Progress in Quantum Electronics最新文献

{"title":"Ultrafast optical spectroscopy with quantum light and quantum control","authors":"Jiahao Joel Fan ,&nbsp;Xiu-Hao Deng ,&nbsp;Zhedong Zhang","doi":"10.1016/j.pquantelec.2026.100613","DOIUrl":"10.1016/j.pquantelec.2026.100613","url":null,"abstract":"<div><div>Classical light such as lasers and thermal radiation has long been utilized for spectroscopy to explore material structures and dynamics. However, quantum states of light open new avenues for ultrafast optics and spectroscopy, by the variation of their unique properties, e.g., entanglement and photon statistics, after interacting with materials. Quantum light possesses unique characteristics that distinguish it from classical light, particularly the phase-space distribution which reflects its fundamental quantum statistics and the quantum control protocol that may take advantage of noise reduction. This Review will focus on spectroscopic applications using entangled photons and squeezed light, in conjunction with quantum coherent control. We provide a brief introduction to the generation of the entangled and squeezed light, discussing their fundamental properties and connections to the control protocol that may enhance spectroscopic techniques. A microscopic theory for the spectroscopy and corresponding signals induced by certain transition processes is developed. Nonlinear optical signals induced by entangled photons for the coherent anti-Stokes Raman spectra (CARS) and the stimulated Raman spectra (SRS) are investigated. We further extend our efforts to the transient absorption process that enables real-time monitoring of the exciton transfer in the transition metal dichalcogenides (TMDs), namely, using the WS<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span> monolayer. This series of works on nonlinear optical spectroscopy using quantum light explicitly demonstrates the quantum supremacy in ultrafast spectroscopy through jointly enhancing the time and energy scales beyond the classical bound.</div></div>","PeriodicalId":414,"journal":{"name":"Progress in Quantum Electronics","volume":"107 ","pages":"Article 100613"},"PeriodicalIF":12.5,"publicationDate":"2026-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146072387","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Integrated quantum photonics on thin-film lithium niobate","authors":"F. Karami ,&nbsp;P. Thapalia ,&nbsp;S. Fathpour","doi":"10.1016/j.pquantelec.2026.100614","DOIUrl":"10.1016/j.pquantelec.2026.100614","url":null,"abstract":"<div><div>Quantum optics, the study of nonclassical states of light, has long been pursued and recently evolved into integrated quantum photonics. That is, transforming the field into a viable technology for scalable, stable, and reconfigurable quantum information processing, secure communication, and sensing systems beyond the limits of classical optics. Among the various integrated material platforms, thin-film lithium niobate (TFLN) has recently attracted significant attention for quantum applications, due to its strong second-order nonlinear and electro-optic (EO) properties, and wide transparency range. Unlike conventional bulk lithium niobate photonics, which suffers from low optical confinement and limited wafer-scale scalability, TFLN enables submicron waveguides, tight bending radii, and dense photonic integration, leading to enhanced nonlinear interactions and compact device and circuit footprints. In addition, TFLN has potential for heterogeneous integration with other materials for access to other functionalities on the same chip, e.g., photodetection, low-loss passive optics, and third-order nonlinear optics.</div><div>This paper reviews the progress of integrated quantum photonics based on TFLN, highlighting early groundbreaking works, recent experimental milestones, and future opportunities and challenges. We start with an overview of the progress in classical EO devices, which are indispensable building blocks for quantum photonic integrated circuits such as cryogenic transducers. Background and progress in both second- and third-order nonlinear effects, such as frequency conversion, parametric effects, and related applications, like optical frequency combs, are reviewed. We will then focus on demonstrated quantum-optical effects on TFLN devices and circuits. Specifically, generation of high-brightness and spectrally pure quantum-correlated and entangled photons through spontaneous parametric down-conversion, as well as demonstrations of squeezed-light sources, are discussed. Moreover, we present an overview of experimental demonstrations of quantum key distribution and Hong–Ou–Mandel interferometry based on TFLN. Related works on quantum cryptography, i.e., photonic qubit encoding in the time, frequency, and polarization domains, are covered next. The final sections of this paper discuss heterogeneous integration with laser sources and superconducting photodetectors, and an outlook on the progress and challenges of reducing the optical propagation loss towards practical, fully-packaged, and low-loss quantum photonic systems on TFLN.