The purpose of this study is to adjust the electronic transport performance of zinc oxide–silicon dioxide (ZnO-SiO2) film by the construction of a grain boundary barrier.
Design/methodology/approach
ZnO-SiO2 thin films were prepared on glass substrates by a simple sol-gel method. The crystal structure of ZnO and ZnO-SiO2 powders were tested by X-ray diffraction with copper (Cu) Kα radiation. The absorption spectra of ZnO and ZnO-SiO2 films were recorded by a ultraviolet-visible spectrophotometer. The micro electrical transport performance of ZnO-SiO2 thin films were investigated by conductive atomic force microscope and electrostatic force microscope.
Findings
The results show that the current of ZnO-SiO2 film decrease, indicating that the mobility of ZnO-SiO2 film is greatly decreased, owing to the formation of the grain boundary barrier between ZnO and SiO2. The phase variation of ZnO-SiO2 film increases due to the electron accumulation at grain boundaries.
Originality/value
ZnO and ZnO-5SiO2 thin films prepared on glass substrates by a simple sol-gel method were first studied by CAFM and EFM. The band gaps of ZnO and ZnO-5SiO2 is ∼3.05 eV and 3.15 eV, respectively. The barrier height of ZnO-5SiO2 film increased by ∼0.015 eV after introducing SiO2. The phase variation intensity increased to a certain extent after doping SiO2, due to the increased GB barrier. ZnO-5SiO2 film will be a promising ETL candidate in the application of QLEDs field.
{"title":"Study of the electronic transport performance of ZnO-SiO2 film: the construction of grain boundary barrier","authors":"Yidong Zhang","doi":"10.1108/mi-02-2024-0029","DOIUrl":"https://doi.org/10.1108/mi-02-2024-0029","url":null,"abstract":"<h3>Purpose</h3>\u0000<p>The purpose of this study is to adjust the electronic transport performance of zinc oxide–silicon dioxide (ZnO-SiO<sub>2</sub>) film by the construction of a grain boundary barrier.</p><!--/ Abstract__block -->\u0000<h3>Design/methodology/approach</h3>\u0000<p>ZnO-SiO<sub>2</sub> thin films were prepared on glass substrates by a simple sol-gel method. The crystal structure of ZnO and ZnO-SiO<sub>2</sub> powders were tested by X-ray diffraction with copper (Cu) Kα radiation. The absorption spectra of ZnO and ZnO-SiO<sub>2</sub> films were recorded by a ultraviolet-visible spectrophotometer. The micro electrical transport performance of ZnO-SiO<sub>2</sub> thin films were investigated by conductive atomic force microscope and electrostatic force microscope.</p><!--/ Abstract__block -->\u0000<h3>Findings</h3>\u0000<p>The results show that the current of ZnO-SiO<sub>2</sub> film decrease, indicating that the mobility of ZnO-SiO<sub>2</sub> film is greatly decreased, owing to the formation of the grain boundary barrier between ZnO and SiO<sub>2</sub>. The phase variation of ZnO-SiO<sub>2</sub> film increases due to the electron accumulation at grain boundaries.</p><!--/ Abstract__block -->\u0000<h3>Originality/value</h3>\u0000<p>ZnO and ZnO-5SiO<sub>2</sub> thin films prepared on glass substrates by a simple sol-gel method were first studied by CAFM and EFM. The band gaps of ZnO and ZnO-5SiO<sub>2</sub> is ∼3.05 eV and 3.15 eV, respectively. The barrier height of ZnO-5SiO<sub>2</sub> film increased by ∼0.015 eV after introducing SiO<sub>2</sub>. The phase variation intensity increased to a certain extent after doping SiO<sub>2</sub>, due to the increased GB barrier. ZnO-5SiO<sub>2</sub> film will be a promising ETL candidate in the application of QLEDs field.</p><!--/ Abstract__block -->","PeriodicalId":49817,"journal":{"name":"Microelectronics International","volume":"20 1","pages":""},"PeriodicalIF":1.1,"publicationDate":"2024-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141567680","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Muhammad Hakeem Mohammad Nazri, Tan Chou Yong, Farazila B. Yusof, Gregory Soon How Thien, Chan Kah Yoong, Yap Boon Kar
Purpose
Die edge quality with its corresponding die strength are two important factors for excellent dicing quality especially for low-k wafers due to their weak mechanical properties and fragile structures. It is shown in past literatures that laser dicing or grooving does yield good dicing quality with the elimination of die mechanical properties. This is due to the excess heat energy that the die absorbs throughout the procedure. Within the internal structure, the mechanical properties of low-k wafers can be further enhanced by modification of the material. The purpose of this paper is to strengthen the mechanical properties of wafers through the heat-treatment process.
