Sarmita Majumder, Karalee Jarvis, Sanjay K Banerjee, Karen L Kavanagh
{"title":"Interfacial reactions at Fe/topological insulator spin contacts.","authors":"Sarmita Majumder, Karalee Jarvis, Sanjay K Banerjee, Karen L Kavanagh","doi":"10.1116/1.4991331","DOIUrl":null,"url":null,"abstract":"<p><p>The authors study the composition and abruptness of the interfacial layers that form during deposition and patterning of a ferromagnet, Fe on a topological insulator (TI), Bi<sub>2</sub>Se<sub>3</sub>, Bi<sub>2</sub>Te<sub>3</sub>, and SiO<sub>x</sub>/Bi<sub>2</sub>Te<sub>3</sub>. Such structures are potentially useful for spintronics. Cross-sectional transmission electron microscopy, including interfacial elemental mapping, confirms that Fe reacts with Bi<sub>2</sub>Se<sub>3</sub> near room temperature, forming an abrupt 5 nm thick FeSe<sub>0.92</sub> single crystalline binary phase, predominantly (001) oriented, with lattice fringe spacing of 0.55 nm. In contrast, Fe/Bi<sub>2</sub>Te<sub>3</sub> forms a polycrystalline Fe/TI interfacial alloy that can be prevented by the addition of an evaporated SiO<sub>x</sub> separating Fe from the TI.</p>","PeriodicalId":38110,"journal":{"name":"Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics","volume":null,"pages":null},"PeriodicalIF":1.5000,"publicationDate":"2017-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1116/1.4991331","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics","FirstCategoryId":"5","ListUrlMain":"https://doi.org/10.1116/1.4991331","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"2017/7/6 0:00:00","PubModel":"Epub","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 5
Abstract
The authors study the composition and abruptness of the interfacial layers that form during deposition and patterning of a ferromagnet, Fe on a topological insulator (TI), Bi2Se3, Bi2Te3, and SiOx/Bi2Te3. Such structures are potentially useful for spintronics. Cross-sectional transmission electron microscopy, including interfacial elemental mapping, confirms that Fe reacts with Bi2Se3 near room temperature, forming an abrupt 5 nm thick FeSe0.92 single crystalline binary phase, predominantly (001) oriented, with lattice fringe spacing of 0.55 nm. In contrast, Fe/Bi2Te3 forms a polycrystalline Fe/TI interfacial alloy that can be prevented by the addition of an evaporated SiOx separating Fe from the TI.
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