</div></div>","PeriodicalId":414,"journal":{"name":"Progress in Quantum Electronics","volume":"106 ","pages":"Article 100614"},"PeriodicalIF":12.5,"publicationDate":"2026-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146209898","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"III-nitride nanowire-based lasers for next-generation optoelectronic and display applications","authors":"Sung-Un Kim,&nbsp;Min-Seok Lee,&nbsp;Jeong-Kyun Oh,&nbsp;Jong-Su Kim,&nbsp;Geon-Yeong Kim,&nbsp;In-Seo Na,&nbsp;Ha-Neul Eom,&nbsp;Yong-Ho Ra","doi":"10.1016/j.pquantelec.2025.100597","DOIUrl":"10.1016/j.pquantelec.2025.100597","url":null,"abstract":"<div><div>III-nitride nanowires (NWs) have emerged as a versatile platform for nanoscale optoelectronics, combining unique attributes such as strain relaxation, defect tolerance, strong carrier confinement, and compatibility with silicon backplanes. Advances in epitaxial growth techniques, including molecular beam epitaxy (MBE), metal-organic chemical vapor deposition (MOCVD), and selective-area epitaxy (SAE), have enabled deterministic control over high-quality, compositionally flexible NW arrays. These breakthroughs have led to diverse device architectures, spanning Fabry-Pérot (FP) cavities, whispering gallery modes (WGM), plasmonic resonators, random cavities, and photonic crystal arrays, achieving low-threshold lasing, narrow linewidths, and spectral tunability. NW light-emitting diodes (LEDs) have further demonstrated polarization-free emission, geometry-driven color tuning, and monolithic full-color operation without phosphors, addressing long-standing challenges such as the “green gap” and scalable RGB integration. These structural and device-level advantages are now converging with the stringent requirements of next-generation AR/VR/XR micro-displays, which demand extreme luminance, sub-micron pixel pitches, narrow spectral linewidths, and directional emission for efficient coupling into waveguide optics. While conventional micro-LEDs face severe efficiency bottlenecks at deep submicron scales, NW lasers, particularly photonic-crystal and tunnel-junction surface-emitting designs, offer coherence, spectral purity, and engineered far-fields that are well aligned with immersive display engines. We further link these advances to system-level performance benchmarks, including luminance after optical combiners, spectral stability, power efficiency, and manufacturability. Finally, beyond displays, progress in tunnel junction integration and photonic-crystal NW surface-emitting lasers highlights the future application potential of this technology in on-chip photonic interconnects, quantum light sources, and emerging optical computing paradigms. By bridging nanoscale materials science with application-driven requirements, III-nitride NW lasers are positioned as a transformative platform for both optoelectronics and next-generation display technologies.</div></div>","PeriodicalId":414,"journal":{"name":"Progress in Quantum Electronics","volume":"105 ","pages":"Article 100597"},"PeriodicalIF":12.5,"publicationDate":"2026-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145689881","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Research progresses on epitaxy and sidewall treatment for micro-LEDs","authors":"Weijie Guo ,&nbsp;Wenjie He ,&nbsp;Zhengwen Qi ,&nbsp;Jinfeng Zhang ,&nbsp;Changdong Tong ,&nbsp;Minhua Li ,&nbsp;Jiansheng Zhong ,&nbsp;Yijun Lu ,&nbsp;Tingzhu Wu ,&nbsp;Zhong Chen ,&nbsp;Rong Zhang","doi":"10.1016/j.pquantelec.2025.100598","DOIUrl":"10.1016/j.pquantelec.2025.100598","url":null,"abstract":"<div><div>Micro-LEDs have emerged as promising light sources for high-resolution displays, yet their commercialization faces persistent challenges in simultaneously achieving high efficiency, extended operational lifespan, and spectral stability. Recent advances in understanding carrier dynamics within micro-LEDs, including injection, transport, spatial distribution, radiative recombination, and nonradiative recombination, have fundamentally driven the development of advanced epitaxial growth, mesa-etching techniques, and sidewall treatment. In addition to the traditional InGaN-based blue/green and AlGaInP-based red micro-LEDs, InGaN-based red micro-LEDs have demonstrated notable advancement in luminous characteristics. This review presents the cutting-edge epitaxial strategies and innovative sidewall treatment methodologies, while providing an assessment of their impacts on the performance of micro-LEDs.