Design/methodology/approach
The methodology of this approach is by heat treating several low-k wafers that are scribed with different laser energy densities with different laser micromachining parameters, i.e. laser power, frequency, feed speed, defocus reading and single/multibeam setup. An Nd:YAG ultraviolet laser diode that is operating at 355 nm wavelength was used in this study. The die responses from each wafer are thoroughly visually inspected to identify any topside chipping and peeling. The laser grooving profile shape and deepest depth are analysed using a laser profiler, while the sidewalls are characterized by scanning electron microscopy (SEM) to detect cracks and voids. The mechanical strength of each wafer types then undergoes three-point bending test, and the performance data is analyzed using Weibull plot.
Findings
The result from the experiment shows that the standard wafers are most susceptible to physical defects as compared to the heat-treated wafers. There is improvement for heat-treated wafers in terms of die structural integrity and die strength performance, which revealed a 6% increase in single beam data group for wafers that is processed using high energy density laser output but remains the same for other laser grooving settings. Whereas for multibeam data group, all heat-treated wafer with different laser settings receives a slight increase at 4% in die strength.
Originality/value
Heat-treatment process can yield improved mechanical properties for laser grooved low-k wafers and thus provide better product reliability.
目的 晶片边缘质量及其相应的晶片强度是保证出色切割质量的两个重要因素，特别是对于低 k 值晶片，因为它们的机械性能较弱，结构脆弱。过去的文献表明，激光切割或开槽在消除晶片机械性能的同时，也能获得良好的切割质量。这是由于切割过程中芯片吸收了过多的热能。在内部结构中，低 k 值晶片的机械性能可以通过改性材料得到进一步提高。本文的目的是通过热处理工艺来增强晶片的机械性能。本方法是通过不同的激光微机械加工参数，即激光功率、频率、进给速度、散焦读数和单/多光束设置，对多个用不同激光能量密度刻划的低 k 值晶片进行热处理。本研究使用了波长为 355 nm 的 Nd:YAG 紫外激光二极管。对每个晶片上的晶粒反应进行彻底的目视检查，以确定是否有任何顶部崩裂和剥落。使用激光轮廓仪分析激光开槽的轮廓形状和最深深度，同时使用扫描电子显微镜（SEM）对侧壁进行表征，以检测裂纹和空隙。实验结果表明，与热处理晶片相比，标准晶片最容易出现物理缺陷。热处理晶片在晶粒结构完整性和晶粒强度性能方面有所改善，这表明使用高能量密度激光输出加工的晶片的单光束数据组增加了 6%，但其他激光开槽设置保持不变。而在多光束数据组中，采用不同激光设置的所有热处理晶片的晶片强度都略微提高了 4%。 原创性/价值 热处理工艺可以改善激光开槽低 K 值晶片的机械性能，从而提供更好的产品可靠性。
{"title":"3-pass and 5-pass laser grooving & die strength characterization for reinforced internal low-k 55nm node wafer structure via heat-treatment process","authors":"Muhammad Hakeem Mohammad Nazri, Tan Chou Yong, Farazila B. Yusof, Gregory Soon How Thien, Chan Kah Yoong, Yap Boon Kar","doi":"10.1108/mi-08-2022-0145","DOIUrl":"https://doi.org/10.1108/mi-08-2022-0145","url":null,"abstract":"<h3>Purpose</h3>\u0000<p>Die edge quality with its corresponding die strength are two important factors for excellent dicing quality especially for low-k wafers due to their weak mechanical properties and fragile structures. It is shown in past literatures that laser dicing or grooving does yield good dicing quality with the elimination of die mechanical properties. This is due to the excess heat energy that the die absorbs throughout the procedure. Within the internal structure, the mechanical properties of low-k wafers can be further enhanced by modification of the material. The purpose of this paper is to strengthen the mechanical properties of wafers through the heat-treatment process.</p><!