High-precision quantitative atomic-site-analysis of functional dopants in crystalline materials by electron-channelling-enhanced microanalysis

IF 4.5 2区 材料科学 Q1 CRYSTALLOGRAPHY Progress in Crystal Growth and Characterization of Materials Pub Date : 2017-06-01 DOI:10.1016/j.pcrysgrow.2017.02.001
Shunsuke Muto , Masahiro Ohtsuka
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引用次数: 4

Abstract

Knowledge of the location and concentration of impurity atoms doped into a synthesized material is of great interest to investigate the effect of doping. This would usually be investigated using X-ray or neutron diffraction methods in combination with Rietveld analysis. However, this technique requires a large-scale facility such as a synchrotron radiation source and nuclear reactor, and can sometimes fail to produce the desired results, depending on the constituent elements and the crystallographic conditions that are being analysed. Thus, it would be preferable to use an element-selective spectroscopy technique that is applicable to any combination of elements. We have established a quantitative method to deduce the occupation sites and their occupancies, as well as the site-dependent chemical states of the doped elements, using a combination of transmission electron microscopy (TEM), energy-dispersive X-ray (EDX) spectroscopy, and electron energy-loss spectroscopy (EELS). The method is based on electron channelling phenomena where the symmetries of the Bloch waves excited in a crystal are dependent on the diffraction condition or incident beam direction with respect to the crystal axes. By rocking the incident electron beam with a fixed pivot point on the sample surface, a set of EDX/EELS spectra are obtained as a function of the beam direction. This is followed by a statistical treatment to extract the atom-site-dependent spectra, thereby quantitatively enabling the estimation of the site occupancies and chemical states of the dopants. This is an extension of the ‘ALCHEMI’ (Atom Location by Channelling Enhanced Microanalysis) method or ‘HARECXS/HARECES’ (High Angular Resolution Channelled X-ray/Electron Spectroscopy), and we further extended the method to be applicable to cases where the crystal of interest contains multiple inequivalent atomic sites for a particular element, applying the precise spectral predictions based on electron elastic/inelastic dynamical scattering theory. After introduction of conceptual aspects of the method, we describe the extension of the method together with the development of the theoretical calculation method. We then demonstrate several useful applications of the method, including luminescent, ferrite, and battery materials. We discuss the advantages and drawbacks of the present method, compared with those of the recently developed atomic column-by-column analysis using aberration-corrected scanning TEM and high-efficiency X-ray detectors.

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基于电子通道增强微分析的晶体材料中功能掺杂剂的高精度定量原子位分析
了解掺杂到合成材料中的杂质原子的位置和浓度对研究掺杂的影响具有重要意义。这通常用x射线或中子衍射法结合里特费尔德分析来研究。然而,这种技术需要大型设施,如同步加速器辐射源和核反应堆,有时可能无法产生预期的结果,这取决于所分析的组成元素和晶体学条件。因此,优选使用适用于任何元素组合的元素选择光谱学技术。我们建立了一种定量的方法来推断占据位点及其占有率,以及掺杂元素的位置依赖的化学状态,使用透射电子显微镜(TEM),能量色散x射线(EDX)光谱和电子能量损失光谱(EELS)的组合。该方法基于电子通道现象,其中晶体中激发的布洛赫波的对称性取决于衍射条件或入射光束相对于晶体轴的方向。通过使入射电子束在样品表面以固定的枢轴点摇摆,得到了一组随电子束方向变化的EDX/EELS谱。随后进行统计处理以提取原子位置相关光谱,从而定量地估计位点占用和掺杂剂的化学状态。这是“ALCHEMI”(通过通道增强微分析进行原子定位)方法或“HARECXS/HARECES”(高角分辨率通道x射线/电子能谱)的扩展,我们进一步扩展了该方法,使其适用于感兴趣的晶体包含特定元素的多个不等效原子位的情况,应用基于电子弹性/非弹性动态散射理论的精确光谱预测。在介绍了该方法的概念方面之后,我们描述了该方法的扩展以及理论计算方法的发展。然后我们演示了该方法的几个有用的应用,包括发光,铁氧体和电池材料。我们讨论了本方法的优点和缺点,并与最近发展的原子逐柱分析方法进行了比较,这些分析方法使用了像差校正扫描TEM和高效x射线探测器。
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来源期刊
Progress in Crystal Growth and Characterization of Materials
Progress in Crystal Growth and Characterization of Materials 工程技术-材料科学:表征与测试
CiteScore
8.80
自引率
2.00%
发文量
10
审稿时长
1 day
期刊介绍: Materials especially crystalline materials provide the foundation of our modern technologically driven world. The domination of materials is achieved through detailed scientific research. Advances in the techniques of growing and assessing ever more perfect crystals of a wide range of materials lie at the roots of much of today''s advanced technology. The evolution and development of crystalline materials involves research by dedicated scientists in academia as well as industry involving a broad field of disciplines including biology, chemistry, physics, material sciences and engineering. Crucially important applications in information technology, photonics, energy storage and harvesting, environmental protection, medicine and food production require a deep understanding of and control of crystal growth. This can involve suitable growth methods and material characterization from the bulk down to the nano-scale.
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