Electron transport and scattering mechanisms in ferromagnetic monolayer Fe3GeTe2

IF 9.1 2区 材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY npj 2D Materials and Applications Pub Date : 2023-08-07 DOI:10.1038/s41699-023-00413-0
Danis I. Badrtdinov, Georgy V. Pushkarev, Mikhail I. Katsnelson, Alexander N. Rudenko
{"title":"Electron transport and scattering mechanisms in ferromagnetic monolayer Fe3GeTe2","authors":"Danis I. Badrtdinov, Georgy V. Pushkarev, Mikhail I. Katsnelson, Alexander N. Rudenko","doi":"10.1038/s41699-023-00413-0","DOIUrl":null,"url":null,"abstract":"We study intrinsic charge-carrier scattering mechanisms and determine their contribution to the transport properties of the two-dimensional ferromagnet Fe3GeTe2. We use state-of-the-art first-principles calculations combined with the model approaches to elucidate the role of the electron-phonon and electron-magnon interactions in the electronic transport. Our findings show that the charge carrier scattering in Fe3GeTe2 is dominated by the electron-phonon interaction, while the role of magnetic excitations is marginal. At the same time, the magnetic ordering is shown to effect essentially on the electron-phonon coupling and its temperature dependence. This leads to a sublinear temperature dependence of the electrical resistivity near the Curie temperature, which is in line with experimental observations. The room temperature resistivity is estimated to be ~ 35 μΩ ⋅ cm which may be considered as a lower intrinsic limit for monolayer Fe3GeTe2.","PeriodicalId":19227,"journal":{"name":"npj 2D Materials and Applications","volume":null,"pages":null},"PeriodicalIF":9.1000,"publicationDate":"2023-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.nature.com/articles/s41699-023-00413-0.pdf","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"npj 2D Materials and Applications","FirstCategoryId":"88","ListUrlMain":"https://www.nature.com/articles/s41699-023-00413-0","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 1

Abstract

We study intrinsic charge-carrier scattering mechanisms and determine their contribution to the transport properties of the two-dimensional ferromagnet Fe3GeTe2. We use state-of-the-art first-principles calculations combined with the model approaches to elucidate the role of the electron-phonon and electron-magnon interactions in the electronic transport. Our findings show that the charge carrier scattering in Fe3GeTe2 is dominated by the electron-phonon interaction, while the role of magnetic excitations is marginal. At the same time, the magnetic ordering is shown to effect essentially on the electron-phonon coupling and its temperature dependence. This leads to a sublinear temperature dependence of the electrical resistivity near the Curie temperature, which is in line with experimental observations. The room temperature resistivity is estimated to be ~ 35 μΩ ⋅ cm which may be considered as a lower intrinsic limit for monolayer Fe3GeTe2.

Abstract Image

Abstract Image

查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
铁磁单层Fe3GeTe2中的电子输运和散射机制
我们研究了本征电荷载流子散射机制,并确定了它们对二维铁磁体 Fe3GeTe2 传输特性的贡献。我们使用最先进的第一原理计算结合模型方法来阐明电子-声子和电子-磁子相互作用在电子传输中的作用。我们的研究结果表明,Fe3GeTe2 中的电荷载流子散射由电子-声子相互作用主导,而磁激发的作用则微不足道。同时,磁有序对电子-声子耦合及其温度依赖性也有重要影响。这导致电阻率在居里温度附近呈现亚线性温度依赖性,这与实验观测结果一致。室温电阻率估计为 ~ 35 μΩ ⋅ cm,这可视为单层 Fe3GeTe2 的内在下限。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
npj 2D Materials and Applications
npj 2D Materials and Applications Engineering-Mechanics of Materials
CiteScore
14.50
自引率
2.10%
发文量
80
审稿时长
15 weeks
期刊介绍: npj 2D Materials and Applications publishes papers on the fundamental behavior, synthesis, properties and applications of existing and emerging 2D materials. By selecting papers with the potential for impact, the journal aims to facilitate the transfer of the research of 2D materials into wide-ranging applications.
期刊最新文献
Light-driven electrodynamics and demagnetization in FenGeTe2 (n = 3, 5) thin films Achieving nearly barrier free transport in high mobility ReS2 phototransistors with van der Waals contacts Revealing polytypism in 2D boron nitride with UV photoluminescence 2D materials-based 3D integration for neuromorphic hardware Optical control of multiple resistance levels in graphene for memristic applications
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1