</div></div>","PeriodicalId":414,"journal":{"name":"Progress in Quantum Electronics","volume":"104 ","pages":"Article 100598"},"PeriodicalIF":12.5,"publicationDate":"2025-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145613792","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Magnetic field driven emergent phenomena: Insights from magneto-optics and nanoscopy","authors":"Zhenbing Dai ,&nbsp;Bing Cheng ,&nbsp;Ran Jing ,&nbsp;Lukas Wehmeier ,&nbsp;Zhurun Ji ,&nbsp;D.N. Basov ,&nbsp;Guangxin Ni ,&nbsp;Mengkun Liu","doi":"10.1016/j.pquantelec.2025.100585","DOIUrl":"10.1016/j.pquantelec.2025.100585","url":null,"abstract":"<div><div>This review explores magnetic field-driven emergent phenomena across various material systems, emphasizing the pivotal roles of magneto-optical and nanoscopy techniques. We examine fundamental aspects of Landau electrodynamics in both 2D and 3D systems, including quantum Hall and topological magnetoelectric effects in graphene and topological insulators. Particularly attention is given to magnetic excitations and magnetopolaritons, such as surface magnon polaritons, magnetoplasmons, and magnetoexcitons in novel quantum materials, including quantum magnets and hybrid heterostructures. Advanced imaging techniques, such as scattering-type scanning near-field optical microscopy (SNOM) and microwave impedance microscopy, are showcased for their capability to resolve these phenomena with microscopic and nanoscopic resolution. These insights are complemented by discussions of advanced experimental approaches, including cryogenic environments, ultrafast pump-probe techniques, and the integration of magnetic fields into near-field optical methodologies. We further investigate the potential of these imaging techniques for unraveling complex magnetic orders, quantum phases, and correlated electronic behaviors. Finally, we offer perspectives on future research directions and highlight emerging opportunities in the evolving field of optical magneto-nanoscopy.</div></div>","PeriodicalId":414,"journal":{"name":"Progress in Quantum Electronics","volume":"103 ","pages":"Article 100585"},"PeriodicalIF":12.5,"publicationDate":"2025-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145109674","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Hybrid classical-quantum communication networks","authors":"Joseph M. Lukens ,&nbsp;Nicholas A. Peters ,&nbsp;Bing Qi","doi":"10.1016/j.pquantelec.2025.100586","DOIUrl":"10.1016/j.pquantelec.2025.100586","url":null,"abstract":"<div><div>Over the past several decades, the proliferation of global classical communication networks has transformed various facets of human society. Concurrently, quantum networking has emerged as a dynamic field of research, driven by its potential applications in distributed quantum computing, quantum sensor networks, and secure communications. This prompts a fundamental question: rather than constructing quantum networks from scratch, can we harness the widely available classical fiber-optic infrastructure to establish hybrid quantum–classical networks? This paper aims to provide a comprehensive review of ongoing research endeavors aimed at integrating quantum communication protocols, such as quantum key distribution, into existing lightwave networks. This approach offers the substantial advantage of reducing implementation costs by allowing classical and quantum communication protocols to share optical fibers, communication hardware, and other network control resources—arguably the most pragmatic solution in the near term. In the long run, classical communication will also reap the rewards of innovative quantum communication technologies, such as quantum memories and repeaters. Accordingly, our vision for the future of the Internet is that of heterogeneous communication networks thoughtfully designed for the seamless support of both classical and quantum communications.