Romain Cariou;Jan Benick;Paul Beutel;Nasser Razek;Christoph Flötgen;Martin Hermle;David Lackner;Stefan W. Glunz;Andreas W. Bett;Markus Wimplinger;Frank Dimroth
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引用次数: 89
Abstract
Stacking III-V p-n junctions on top of wafer-based silicon solar cells is a promising way to go beyond the silicon single-junction efficiency limit. In this study, triple-junction GaInP/Al
x
Ga
1-x
As//Si solar cells were fabricated using surface-activated direct wafer bonding. Metal-organic-vapor-phase-epitaxy-grown GaInP/Al
x
Ga
1-x
As top cells are bonded at low temperature to independently prepared wafer-based silicon cells. n-Si//n-GaAs interfaces were investigated and achieved bulk-like bond strength, high transparency, and conductivity homogeneously over 4-inch wafer area. We used transfer-matrix optical modeling to identify the best design options to reach current-matched two-terminal devices with different mid-cell bandgaps (1.42, 1.47, and 1.52 eV). Solar cells were fabricated accordingly and calibrated under AM1.5g 1-sun conditions. An improved Si back-side passivation process is presented, leading to a current density of 12.4 mA/cm
2
(AM1.5g), measured for a flat Si cell below GaAs. The best 4 cm
2
GaInP/GaAs//Si triple-junction cell reaches 30.2% 1-sun efficiency.
期刊介绍：
The IEEE Journal of Photovoltaics is a peer-reviewed, archival publication reporting original and significant research results that advance the field of photovoltaics (PV). The PV field is diverse in its science base ranging from semiconductor and PV device physics to optics and the materials sciences. The journal publishes articles that connect this science base to PV science and technology. The intent is to publish original research results that are of primary interest to the photovoltaic specialist. The scope of the IEEE J. Photovoltaics incorporates: fundamentals and new concepts of PV conversion, including those based on nanostructured materials, low-dimensional physics, multiple charge generation, up/down converters, thermophotovoltaics, hot-carrier effects, plasmonics, metamorphic materials, luminescent concentrators, and rectennas; Si-based PV, including new cell designs, crystalline and non-crystalline Si, passivation, characterization and Si crystal growth; polycrystalline, amorphous and crystalline thin-film solar cell materials, including PV structures and solar cells based on II-VI, chalcopyrite, Si and other thin film absorbers; III-V PV materials, heterostructures, multijunction devices and concentrator PV; optics for light trapping, reflection control and concentration; organic PV including polymer, hybrid and dye sensitized solar cells; space PV including cell materials and PV devices, defects and reliability, environmental effects and protective materials; PV modeling and characterization methods; and other aspects of PV, including modules, power conditioning, inverters, balance-of-systems components, monitoring, analyses and simulations, and supporting PV module standards and measurements. Tutorial and review papers on these subjects are also published and occasionally special issues are published to treat particular areas in more depth and breadth.
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