Microstructure and properties of ZnO-Bi2O3-based varistor ceramics via flash sintering

IF 0.7 4区工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC Microelectronics International Pub Date : 2022-08-16 DOI:10.1108/mi-05-2022-0079

Ming-Xun Jiang, Mengyang Shi, Jiamao Li, Juan Liu, Lei Zhang, Jianyu Qin, Yongtao Jiu, Bin Tang, Dong Xu

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Abstract

Purpose This paper aims to study the effects of MnO2 on the ZnO–Bi2O3-based varistor prepared via flash sintering (FS) Design/methodology/approach MnO2-doped ZnO–Bi2O3-based varistors were successfully prepared by the FS with a step-wise increase of the .current in 60 s at the furnace temperature <750°C under the direct current electric field of 300 V cm−1. The FS process, microstructure and the electrical performance of ZnO–Bi2O3-based varistors were systematically investigated. Findings The doping of MnO2 significantly decreased the onset temperature of FS and improved the electrical performance of FS ZnO varistor ceramic. The sample with 0.5 mol% MnO2 doping shows the highest improvement, with the nonlinear coefficient of 18, the leakage current of 16.82 µA, the threshold voltage of 459 V/mm and the dielectric constant of 1,221 at 1 kHz. Originality/value FS is a wonderful technology to enhance ZnO varistors for its low energy consumption, and a short sintering time can reduce grain growth and inhabit Bi2O3 volatilize, yet few research studies work on that. In this research, the authors analyzed the FS process and improved the electrical characteristics through MnO2 doping.

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闪速烧结ZnO-Bi2O3基压敏陶瓷的组织与性能

目的研究MnO2对闪速烧结（FS）制备的ZnO–Bi2O3基压敏电阻的影响。设计/方法/方法在60 在300的直流电场下，炉温<750°C时的s V cm−1。系统地研究了ZnO–Bi2O3基压敏电阻的FS工艺、微观结构和电学性能。结果MnO2的掺杂显著降低了FS的起始温度，改善了FS-ZnO压敏陶瓷的电学性能。0.5的样品 mol%MnO2掺杂表现出最高的改善，非线性系数为18，漏电流为16.82 µA，阈值电压459 V/mm，介电常数为1221 kHz。Originality/valueFS是一种很好的增强ZnO压敏电阻的技术，因为它能耗低，而且短的烧结时间可以减少晶粒生长并抑制Bi2O3的挥发，但很少有研究对此进行研究。在本研究中，作者分析了FS工艺，并通过掺杂MnO2改善了电学特性。

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来源期刊

Microelectronics International 工程技术-材料科学：综合

CiteScore

1.90

自引率

9.10%

发文量

审稿时长

>12 weeks

期刊介绍： Microelectronics International provides an authoritative, international and independent forum for the critical evaluation and dissemination of research and development, applications, processes and current practices relating to advanced packaging, micro-circuit engineering, interconnection, semiconductor technology and systems engineering. It represents a current, comprehensive and practical information tool. The Editor, Dr John Atkinson, welcomes contributions to the journal including technical papers, research papers, case studies and review papers for publication. Please view the Author Guidelines for further details. Microelectronics International comprises a multi-disciplinary study of the key technologies and related issues associated with the design, manufacture, assembly and various applications of miniaturized electronic devices and advanced packages. Among the broad range of topics covered are: • Advanced packaging • Ceramics • Chip attachment • Chip on board (COB) • Chip scale packaging • Flexible substrates • MEMS • Micro-circuit technology • Microelectronic materials • Multichip modules (MCMs) • Organic/polymer electronics • Printed electronics • Semiconductor technology • Solid state sensors • Thermal management • Thick/thin film technology • Wafer scale processing.