--/ Abstract__block -->\u0000<h3>Design/methodology/approach</h3>\u0000<p>The methodology of this approach is by heat treating several low-k wafers that are scribed with different laser energy densities with different laser micromachining parameters, i.e. laser power, frequency, feed speed, defocus reading and single/multibeam setup. An Nd:YAG ultraviolet laser diode that is operating at 355 nm wavelength was used in this study. The die responses from each wafer are thoroughly visually inspected to identify any topside chipping and peeling. The laser grooving profile shape and deepest depth are analysed using a laser profiler, while the sidewalls are characterized by scanning electron microscopy (SEM) to detect cracks and voids. The mechanical strength of each wafer types then undergoes three-point bending test, and the performance data is analyzed using Weibull plot.</p><!--/ Abstract__block -->\u0000<h3>Findings</h3>\u0000<p>The result from the experiment shows that the standard wafers are most susceptible to physical defects as compared to the heat-treated wafers. There is improvement for heat-treated wafers in terms of die structural integrity and die strength performance, which revealed a 6% increase in single beam data group for wafers that is processed using high energy density laser output but remains the same for other laser grooving settings. Whereas for multibeam data group, all heat-treated wafer with different laser settings receives a slight increase at 4% in die strength.</p><!--/ Abstract__block -->\u0000<h3>Originality/value</h3>\u0000<p>Heat-treatment process can yield improved mechanical properties for laser grooved low-k wafers and thus provide better product reliability.</p><!--/ Abstract__block -->","PeriodicalId":49817,"journal":{"name":"Microelectronics International","volume":"23 1","pages":""},"PeriodicalIF":1.1,"publicationDate":"2024-05-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141189813","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Rilwan Kayode Apalowo, Mohamad Aizat Abas, Zuraihana Bachok, Mohamad Fikri Mohd Sharif, Fakhrozi Che Ani, Mohamad Riduwan Ramli, Muhamed Abdul Fatah bin Muhamed Mukhtar
Purpose
This study aims to investigate the possible defects and their root causes in a soft-termination multilayered ceramic capacitor (MLCC) when subjected to a thermal reflow process.
Design/methodology/approach
Specimens of the capacitor assembly were subjected to JEDEC level 1 preconditioning (85 °C/85%RH/168 h) with 5× reflow at 270°C peak temperature. Then, they were inspected using a 2 µm scanning electron microscope to investigate the evidence of defects. The reliability test was also numerically simulated and analyzed using the extended finite element method implemented in ABAQUS.
Findings
Excellent agreements were observed between the SEM inspections and the simulation results. The findings showed evidence of discontinuities along the Cu and the Cu-epoxy layers and interfacial delamination crack at the Cu/Cu-epoxy interface. The possible root causes are thermal mismatch between the Cu and Cu-epoxy layers, moisture contamination and weak Cu/Cu-epoxy interface. The maximum crack length observed in the experimentally reflowed capacitor was measured as 75 µm, a 2.59% difference compared to the numerical prediction of 77.2 µm.
Practical implications
This work's contribution is expected to reduce the additional manufacturing cost and lead time in investigating reliability issues in MLCCs.
Originality/value
Despite the significant number of works on the reliability assessment of surface mount capacitors, work on crack growth in soft-termination MLCC is limited. Also, the combined experimental and numerical investigation of reflow-induced reliability issues in soft-termination MLCC is limited. These cited gaps are the novelties of this study.
