High strain rate nanoindentation testing: Recent advancements, challenges and opportunities

IF 12.2 2区 材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY Current Opinion in Solid State & Materials Science Pub Date : 2023-02-01 DOI:10.1016/j.cossms.2022.101054
P. Sudharshan Phani , B.L. Hackett , C.C. Walker , W.C. Oliver , G.M. Pharr
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引用次数: 5

Abstract

Recent advancements in electronics have renewed the interest in high strain rate nanoindentation testing, resulting in the development of new high strain rate nanoindentation test equipment and test methodologies. In this work, the current state-of-the-art in high strain rate nanoindentation testing is critically reviewed, with focus on three key aspects - the testing equipment's dynamic mechanical and electronic response, test methodology, and post-processing of raw data to obtain hardness and strain rate. The challenges in instrument hardware design and post-test data analysis are discussed, along with optimal strain rate window for accurate high strain rate measurements. Specific focus will be on instrumented high strain rate testing using self-similar indenters at strain rates in excess of 100 s−1, wherein load and depth of penetration into the sample are both measured or applied.

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高应变率纳米压痕测试:最新进展、挑战和机遇
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来源期刊
Current Opinion in Solid State & Materials Science
Current Opinion in Solid State & Materials Science 工程技术-材料科学:综合
CiteScore
21.10
自引率
3.60%
发文量
41
审稿时长
47 days
期刊介绍: Title: Current Opinion in Solid State & Materials Science Journal Overview: Aims to provide a snapshot of the latest research and advances in materials science Publishes six issues per year, each containing reviews covering exciting and developing areas of materials science Each issue comprises 2-3 sections of reviews commissioned by international researchers who are experts in their fields Provides materials scientists with the opportunity to stay informed about current developments in their own and related areas of research Promotes cross-fertilization of ideas across an increasingly interdisciplinary field
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