{"title":"On the Impact of Bulk Lifetime on the Quantification of Recombination at the Surface of Semiconductors","authors":"Axel Herguth;Joshua Kamphues","doi":"10.1109/JPHOTOV.2023.3291453","DOIUrl":null,"url":null,"abstract":"Recombination of excess charge carriers in semiconductors occurring in emitter layers or at the interface to dielectric layers is typically assessed via injection-dependent lifetime measurements exploiting its specific injection dependence. A key assumption is that recombination in the bulk is negligible. Within this contribution it is shown in theory and experiment how neglected recombination in the bulk and its specific injection dependence can interfere with the correct assessment of surface passivation quality, in particular in the context of studies on lifetime degradation phenomena. The role of substrate doping, lifetime limitation by bulk defects and their specific properties is discussed.","PeriodicalId":445,"journal":{"name":"IEEE Journal of Photovoltaics","volume":"13 5","pages":"672-681"},"PeriodicalIF":2.5000,"publicationDate":"2023-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Journal of Photovoltaics","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10182390/","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENERGY & FUELS","Score":null,"Total":0}
引用次数: 1
Abstract
Recombination of excess charge carriers in semiconductors occurring in emitter layers or at the interface to dielectric layers is typically assessed via injection-dependent lifetime measurements exploiting its specific injection dependence. A key assumption is that recombination in the bulk is negligible. Within this contribution it is shown in theory and experiment how neglected recombination in the bulk and its specific injection dependence can interfere with the correct assessment of surface passivation quality, in particular in the context of studies on lifetime degradation phenomena. The role of substrate doping, lifetime limitation by bulk defects and their specific properties is discussed.
期刊介绍：
The IEEE Journal of Photovoltaics is a peer-reviewed, archival publication reporting original and significant research results that advance the field of photovoltaics (PV). The PV field is diverse in its science base ranging from semiconductor and PV device physics to optics and the materials sciences. The journal publishes articles that connect this science base to PV science and technology. The intent is to publish original research results that are of primary interest to the photovoltaic specialist. The scope of the IEEE J. Photovoltaics incorporates: fundamentals and new concepts of PV conversion, including those based on nanostructured materials, low-dimensional physics, multiple charge generation, up/down converters, thermophotovoltaics, hot-carrier effects, plasmonics, metamorphic materials, luminescent concentrators, and rectennas; Si-based PV, including new cell designs, crystalline and non-crystalline Si, passivation, characterization and Si crystal growth; polycrystalline, amorphous and crystalline thin-film solar cell materials, including PV structures and solar cells based on II-VI, chalcopyrite, Si and other thin film absorbers; III-V PV materials, heterostructures, multijunction devices and concentrator PV; optics for light trapping, reflection control and concentration; organic PV including polymer, hybrid and dye sensitized solar cells; space PV including cell materials and PV devices, defects and reliability, environmental effects and protective materials; PV modeling and characterization methods; and other aspects of PV, including modules, power conditioning, inverters, balance-of-systems components, monitoring, analyses and simulations, and supporting PV module standards and measurements. Tutorial and review papers on these subjects are also published and occasionally special issues are published to treat particular areas in more depth and breadth.
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