</div></div>","PeriodicalId":414,"journal":{"name":"Progress in Quantum Electronics","volume":"103 ","pages":"Article 100586"},"PeriodicalIF":12.5,"publicationDate":"2025-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145156694","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Synthesis and characterization of nanostructured topological materials","authors":"Qinyuan Jiang ,&nbsp;Arka Chatterjee ,&nbsp;Shengxi Huang","doi":"10.1016/j.pquantelec.2025.100588","DOIUrl":"10.1016/j.pquantelec.2025.100588","url":null,"abstract":"<div><div>As a branch of quantum materials, topological materials are noted for their topologically nontrivial band structures, massless Dirac or Weyl fermions, strong spin-orbit coupling, and boundary-protected states, endowed with exotic physical properties totally different from those of conventional insulators and metals. In this era of information intelligence, topological materials with unconventional properties have drawn increasing attention, with the growing demand for high-performance electronics, spintronics, optoelectronics, thermoelectrics, <em>etc</em>. Besides, compared to bulk forms, nanostructured topological materials are more compatible with electronic and optoelectronic applications in terms of device integration and fabrication. They also possess enhanced contributions from surface/edge states and geometry-regulated band structures. Therefore, there is a demand for manufacturing and studying nanostructured topological materials. With this motivation, recently there have been burgeoning explorations of nanostructured topological materials. In this review, we systematically summarize the exciting proceedings in both synthesis and characterizations of nanostructured topological materials. We start from the introduction of state-of-the-art synthesis methods, as well as their capability of structural control, feasibility, and potential for scaling up. Then, we summarize the characterization tools and the corresponding properties of nanostructured topological materials, in which the origins of these topologically-related physical properties and their nanostructure dependences are elaborated. Perspectives on the challenges and opportunities are also given in the final part to summarize the advances and propose possible directions in the field of nanostructured topological materials.</div></div>","PeriodicalId":414,"journal":{"name":"Progress in Quantum Electronics","volume":"103 ","pages":"Article 100588"},"PeriodicalIF":12.5,"publicationDate":"2025-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145314993","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Advances in intelligent epitaxy of semiconductor materials","authors":"Chao Shen ,&nbsp;Kang Yang ,&nbsp;Wenkang Zhan ,&nbsp;Bo Xu ,&nbsp;Zhaonan Li ,&nbsp;Shujie Pan ,&nbsp;Siming Chen ,&nbsp;Zhanguo Wang ,&nbsp;Chao Zhao","doi":"10.1016/j.pquantelec.2025.100587","DOIUrl":"10.1016/j.pquantelec.2025.100587","url":null,"abstract":"<div><div>The semiconductor industry is increasingly reliant on advances in epitaxial technologies to meet the demands of high-performance applications such as advanced photonics, quantum computing, and power electronics. However, the nonlinear dynamics of crystal epitaxial growth, combined with stochastic interfacial fluctuations, present significant challenges. These challenges create fundamental difficulties between the control of empirical parameters and the stringent material quality requirements, which hinder systematic improvements in material performance. This paper reviews recent progress in Intelligent Epitaxy, a transformative framework that employs an autonomous architecture consisting of sensing, decision-making, and execution. This framework integrates machine learning with precise characterization and control through three core modules: the Multimodal Sensing Module, the Knowledge-Informed Decision Module, and the Adaptive Control Module. Together, these modules enable comprehensive monitoring of growth dynamics, causal analysis of the relationships between parameters, growth states, and outcomes, as well as the autonomous regulation of growth processes. Additionally, we discuss and address current challenges and issues in this field, providing insights and perspectives for future research. Our review aims to guide the development of a new technological trajectory that goes beyond traditional approaches, positioning intelligent epitaxy as the foundation for next-generation autonomous semiconductor manufacturing.