对纳米结构的依赖性。最后对纳米结构拓扑材料领域的挑战和机遇进行了展望，总结了纳米结构拓扑材料领域的研究进展，并提出了可能的发展方向。

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引用次数: 0

Advances in intelligent epitaxy of semiconductor materials 半导体材料智能外延的研究进展

IF 12.5 1区物理与天体物理 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC

Progress in Quantum Electronics

Pub Date : 2025-09-01 DOI: 10.1016/j.pquantelec.2025.100587

Chao Shen , Kang Yang , Wenkang Zhan , Bo Xu , Zhaonan Li , Shujie Pan , Siming Chen , Zhanguo Wang , Chao Zhao

The semiconductor industry is increasingly reliant on advances in epitaxial technologies to meet the demands of high-performance applications such as advanced photonics, quantum computing, and power electronics. However, the nonlinear dynamics of crystal epitaxial growth, combined with stochastic interfacial fluctuations, present significant challenges. These challenges create fundamental difficulties between the control of empirical parameters and the stringent material quality requirements, which hinder systematic improvements in material performance. This paper reviews recent progress in Intelligent Epitaxy, a transformative framework that employs an autonomous architecture consisting of sensing, decision-making, and execution. This framework integrates machine learning with precise characterization and control through three core modules: the Multimodal Sensing Module, the Knowledge-Informed Decision Module, and the Adaptive Control Module. Together, these modules enable comprehensive monitoring of growth dynamics, causal analysis of the relationships between parameters, growth states, and outcomes, as well as the autonomous regulation of growth processes. Additionally, we discuss and address current challenges and issues in this field, providing insights and perspectives for future research. Our review aims to guide the development of a new technological trajectory that goes beyond traditional approaches, positioning intelligent epitaxy as the foundation for next-generation autonomous semiconductor manufacturing.

半导体行业越来越依赖于外延技术的进步，以满足先进光子学、量子计算和电力电子等高性能应用的需求。然而，晶体外延生长的非线性动力学，结合随机界面波动，提出了重大的挑战。这些挑战在控制经验参数和严格的材料质量要求之间造成了根本的困难，这阻碍了材料性能的系统改进。本文回顾了智能外延的最新进展，智能外延是一种采用由传感、决策和执行组成的自主架构的变革性框架。该框架通过三个核心模块将机器学习与精确表征和控制集成在一起：多模态传感模块、知识知情决策模块和自适应控制模块。这些模块共同实现了对生长动态的全面监测，对参数、生长状态和结果之间的关系进行因果分析，以及对生长过程的自主调节。此外，我们还讨论和解决了该领域当前的挑战和问题，为未来的研究提供了见解和观点。我们的回顾旨在指导超越传统方法的新技术轨迹的发展，将智能外延定位为下一代自主半导体制造的基础。

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引用次数: 0

Quantum nanophotonics with energetic particles: X-rays and free electrons 高能粒子的量子纳米光子学：x射线和自由电子

IF 12.5 1区物理与天体物理 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC

Progress in Quantum Electronics

Pub Date : 2025-07-01 DOI: 10.1016/j.pquantelec.2025.100577

Xihang Shi , Wen Wei Lee , Aviv Karnieli , Leon Merten Lohse , Alexey Gorlach , Lee Wei Wesley Wong , Tim Salditt , Shanhui Fan , Ido Kaminer , Liang Jie Wong

Rapid progress in precision nanoscale and atomic-scale design over the past decades has driven transformative advances in controlling the generation and propagation of light, giving rise to the field of nanophotonics. While nanophotonics has traditionally focused on manipulating electromagnetic waves across the microwave to visible spectrum, recent developments have extended its impact into ultrashort-wavelength regimes, including X-rays and free-electron wavepackets. In this review, we highlight the impact and potential of nanophotonics in this relatively unexplored yet technologically disruptive domain, demonstrating how nanoscale and atomic-scale design enable unprecedented technologies in quantum science related to X-rays and free electrons. We place particular emphasis on quantum phenomena arising from electron–photon entanglement in free-electron radiation, including quantum recoil effects, enhancing and controlling X-ray generation through free-electron waveshaping, and the potential for quantum light generation driven by free electrons. The nanoscale control of material structures and light enables manipulation of free-electron-driven X-rays and electron wavepackets at the wavelength scale, revealing quantum features and offering potential pathways for developing novel, compact light and electron sources. We also review high-harmonic generation (HHG), which arises from quasi-free electrons, as a source of extreme ultraviolet and X-rays, including nano-optics-enhanced and quantum light-driven HHG. The review then explores X-ray waveguide nanophotonics, covering waveguide fundamentals, fabrication, mode structures, and applications in coherent imaging and emitter interactions. Finally, we highlight emerging applications of nanophotonics-enabled X-rays and free electrons, including quantum X-ray imaging, X-ray detection, and quantum information technologies, where free electrons are explored as quantum probes, information carriers, and quantum light sources. Our review underscores the unique opportunities within the X-ray and free-electron regimes and the enormous potential of quantum nanophotonics to revolutionize these fields through tailored interactions between photons, free electrons, and nanomaterials.

