Estimating Past, Present, and Future Trends in the Global Distribution and Abundance of the Arbovirus Vector Aedes aegypti Under Climate Change Scenarios.

IF 4.3 3区 材料科学 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC ACS Applied Electronic Materials Pub Date : 2019-06-12 eCollection Date: 2019-01-01 DOI:10.3389/fpubh.2019.00148
Jing Liu-Helmersson, Åke Brännström, Maquins Odhiambo Sewe, Jan C Semenza, Joacim Rocklöv
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引用次数: 69

Abstract

Background: Aedes aegypti is the principal vector for several important arbovirus diseases, including dengue, chikungunya, yellow fever, and Zika. While recent empirical research has attempted to identify the current global distribution of the vector, the seasonal, and longer-term dynamics of the mosquito in response to trends in climate, population, and economic development over the twentieth and the twenty-first century remains to be elucidated. Methods: In this study, we use a process-based mathematical model to estimate global vector distribution and abundance. The model is based on the lifecycle of the vector and its dependence on climate, and the model sensitivity to socio-economic development is tested. Model parameters were generally empirically based, and the model was calibrated to global databases and time series of occurrence and abundance records. Climate data on temperature and rainfall were taken from CRU TS3.25 (1901-2015) and five global circulation models (CMIP5; 2006-2099) forced by a high-end (RCP8.5) and a low-end (RCP2.6) emission scenario. Socio-economic data on global GDP and human population density were from ISIMIP (1950-2099). Findings: The change in the potential of global abundance in A. aegypti over the last century up to today is estimated to be an increase of 9.5% globally and a further increase of 20 or 30% by the end of this century under a low compared to a high carbon emission future, respectively. The largest increase has occurred in the last two decades, indicating a tipping point in climate-driven global abundance which will be stabilized at the earliest in the mid-twenty-first century. The realized abundance is estimated to be sensitive to socioeconomic development. Interpretation: Our data indicate that climate change mitigation, i.e., following the Paris Agreement, could considerably help in suppressing risks of increased abundance and emergence of A. aegypti globally in the second half of the twenty-first century.

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估计气候变化情景下虫媒病毒媒介埃及伊蚊全球分布和丰度的过去、现在和未来趋势
背景:埃及伊蚊是几种重要虫媒病毒病的主要媒介,包括登革热、基孔肯雅热、黄热病和寨卡病毒。虽然最近的实证研究试图确定目前病媒的全球分布,但蚊子对20世纪和21世纪气候、人口和经济发展趋势的季节性和长期动态仍有待阐明。方法:在本研究中,我们使用基于过程的数学模型来估计全球矢量分布和丰度。该模型基于媒介的生命周期及其对气候的依赖,并测试了模型对社会经济发展的敏感性。模型参数一般以经验为基础,模型以全球数据库和发生度、丰度记录时间序列为基准进行校准。气候数据来源于CRU TS3.25(1901-2015)和5个全球环流模式(CMIP5;2006-2099年),由高端(RCP8.5)和低端(RCP2.6)排放情景所强迫。关于全球GDP和人口密度的社会经济数据来自ISIMIP(1950-2099)。研究结果:从上个世纪到今天,埃及伊蚊全球丰度潜力的变化估计为全球增加9.5%,到本世纪末,在低碳排放与高碳排放的未来情况下,将分别进一步增加20%或30%。最大的增长发生在过去二十年,这表明气候驱动的全球丰度将达到一个临界点,最早将在二十一世纪中叶稳定下来。据估计,已实现的丰度对社会经济发展很敏感。解释:我们的数据表明,气候变化减缓,即在《巴黎协定》之后,可以在很大程度上有助于抑制21世纪下半叶全球埃及伊蚊数量增加和出现的风险。
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来源期刊
CiteScore
7.20
自引率
4.30%
发文量
567
期刊介绍: ACS Applied Electronic Materials is an interdisciplinary journal publishing original research covering all aspects of electronic materials. The journal is devoted to reports of new and original experimental and theoretical research of an applied nature that integrate knowledge in the areas of materials science, engineering, optics, physics, and chemistry into important applications of electronic materials. Sample research topics that span the journal's scope are inorganic, organic, ionic and polymeric materials with properties that include conducting, semiconducting, superconducting, insulating, dielectric, magnetic, optoelectronic, piezoelectric, ferroelectric and thermoelectric. Indexed/​Abstracted: Web of Science SCIE Scopus CAS INSPEC Portico
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Issue Editorial Masthead Issue Publication Information Introducing the Inaugural Early Career Board Members in ACS Applied Electronic Materials Straightforward Synthesis of Borophene Nanolayers for Enhanced NO2 Detection in Humid Environments Growth Characteristics and Electronic Properties of Epitaxial NdNiO3 Thin Films by Atomic Layer Deposition
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