</div></div>","PeriodicalId":414,"journal":{"name":"Progress in Quantum Electronics","volume":"103 ","pages":"Article 100587"},"PeriodicalIF":12.5,"publicationDate":"2025-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145218163","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Advancements in ohmic contact technology for AlGaN/GaN high-electron-mobility transistors","authors":"Ho-Young Kim ,&nbsp;Ray-Hua Horng ,&nbsp;Hiroshi Amano ,&nbsp;Tae-Yeon Seong","doi":"10.1016/j.pquantelec.2025.100578","DOIUrl":"10.1016/j.pquantelec.2025.100578","url":null,"abstract":"<div><div>AlGaN/GaN-based high electron mobility transistors (HEMTs) hold significant technological importance due to their applications in power electronics, radio frequency (RF) amplifiers, and microwave communication systems. A critical factor affecting the performance of AlGaN/GaN HEMTs is the formation of high-quality ohmic contacts to the source and drain, which facilitates efficient carrier injection from metal electrodes to the semiconductor. Therefore, various approaches have been employed to achieve the formation of high-quality ohmic contacts. This review presents recent advancements in ohmic contact technology for AlGaN/GaN HEMTs. Specifically, we introduce and discuss contact technologies focusing on multilayer schemes under different annealing conditions, Au-free metallization schemes, surface treatments, non-traditional annealing processes, recess etching, selective area regrowth, and ion implantation.</div></div>","PeriodicalId":414,"journal":{"name":"Progress in Quantum Electronics","volume":"102 ","pages":"Article 100578"},"PeriodicalIF":7.4,"publicationDate":"2025-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144271593","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Quantum nanophotonics with energetic particles: X-rays and free electrons","authors":"Xihang Shi ,&nbsp;Wen Wei Lee ,&nbsp;Aviv Karnieli ,&nbsp;Leon Merten Lohse ,&nbsp;Alexey Gorlach ,&nbsp;Lee Wei Wesley Wong ,&nbsp;Tim Salditt ,&nbsp;Shanhui Fan ,&nbsp;Ido Kaminer ,&nbsp;Liang Jie Wong","doi":"10.1016/j.pquantelec.2025.100577","DOIUrl":"10.1016/j.pquantelec.2025.100577","url":null,"abstract":"<div><div>Rapid progress in precision nanoscale and atomic-scale design over the past decades has driven transformative advances in controlling the generation and propagation of light, giving rise to the field of nanophotonics. While nanophotonics has traditionally focused on manipulating electromagnetic waves across the microwave to visible spectrum, recent developments have extended its impact into ultrashort-wavelength regimes, including X-rays and free-electron wavepackets. In this review, we highlight the impact and potential of nanophotonics in this relatively unexplored yet technologically disruptive domain, demonstrating how nanoscale and atomic-scale design enable unprecedented technologies in quantum science related to X-rays and free electrons. We place particular emphasis on quantum phenomena arising from electron–photon entanglement in free-electron radiation, including quantum recoil effects, enhancing and controlling X-ray generation through free-electron waveshaping, and the potential for quantum light generation driven by free electrons. The nanoscale control of material structures and light enables manipulation of free-electron-driven X-rays and electron wavepackets at the wavelength scale, revealing quantum features and offering potential pathways for developing novel, compact light and electron sources. We also review high-harmonic generation (HHG), which arises from quasi-free electrons, as a source of extreme ultraviolet and X-rays, including nano-optics-enhanced and quantum light-driven HHG. The review then explores X-ray waveguide nanophotonics, covering waveguide fundamentals, fabrication, mode structures, and applications in coherent imaging and emitter interactions. Finally, we highlight emerging applications of nanophotonics-enabled X-rays and free electrons, including quantum X-ray imaging, X-ray detection, and quantum information technologies, where free electrons are explored as quantum probes, information carriers, and quantum light sources. Our review underscores the unique opportunities within the X-ray and free-electron regimes and the enormous potential of quantum nanophotonics to revolutionize these fields through tailored interactions between photons, free electrons, and nanomaterials.</div></div>","PeriodicalId":414,"journal":{"name":"Progress in Quantum Electronics","volume":"102 ","pages":"Article 100577"},"PeriodicalIF":12.5,"publicationDate":"2025-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144766742","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}