在过去的几十年里，精密纳米级和原子级设计的快速发展推动了控制光的产生和传播的革命性进步，从而产生了纳米光子学领域。虽然纳米光子学传统上专注于通过微波操纵电磁波到可见光谱，但最近的发展已将其影响扩展到超短波长范围，包括x射线和自由电子波包。在这篇综述中，我们强调了纳米光子学在这个相对未被探索但技术上具有颠覆性的领域的影响和潜力，展示了纳米尺度和原子尺度的设计如何在与x射线和自由电子相关的量子科学中实现前所未有的技术。我们特别强调了自由电子辐射中由电子-光子纠缠引起的量子现象，包括量子反冲效应，通过自由电子波形增强和控制x射线的产生，以及由自由电子驱动的量子光产生的潜力。材料结构和光的纳米级控制使得在波长尺度上操纵自由电子驱动的x射线和电子波包成为可能，揭示量子特征，并为开发新型、紧凑的光和电子源提供潜在途径。我们还回顾了由准自由电子产生的高谐波产生（HHG），作为极紫外和x射线的来源，包括纳米光学增强和量子光驱动的高谐波产生。然后回顾了x射线波导纳米光子学，包括波导的基本原理，制造，模式结构，以及在相干成像和发射器相互作用中的应用。最后，我们重点介绍了纳米光子学支持的x射线和自由电子的新兴应用，包括量子x射线成像，x射线探测和量子信息技术，其中自由电子被探索为量子探针，信息载体和量子光源。我们的综述强调了x射线和自由电子体制内的独特机会，以及量子纳米光子学通过光子、自由电子和纳米材料之间的定制相互作用来彻底改变这些领域的巨大潜力。

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引用次数: 0

Quantum emitters based on hexagonal boron nitride for next-generation quantum technology 下一代量子技术中基于六方氮化硼的量子发射器

IF 7.4 1区物理与天体物理 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC

Progress in Quantum Electronics

Pub Date : 2025-06-11 DOI: 10.1016/j.pquantelec.2025.100576

Semi Im , Seokho Moon , Jawon Kim, Jaesub Song, Changuk Ji, Seonghyeon Pak, Jong Kyu Kim

Hexagonal boron nitride (h-BN), a wide-bandgap layered van der Waals material, has garnered significant attention due to its exceptional properties, making it a highly versatile material in various applications. In particular, recent studies have demonstrated that h-BN hosts stable quantum emitters over a broad spectral range at room temperature, positioning it as a compelling candidate for next generation quantum technology platforms. In this review, we present a comprehensive analysis of optically active defects in h-BN, focusing on their structural and optical properties. In addition, we discuss various defect generation methods and excitation techniques aimed at achieving efficient quantum emission. Furthermore, we highlight advances in integrating h-BN quantum emitters into device architectures, emphasizing their compatibility with photonic circuits and scalable quantum systems. The progress, challenges, and future outlook of h-BN-based quantum emitters as a transformative platform for next-generation quantum technologies are discussed.

六方氮化硼（h-BN）是一种宽带隙层状范德瓦尔斯材料，由于其特殊的性能而引起了人们的广泛关注，使其成为一种用途广泛的材料。特别是，最近的研究表明，h-BN在室温下具有宽光谱范围内稳定的量子发射器，使其成为下一代量子技术平台的引人注目的候选者。在这篇综述中，我们全面分析了h-BN的光学活性缺陷，重点是它们的结构和光学性质。此外，我们讨论了各种缺陷的产生方法和激发技术，旨在实现有效的量子发射。此外，我们强调了将h-BN量子发射器集成到器件架构中的进展，强调了它们与光子电路和可扩展量子系统的兼容性。讨论了氢化氢基量子发射体作为下一代量子技术变革平台的进展、挑战和未来展望。

