Photonic Ge-Sb-Te phase change metamaterials and their applications

IF 7.4 1区 物理与天体物理 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC Progress in Quantum Electronics Pub Date : 2020-11-01 DOI:10.1016/j.pquantelec.2020.100299
Tun Cao , Rongzi Wang , Robert E. Simpson , Guixin Li
{"title":"Photonic Ge-Sb-Te phase change metamaterials and their applications","authors":"Tun Cao ,&nbsp;Rongzi Wang ,&nbsp;Robert E. Simpson ,&nbsp;Guixin Li","doi":"10.1016/j.pquantelec.2020.100299","DOIUrl":null,"url":null,"abstract":"<div><p><span>The ultrafast, reversible, nonvolatile and multistimuli responsive phase change of Ge-Sb-Te (GST) alloy makes it an interesting “smart” material. The optical features of GST undergo significant variation when its state changes between amorphous<span><span><span> and crystalline, meaning that they are useful for tuning photonic components. A GST </span>phase change material (PCM) can be efficiently triggered by stimuli such as short optical or electrical pulses, providing versatility in high-performance photonic applications and excellent capability to control light. In this review, we study the fundamentals of GST-tuned photonics and systematically summarise the progress in this area. We then introduce current developments in both GST-metal hybrid </span>metamaterials<span> and GST-based dielectric metamaterials, and investigate the strategy of designing reversibly switchable GST-based </span></span></span>photonic devices<span> and their advantages. These devices may have a vast array of potential applications in optical memories, switches, data storage, cloaking, photodetectors, modulators, antennas etc. Finally, the prospect of implementing GST PCM in emerging fields within photonics is considered.</span></p></div>","PeriodicalId":414,"journal":{"name":"Progress in Quantum Electronics","volume":null,"pages":null},"PeriodicalIF":7.4000,"publicationDate":"2020-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/j.pquantelec.2020.100299","citationCount":"20","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Progress in Quantum Electronics","FirstCategoryId":"101","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0079672720300586","RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 20

Abstract

The ultrafast, reversible, nonvolatile and multistimuli responsive phase change of Ge-Sb-Te (GST) alloy makes it an interesting “smart” material. The optical features of GST undergo significant variation when its state changes between amorphous and crystalline, meaning that they are useful for tuning photonic components. A GST phase change material (PCM) can be efficiently triggered by stimuli such as short optical or electrical pulses, providing versatility in high-performance photonic applications and excellent capability to control light. In this review, we study the fundamentals of GST-tuned photonics and systematically summarise the progress in this area. We then introduce current developments in both GST-metal hybrid metamaterials and GST-based dielectric metamaterials, and investigate the strategy of designing reversibly switchable GST-based photonic devices and their advantages. These devices may have a vast array of potential applications in optical memories, switches, data storage, cloaking, photodetectors, modulators, antennas etc. Finally, the prospect of implementing GST PCM in emerging fields within photonics is considered.

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光子Ge-Sb-Te相变超材料及其应用
Ge-Sb-Te (GST)合金的超快速、可逆、非挥发性和多刺激响应相变使其成为一种有趣的“智能”材料。GST在晶态和非晶态之间变化时,其光学特性发生显著变化,这意味着它们可用于调谐光子元件。GST相变材料(PCM)可以通过短光脉冲或电脉冲等刺激有效触发,为高性能光子应用提供多功能性和出色的光控制能力。本文综述了gst调谐光子学的基本原理,并系统地总结了该领域的研究进展。然后,我们介绍了gst -金属混合超材料和gst基介电超材料的最新进展,并研究了设计可逆可切换gst基光子器件的策略及其优势。这些器件可能在光存储器、开关、数据存储、隐身、光电探测器、调制器、天线等方面具有广泛的潜在应用。最后,展望了GST PCM在光子学新兴领域的应用前景。
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来源期刊
Progress in Quantum Electronics
Progress in Quantum Electronics 工程技术-工程:电子与电气
CiteScore
18.50
自引率
0.00%
发文量
23
审稿时长
150 days
期刊介绍: Progress in Quantum Electronics, established in 1969, is an esteemed international review journal dedicated to sharing cutting-edge topics in quantum electronics and its applications. The journal disseminates papers covering theoretical and experimental aspects of contemporary research, including advances in physics, technology, and engineering relevant to quantum electronics. It also encourages interdisciplinary research, welcoming papers that contribute new knowledge in areas such as bio and nano-related work.
期刊最新文献
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