Plasma etching for fabrication of complex nanophotonic lasers from bonded InP semiconductor layers

IF 2.8 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Micro and Nano Engineering Pub Date : 2023-06-01 DOI:10.1016/j.mne.2023.100196
Jakub Dranczewski , Anna Fischer , Preksha Tiwari , Markus Scherrer , Dhruv Saxena , Heinz Schmid , Riccardo Sapienza , Kirsten Moselund
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引用次数: 1

Abstract

Integrating optically active III-V materials on silicon/insulator platforms is one potential path towards improving the energy efficiency and performance of modern computing. Here we demonstrate the applicability of direct wafer bonding combined with plasma etching to the fabrication of complex nanophotonic systems out of InP layers. We explore and optimise the plasma etching of InP, validating existing processes and developing improved ones. We explore the use of microdisk lasing as a way to evaluate fabrication fidelity, and demonstrate that we can create complex lasing systems of interest to us: coupled disk cavities and random network lasers.

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用等离子体刻蚀技术制备结合InP半导体层的复杂纳米光子激光器
在硅/绝缘体平台上集成光学活性III-V族材料是提高现代计算能效和性能的一条潜在途径。在这里,我们展示了直接晶片键合与等离子体蚀刻相结合在由InP层制造复杂纳米光子系统中的适用性。我们探索并优化InP的等离子体蚀刻,验证现有工艺并开发改进的工艺。我们探索使用微盘激光作为评估制造保真度的一种方法,并证明我们可以创建我们感兴趣的复杂激光系统:耦合盘腔和随机网络激光器。
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来源期刊
Micro and Nano Engineering
Micro and Nano Engineering Engineering-Electrical and Electronic Engineering
CiteScore
3.30
自引率
0.00%
发文量
67
审稿时长
80 days
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