{"title":"Deformation and crack growth in multilayered ceramic capacitor during thermal reflow process: numerical and experimental investigation","authors":"Rilwan Kayode Apalowo, Mohamad Aizat Abas, Zuraihana Bachok, Mohamad Fikri Mohd Sharif, Fakhrozi Che Ani, Mohamad Riduwan Ramli, Muhamed Abdul Fatah bin Muhamed Mukhtar","doi":"10.1108/mi-03-2023-0025","DOIUrl":"https://doi.org/10.1108/mi-03-2023-0025","url":null,"abstract":"<h3>Purpose</h3>\u0000<p>This study aims to investigate the possible defects and their root causes in a soft-termination multilayered ceramic capacitor (MLCC) when subjected to a thermal reflow process.</p><!--/ Abstract__block -->\u0000<h3>Design/methodology/approach</h3>\u0000<p>Specimens of the capacitor assembly were subjected to JEDEC level 1 preconditioning (85 °C/85%RH/168 h) with 5× reflow at 270°C peak temperature. Then, they were inspected using a 2 µm scanning electron microscope to investigate the evidence of defects. The reliability test was also numerically simulated and analyzed using the extended finite element method implemented in ABAQUS.</p><!--/ Abstract__block -->\u0000<h3>Findings</h3>\u0000<p>Excellent agreements were observed between the SEM inspections and the simulation results. The findings showed evidence of discontinuities along the Cu and the Cu-epoxy layers and interfacial delamination crack at the Cu/Cu-epoxy interface. The possible root causes are thermal mismatch between the Cu and Cu-epoxy layers, moisture contamination and weak Cu/Cu-epoxy interface. The maximum crack length observed in the experimentally reflowed capacitor was measured as 75 µm, a 2.59% difference compared to the numerical prediction of 77.2 µm.</p><!--/ Abstract__block -->\u0000<h3>Practical implications</h3>\u0000<p>This work's contribution is expected to reduce the additional manufacturing cost and lead time in investigating reliability issues in MLCCs.</p><!--/ Abstract__block -->\u0000<h3>Originality/value</h3>\u0000<p>Despite the significant number of works on the reliability assessment of surface mount capacitors, work on crack growth in soft-termination MLCC is limited. Also, the combined experimental and numerical investigation of reflow-induced reliability issues in soft-termination MLCC is limited. These cited gaps are the novelties of this study.</p><!--/ Abstract__block -->","PeriodicalId":49817,"journal":{"name":"Microelectronics International","volume":"202 1","pages":""},"PeriodicalIF":1.1,"publicationDate":"2024-04-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140570407","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Amer Mecellem, Soufyane Belhenini, Douaa Khelladi, Caroline Richard
Purpose
The purpose of this study is to propose a simplifying approach for modelling a reliability test. Modelling the reliability tests of printed circuit board (PCB)/microelectronic component assemblies requires the adoption of several simplifying assumptions. This study introduces and validates simplified assumptions for modeling a four-point bend test on a PCB/wafer-level chip scale packaging assembly.
Design/methodology/approach
In this study, simplifying assumptions were used. These involved substituting dynamic imposed displacement loading with an equivalent static loading, replacing the spherical shape of the interconnections with simplified shapes (cylindrical and cubic) and transitioning from a three-dimensional modelling approach to an equivalent two-dimensional model. The validity of these simplifications was confirmed through both quantitative and qualitative comparisons of the numerical results obtained. The maximum principal plastic strain in the solder balls and copper pads served as the criteria for comparison.
Findings
The simplified hypotheses were validated through quantitative and qualitative comparisons of the results from various models. Consequently, it was determined that the replacement of dynamic loading with equivalent static loading had no significant impact on the results. Similarly, substituting the spherical shape of interconnections with an equivalent shape and transitioning from a three-dimensional approach to a two-dimensional one did not substantially affect the precision of the obtained results.
Originality/value
This study serves as a valuable resource for researchers seeking to model accelerated reliability tests, particularly in the context of four-point bending tests. The results obtained in this study will assist other researchers in streamlining their numerical models, thereby reducing calculation costs through the utilization of the simplified hypotheses introduced and validated herein.
