Electrochemical formation of Sn films on copper by overpotential and underpotential electrodeposition in deep eutectic solvents

IF 4.5 3区 化学 Q1 Chemical Engineering Journal of Electroanalytical Chemistry Pub Date : 2023-09-01 DOI:10.1016/j.jelechem.2023.117637
L.A. Azpeitia , C.A. Gervasi , A.E. Bolzán
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Abstract

The electrodeposition process of tin films on copper electrodes in ethaline and reline deep eutectic solvents (DES) was studied in the 303 – 353 K range. Voltammetric data indicate the presence of underpotential and overpotential electrodeposition processes. While the former occurs under surface-reaction control, the latter proceeds under mass transport control. Electrochemical impedance spectroscopy shows two capacitive contributions during the underpotential process and a single capacitive contribution at high frequencies and a Warburg contribution at low frequencies, when the electrodeposition process takes place in the overpotential region. Tin deposits obtained in ethaline exhibit blunt particles with ordered structures whereas in reline facetted particles with no preferential order are observed as electrodeposition time is increased. The electrocrystallization mechanism under overpotential conditions in ethaline and reline corresponds to an instantaneous nucleation and a 3D growth process. For underpotential conditions in ethaline, an instantaneous nucleation and 2D growth coupled to an adsorption process occurs. XRD spectra shows the formation of Cu3Sn and Cu6Sn5 intermetallics due to the diffusion of Sn atoms into the Cu lattice during the electrodeposition process. From rotating disk electrode measurements, the diffusion coefficient of Sn(II) ions in both DES at different temperatures, and the diffusion activation energy, were determined.

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深共晶溶剂中过电位和欠电位电沉积在铜上形成锡膜的电化学研究
在303 ~ 353 K范围内,研究了在乙炔和线深共晶溶剂(DES)中在铜电极上沉积锡膜的过程。伏安数据表明存在过电位和欠电位电沉积过程。前者在表面反应控制下发生,后者在质量输运控制下进行。电化学阻抗谱分析表明,欠电位过程中存在两个电容贡献;过电位区发生电沉积过程时,高频电容贡献为单一电容贡献,低频电容贡献为Warburg贡献。随着电沉积时间的增加,在乙炔中得到的锡镀层呈现出钝状的、结构有序的颗粒,而在线沉积中得到的面状颗粒没有优先顺序。过电位条件下的电结晶机制符合瞬时成核和三维生长过程。对于低电位条件下的乙炔,瞬时成核和二维生长耦合到吸附过程发生。XRD谱图显示,在电沉积过程中,由于Sn原子扩散到Cu晶格中,形成了Cu3Sn和Cu6Sn5金属间化合物。通过旋转圆盘电极测量,测定了不同温度下Sn(II)离子在两种DES中的扩散系数和扩散活化能。
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来源期刊
Journal of Electroanalytical Chemistry
Journal of Electroanalytical Chemistry Chemical Engineering-General Chemical Engineering
CiteScore
7.50
自引率
6.70%
发文量
912
审稿时长
>12 weeks
期刊介绍: The Journal of Electroanalytical Chemistry is the foremost international journal devoted to the interdisciplinary subject of electrochemistry in all its aspects, theoretical as well as applied. Electrochemistry is a wide ranging area that is in a state of continuous evolution. Rather than compiling a long list of topics covered by the Journal, the editors would like to draw particular attention to the key issues of novelty, topicality and quality. Papers should present new and interesting electrochemical science in a way that is accessible to the reader. The presentation and discussion should be at a level that is consistent with the international status of the Journal. Reports describing the application of well-established techniques to problems that are essentially technical will not be accepted. Similarly, papers that report observations but fail to provide adequate interpretation will be rejected by the Editors. Papers dealing with technical electrochemistry should be submitted to other specialist journals unless the authors can show that their work provides substantially new insights into electrochemical processes.
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