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引用次数: 0

Advancements in ohmic contact technology for AlGaN/GaN high-electron-mobility transistors AlGaN/GaN高电子迁移率晶体管欧姆接触技术研究进展

IF 7.4 1区物理与天体物理 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC

Progress in Quantum Electronics

Pub Date : 2025-06-10 DOI: 10.1016/j.pquantelec.2025.100578

Ho-Young Kim , Ray-Hua Horng , Hiroshi Amano , Tae-Yeon Seong

AlGaN/GaN-based high electron mobility transistors (HEMTs) hold significant technological importance due to their applications in power electronics, radio frequency (RF) amplifiers, and microwave communication systems. A critical factor affecting the performance of AlGaN/GaN HEMTs is the formation of high-quality ohmic contacts to the source and drain, which facilitates efficient carrier injection from metal electrodes to the semiconductor. Therefore, various approaches have been employed to achieve the formation of high-quality ohmic contacts. This review presents recent advancements in ohmic contact technology for AlGaN/GaN HEMTs. Specifically, we introduce and discuss contact technologies focusing on multilayer schemes under different annealing conditions, Au-free metallization schemes, surface treatments, non-traditional annealing processes, recess etching, selective area regrowth, and ion implantation.

基于AlGaN/ gan的高电子迁移率晶体管（hemt）由于其在电力电子，射频（RF）放大器和微波通信系统中的应用而具有重要的技术重要性。影响AlGaN/GaN hemt性能的一个关键因素是在源极和漏极之间形成高质量的欧姆接触，这有助于从金属电极到半导体的高效载流子注入。因此，采用了各种方法来实现高质量欧姆接触的形成。本文综述了AlGaN/GaN hemt欧姆接触技术的最新进展。具体来说，我们介绍和讨论了不同退火条件下的多层方案、无金金属化方案、表面处理、非传统退火工艺、凹槽蚀刻、选择性区域再生和离子注入等接触技术。

引用次数: 0

Recent progresses on InGaN red micro-LEDs for display 显示用InGaN红色微型led的最新进展

IF 7.4 1区物理与天体物理 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC

Progress in Quantum Electronics

Pub Date : 2025-06-07 DOI: 10.1016/j.pquantelec.2025.100575

Anda Cheng , Zhibiao Hao , Changzheng Sun , Bing Xiong , Yanjun Han , Jian Wang , Hongtao Li , Lin Gan , Yi Luo , Lai Wang

Micro-scale light-emitting diodes (micro-LEDs), with their high brightness, high resolution, and low power consumption, are emerging as a promising candidate for the next-generation display. Among them, InGaN red micro-LEDs, as a crucial component of full-color micro-displays, have attracted significant attention for their smaller size effect, higher thermal stability, and compatibility with blue and green micro-LED fabrication processes and so on, when compared to AlGaInP red micro-LEDs. However, for next-generation display technologies such as augmented reality (AR), InGaN red micro-LEDs still fall short of meeting the requirements. Specifically, the efficiency of InGaN red micro-LEDs with the ultra-small size needed for AR applications is still very low, necessitating a high working current density. Unfortunately, a high current density leads to a significant blueshift in the emission wavelength, which results in color deviation, failing to meet the requirements for red display devices. This review has introduced two approaches to address the aforementioned issues, namely enhancing the efficiency of InGaN red micro-LEDs or suppressing the blueshift, and has listed the performances of recent typical InGaN red micro-LEDs. Finally, the potential of InGaN red micro-LEDs in the full-color monolithic displays has been discussed.

微尺度发光二极管（micro- led）以其高亮度、高分辨率、低功耗的特点，正成为下一代显示器的理想选择。其中，InGaN红色微led作为全彩微显示屏的关键组成部分，与AlGaInP红色微led相比，具有更小的尺寸效应、更高的热稳定性以及与蓝绿微led制造工艺的兼容性等特点，备受关注。然而，对于增强现实（AR）等下一代显示技术，InGaN红色微型led仍然无法满足要求。具体来说，AR应用所需的超小尺寸InGaN红色微型led的效率仍然很低，需要高工作电流密度。不幸的是，高电流密度会导致发射波长出现明显的蓝移，从而导致颜色偏差，无法满足红色显示器件的要求。本文介绍了两种解决上述问题的方法，即提高InGaN红色微型led的效率或抑制蓝移，并列出了最近典型的InGaN红色微型led的性能。最后，讨论了InGaN红色微型led在全彩单片显示领域的潜力。

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引用次数: 0