{"title":"Simplifying finite elements analysis of four-point bending tests for flip chip microcomponents","authors":"Amer Mecellem, Soufyane Belhenini, Douaa Khelladi, Caroline Richard","doi":"10.1108/mi-01-2024-0026","DOIUrl":"https://doi.org/10.1108/mi-01-2024-0026","url":null,"abstract":"<h3>Purpose</h3>\u0000<p>The purpose of this study is to propose a simplifying approach for modelling a reliability test. Modelling the reliability tests of printed circuit board (PCB)/microelectronic component assemblies requires the adoption of several simplifying assumptions. This study introduces and validates simplified assumptions for modeling a four-point bend test on a PCB/wafer-level chip scale packaging assembly.</p><!--/ Abstract__block -->\u0000<h3>Design/methodology/approach</h3>\u0000<p>In this study, simplifying assumptions were used. These involved substituting dynamic imposed displacement loading with an equivalent static loading, replacing the spherical shape of the interconnections with simplified shapes (cylindrical and cubic) and transitioning from a three-dimensional modelling approach to an equivalent two-dimensional model. The validity of these simplifications was confirmed through both quantitative and qualitative comparisons of the numerical results obtained. The maximum principal plastic strain in the solder balls and copper pads served as the criteria for comparison.</p><!--/ Abstract__block -->\u0000<h3>Findings</h3>\u0000<p>The simplified hypotheses were validated through quantitative and qualitative comparisons of the results from various models. Consequently, it was determined that the replacement of dynamic loading with equivalent static loading had no significant impact on the results. Similarly, substituting the spherical shape of interconnections with an equivalent shape and transitioning from a three-dimensional approach to a two-dimensional one did not substantially affect the precision of the obtained results.</p><!--/ Abstract__block -->\u0000<h3>Originality/value</h3>\u0000<p>This study serves as a valuable resource for researchers seeking to model accelerated reliability tests, particularly in the context of four-point bending tests. The results obtained in this study will assist other researchers in streamlining their numerical models, thereby reducing calculation costs through the utilization of the simplified hypotheses introduced and validated herein.</p><!--/ Abstract__block -->","PeriodicalId":49817,"journal":{"name":"Microelectronics International","volume":"3 1","pages":""},"PeriodicalIF":1.1,"publicationDate":"2024-04-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140570486","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
<h3>Purpose</h3> <p>This paper aims to present the simulation, fabrication and testing of a novel ultra-wide band (UWB) band-pass filters (BPFs) with better transmission and rejection characteristics on a low-loss Taconic substrate and analyze using the coupled theory of resonators for UWB range covering L, S, C and X bands for radars, global positioning system (GPS) and satellite communication applications.</p><!--/ Abstract__block --> <h3>Design/methodology/approach</h3> <p>The filter is designed with a bent coupled transmission line on the top copper layer. Defected ground structures (DGSs) like complementary split ring resonators (CSRRs), V-shaped resonators, rectangular slots and quad circle slots (positioned inwards and outwards) are etched in the ground layer of the filter. The circular orientation of V-shaped resonators adds compactness when linearly placed. By arranging the quad circle slots outwards and inwards at the corner and core of the ground plane, respectively, two filters (Filters I and II) are designed, fabricated and measured. These two filters feature a quasi-elliptic response with transmission zeros (TZs) on either side of the bandpass response, making it highly selective and reflection poles (RPs), resulting in a low-loss filter response. The transmission line model and coupled line theory are implemented to analyze the proposed filters.</p><!--/ Abstract__block --> <h3>Findings</h3> <p>Two filters by placing the quad circle slots outwards (Filter I) and inwards (Filter II) were designed, fabricated and tested. The fabricated model (Filter I) provides transmission with a maximum insertion loss of 2.65 dB from 1.5 GHz to 9.2 GHz. Four TZs and five RPs are observed in the frequency response. The lower and upper stopband band width (BW) of the measured Filter I are 1.2 GHz and 5.5 GHz of upper stopband BW with rejection level greater than 10 dB, respectively. Filter II (inward quad circle slots) operates from 1.4 GHz to 9.05 GHz with 1.65 dB maximum insertion loss inside the passband with four TZs and four RPs, which, in turn, enhances the filter characteristics in terms of selectivity, flatness and stopband. Moreover, 1 GHz BW of lower and upper stopbands are observed. Thus, the fabricated filters (Filters I and II) are therefore evaluated, and the outcomes show good agreement with the electromagnetic simulation response.