{"title":"Reducing Indium Consumption in Silicon Hetero Junction Solar Cells With TCO Stack Systems of ITO and AZO","authors":"Philipp Schmid;Winfried Wolke;Henning Nagel;Leonard Tutsch;Vasileios Georgiou-Sarlikiotis;Anamaria Steinmetz;Sebastian Pingel;Jochen Rentsch;Martin Hermle;Martin Bivour","doi":"10.1109/JPHOTOV.2023.3267175","DOIUrl":null,"url":null,"abstract":"This article reports on the reduction of indium consumption in bifacial rear emitter n-type silicon heterojunction (SHJ) solar cells by substituting the transparent conducting oxide (TCO) indium tin oxide (ITO) with aluminum doped zinc oxide (AZO). AZO, ITO, and stacks of both TCOs are sputtered at room temperature and 170 °C on both sides of SHJ solar cells and glass samples. The short circuit current density (\n<italic>J<sub>SC</sub></i>\n) of AZO SHJ cells is lower than that of ITO-based cells, possibly due to a smaller optical band gap \n<italic>E</i>\n<sub>G</sub>\n = 3.35 eV of AZO in contrast to \n<italic>E<sub>G</sub></i>\n = 3.71 eV for ITO, which could lead to stronger parasitic blue absorption for AZO cells. Series resistance \n<italic>R</i>\n<sub>S</sub>\n of pure AZO SHJ solar cells is high mainly due to high contact resistance \n<italic>R</i>\n<sub>C</sub>\n between silver (Ag) metallization and AZO and high \n<italic>R</i>\n<sub>C</sub>\n between amorphous silicon (a-Si) and the transparent AZO with low electron density \n<italic>n</i>\n<sub>e</sub>\n. Using ITO\n<sub>a-Si</sub>\n-AZO-ITO\n<sub>Ag</sub>\n stacks, which saves about 50% of ITO, enables \n<italic>R<sub>S</sub></i>\n values comparable to the ITO reference group, resulting in the same efficiency as the pure ITO cells. By replacing ITO\n<sub>a-Si</sub>\n with a high \n<italic>n<sub>e</sub></i>\n AZO\n<sub>a-Si</sub>\n the lowest \n<italic>R<sub>S</sub></i>\n is achieved. This AZO\n<sub>a-Si</sub>\n-AZO-ITO\n<sub>Ag</sub>\n structure saves about 70% ITO. Damp heat tests on cell and glass samples reveal a clear advantage of TCO stacks over AZO single layers.","PeriodicalId":445,"journal":{"name":"IEEE Journal of Photovoltaics","volume":"13 5","pages":"646-655"},"PeriodicalIF":2.5000,"publicationDate":"2023-08-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Journal of Photovoltaics","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10230869/","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENERGY & FUELS","Score":null,"Total":0}
引用次数: 0
Abstract
This article reports on the reduction of indium consumption in bifacial rear emitter n-type silicon heterojunction (SHJ) solar cells by substituting the transparent conducting oxide (TCO) indium tin oxide (ITO) with aluminum doped zinc oxide (AZO). AZO, ITO, and stacks of both TCOs are sputtered at room temperature and 170 °C on both sides of SHJ solar cells and glass samples. The short circuit current density (
JSC
) of AZO SHJ cells is lower than that of ITO-based cells, possibly due to a smaller optical band gap
E
G
= 3.35 eV of AZO in contrast to
EG
= 3.71 eV for ITO, which could lead to stronger parasitic blue absorption for AZO cells. Series resistance
R
S
of pure AZO SHJ solar cells is high mainly due to high contact resistance
R
C
between silver (Ag) metallization and AZO and high
R
C
between amorphous silicon (a-Si) and the transparent AZO with low electron density
n
e
. Using ITO
a-Si
-AZO-ITO
Ag
stacks, which saves about 50% of ITO, enables
RS
values comparable to the ITO reference group, resulting in the same efficiency as the pure ITO cells. By replacing ITO
a-Si
with a high
ne
AZO
a-Si
the lowest
RS
is achieved. This AZO
a-Si
-AZO-ITO
Ag
structure saves about 70% ITO. Damp heat tests on cell and glass samples reveal a clear advantage of TCO stacks over AZO single layers.
期刊介绍：
The IEEE Journal of Photovoltaics is a peer-reviewed, archival publication reporting original and significant research results that advance the field of photovoltaics (PV). The PV field is diverse in its science base ranging from semiconductor and PV device physics to optics and the materials sciences. The journal publishes articles that connect this science base to PV science and technology. The intent is to publish original research results that are of primary interest to the photovoltaic specialist. The scope of the IEEE J. Photovoltaics incorporates: fundamentals and new concepts of PV conversion, including those based on nanostructured materials, low-dimensional physics, multiple charge generation, up/down converters, thermophotovoltaics, hot-carrier effects, plasmonics, metamorphic materials, luminescent concentrators, and rectennas; Si-based PV, including new cell designs, crystalline and non-crystalline Si, passivation, characterization and Si crystal growth; polycrystalline, amorphous and crystalline thin-film solar cell materials, including PV structures and solar cells based on II-VI, chalcopyrite, Si and other thin film absorbers; III-V PV materials, heterostructures, multijunction devices and concentrator PV; optics for light trapping, reflection control and concentration; organic PV including polymer, hybrid and dye sensitized solar cells; space PV including cell materials and PV devices, defects and reliability, environmental effects and protective materials; PV modeling and characterization methods; and other aspects of PV, including modules, power conditioning, inverters, balance-of-systems components, monitoring, analyses and simulations, and supporting PV module standards and measurements. Tutorial and review papers on these subjects are also published and occasionally special issues are published to treat particular areas in more depth and breadth.
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