</p><!--/ Abstract__block --> <h3>Research limitations/implications</h3> <p>The limitation of this work is the back radiation caused by DGS, which can be eradicated by placing the filter in the cavity and retaining its performance.</p><!--/ Abstract__block --> <h3>Practical implications</h3> <p>The proposed UWB BPFs with novel resonators find their role in the UWB range covering L, S, C and X bands for radars, GPS and satellite communication applications.</p><!--/ Abstract__block --> <h3>Originality/value</h3> <p>To the best of the authors’ knowledge, for the first time, the authors develop a compact UWB BPFs
{"title":"Quasi-elliptic band pass filter using resonators based on coupling theory for ultra-wide band applications","authors":"Divya Shree M., Srinivasa Rao Inabathini","doi":"10.1108/mi-07-2023-0106","DOIUrl":"https://doi.org/10.1108/mi-07-2023-0106","url":null,"abstract":"<h3>Purpose</h3>\u0000<p>This paper aims to present the simulation, fabrication and testing of a novel ultra-wide band (UWB) band-pass filters (BPFs) with better transmission and rejection characteristics on a low-loss Taconic substrate and analyze using the coupled theory of resonators for UWB range covering L, S, C and X bands for radars, global positioning system (GPS) and satellite communication applications.</p><!--/ Abstract__block -->\u0000<h3>Design/methodology/approach</h3>\u0000<p>The filter is designed with a bent coupled transmission line on the top copper layer. Defected ground structures (DGSs) like complementary split ring resonators (CSRRs), V-shaped resonators, rectangular slots and quad circle slots (positioned inwards and outwards) are etched in the ground layer of the filter. The circular orientation of V-shaped resonators adds compactness when linearly placed. By arranging the quad circle slots outwards and inwards at the corner and core of the ground plane, respectively, two filters (Filters I and II) are designed, fabricated and measured. These two filters feature a quasi-elliptic response with transmission zeros (TZs) on either side of the bandpass response, making it highly selective and reflection poles (RPs), resulting in a low-loss filter response. The transmission line model and coupled line theory are implemented to analyze the proposed filters.</p><!--/ Abstract__block -->\u0000<h3>Findings</h3>\u0000<p>Two filters by placing the quad circle slots outwards (Filter I) and inwards (Filter II) were designed, fabricated and tested. The fabricated model (Filter I) provides transmission with a maximum insertion loss of 2.65 dB from 1.5 GHz to 9.2 GHz. Four TZs and five RPs are observed in the frequency response. The lower and upper stopband band width (BW) of the measured Filter I are 1.2 GHz and 5.5 GHz of upper stopband BW with rejection level greater than 10 dB, respectively. Filter II (inward quad circle slots) operates from 1.4 GHz to 9.05 GHz with 1.65 dB maximum insertion loss inside the passband with four TZs and four RPs, which, in turn, enhances the filter characteristics in terms of selectivity, flatness and stopband. Moreover, 1 GHz BW of lower and upper stopbands are observed. Thus, the fabricated filters (Filters I and II) are therefore evaluated, and the outcomes show good agreement with the electromagnetic simulation response.</p><!--/ Abstract__block -->\u0000<h3>Research limitations/implications</h3>\u0000<p>The limitation of this work is the back radiation caused by DGS, which can be eradicated by placing the filter in the cavity and retaining its performance.</p><!--/ Abstract__block -->\u0000<h3>Practical implications</h3>\u0000<p>The proposed UWB BPFs with novel resonators find their role in the UWB range covering L, S, C and X bands for radars, GPS and satellite communication applications.</p><!--/ Abstract__block -->\u0000<h3>Originality/value</h3>\u0000<p>To the best of the authors’ knowledge, for the first time, the authors develop a compact UWB BPFs","PeriodicalId":49817,"journal":{"name":"Microelectronics International","volume":"175 1","pages":""},"PeriodicalIF":1.1,"publicationDate":"2024-01-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139083898","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Purpose This paper aims to propose a two-element dual fed ultra-wideband (UWB) multiple input multiple output (MIMO) antenna system with no additional decoupling structures. The antenna operates from 3.1 to 10.6 GHz. The antenna finds its usage in on-body wearable device applications. Design/methodology/approach The antenna system measures 63.80 × 29.80 × 0.7 mm. The antenna radiating element is designed by using a modified dumbbell-shaped structure. Jean cloth material is used as substrate. The isolation improvement is achieved through spacing between two elements. Findings The proposed antenna has a very low mutual coupling of S 21 < −20 dB and impedance matching of S 11 < −10 dB. The radiation characteristics are stable in the antenna operating region. It provides as ECC < 0.01, diversity gain >9.9 dB. The antenna offers low average specific absorption rate (SAR) of 0.169 W/kg. The simulated and measured results are found to be in reasonable match. Originality/value The MIMO antenna is proposed for on-body communication, hence, a very thin jean cloth material is used as substrate. This negates the necessity of additional material usage in antenna design and the result range indicates good diversity performance and with a low SAR of 0.169 W/kg for on-body performance. This makes it a suitable candidate for textile antenna application.
{"title":"Design of UWB MIMO antenna using lean wearable textile substrate for reduced SAR","authors":"Sasireka Perumalsamy, Kavya G., Rajkumar S.","doi":"10.1108/mi-08-2023-0176","DOIUrl":"https://doi.org/10.1108/mi-08-2023-0176","url":null,"abstract":"Purpose This paper aims to propose a two-element dual fed ultra-wideband (UWB) multiple input multiple output (MIMO) antenna system with no additional decoupling structures. The antenna operates from 3.1 to 10.6 GHz. The antenna finds its usage in on-body wearable device applications. Design/methodology/approach The antenna system measures 63.80 × 29.80 × 0.7 mm. The antenna radiating element is designed by using a modified dumbbell-shaped structure. Jean cloth material is used as substrate. The isolation improvement is achieved through spacing between two elements. Findings The proposed antenna has a very low mutual coupling of S 21 < −20 dB and impedance matching of S 11 < −10 dB. The radiation characteristics are stable in the antenna operating region. It provides as ECC < 0.01, diversity gain >9.9 dB. The antenna offers low average specific absorption rate (SAR) of 0.169 W/kg. The simulated and measured results are found to be in reasonable match. Originality/value The MIMO antenna is proposed for on-body communication, hence, a very thin jean cloth material is used as substrate. This negates the necessity of additional material usage in antenna design and the result range indicates good diversity performance and with a low SAR of 0.169 W/kg for on-body performance. This makes it a suitable candidate for textile antenna application.","PeriodicalId":49817,"journal":{"name":"Microelectronics International","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135962949","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Purpose The purpose of this paper is to illustrate the new technical demands and reliability challenges to printed circuit board (PCB) designs, materials and processes when the transmission frequency increases from Sub-6 GHz in previous generations to millimeter (mm) wave in fifth-generation (5G) communication technology. Design/methodology/approach The approach involves theoretical analysis and actual case study by various characterization techniques, such as a stereo microscope, metallographic microscope, scanning electron microscope, energy dispersive spectroscopy, focused ion beam, high-frequency structure simulator, stripline resonator and mechanical test. Findings To meet PCB signal integrity demands in mm-wave frequency bands, the improving proposals on copper profile, resin system, reinforcement fabric, filler, electromagnetic interference-reducing design, transmission line as well as via layout, surface treatment, drilling, desmear, laminating and electroplating were discussed. And the failure causes and effects of typical reliability issues, including complex permittivity fluctuation at different frequencies or environments, weakening of peel strength, conductive anodic filament, crack on microvias, the effect of solder joint void on signal transmission performance and soldering anomalies at ball grid array location on high-speed PCBs, were demonstrated. Originality/value The PCB reliability problem is the leading factor to cause failures of PCB assemblies concluded from statistical results on the failure cases sent to our laboratory. The PCB reliability level is very essential to guarantee the reliability of the entire equipment. In this paper, the summarized technical demands and reliability issues that are rarely reported in existing articles were discussed systematically with new perspectives, which will be very critical to identify potential reliability risks for PCB in 5G mm-wave applications and implement targeted improvements.
{"title":"Investigation on the new reliability issues of PCB in 5G millimeter wave application","authors":"Xiao He, Lijuan Huang, Meizhen Xiao, Chengyong Yu, En Li, Weiheng Shao","doi":"10.1108/mi-01-2023-0001","DOIUrl":"https://doi.org/10.1108/mi-01-2023-0001","url":null,"abstract":"Purpose The purpose of this paper is to illustrate the new technical demands and reliability challenges to printed circuit board (PCB) designs, materials and processes when the transmission frequency increases from Sub-6 GHz in previous generations to millimeter (mm) wave in fifth-generation (5G) communication technology. Design/methodology/approach The approach involves theoretical analysis and actual case study by various characterization techniques, such as a stereo microscope, metallographic microscope, scanning electron microscope, energy dispersive spectroscopy, focused ion beam, high-frequency structure simulator, stripline resonator and mechanical test. Findings To meet PCB signal integrity demands in mm-wave frequency bands, the improving proposals on copper profile, resin system, reinforcement fabric, filler, electromagnetic interference-reducing design, transmission line as well as via layout, surface treatment, drilling, desmear, laminating and electroplating were discussed. And the failure causes and effects of typical reliability issues, including complex permittivity fluctuation at different frequencies or environments, weakening of peel strength, conductive anodic filament, crack on microvias, the effect of solder joint void on signal transmission performance and soldering anomalies at ball grid array location on high-speed PCBs, were demonstrated. Originality/value The PCB reliability problem is the leading factor to cause failures of PCB assemblies concluded from statistical results on the failure cases sent to our laboratory. The PCB reliability level is very essential to guarantee the reliability of the entire equipment. In this paper, the summarized technical demands and reliability issues that are rarely reported in existing articles were discussed systematically with new perspectives, which will be very critical to identify potential reliability risks for PCB in 5G mm-wave applications and implement targeted improvements.","PeriodicalId":49817,"journal":{"name":"Microelectronics International","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"136292759","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Purpose This paper aims to compare and evaluate the influence of package designs and characteristics on the mechanical reliability of electronic assemblies when subjected to harmonic vibrations. Design/methodology/approach Using finite element analysis (FEA), the effect of package design-related parameters, including the interconnect array configuration, i.e. full vs perimeter, and package size, on solder mechanical stresses are fully addressed. Findings The results of FEA simulations revealed that the number of solder rows or columns available in the array, could significantly affect solder stresses. In addition, smaller packages result in lower solder stresses and differing distributions. Originality/value In literature, there are no papers that discuss the effect of solder array layout on electronic packages vibration reliability. In addition, general rules for designing electronic assemblies subjected to harmonic vibration loadings are proposed in this paper.
{"title":"A numerical investigation on the influence of full vs perimeter arrays on the mechanical reliability of electronic assemblies under vibration","authors":"Mohammad A. Gharaibeh","doi":"10.1108/mi-02-2023-0014","DOIUrl":"https://doi.org/10.1108/mi-02-2023-0014","url":null,"abstract":"\u0000Purpose\u0000This paper aims to compare and evaluate the influence of package designs and characteristics on the mechanical reliability of electronic assemblies when subjected to harmonic vibrations.\u0000\u0000\u0000Design/methodology/approach\u0000Using finite element analysis (FEA), the effect of package design-related parameters, including the interconnect array configuration, i.e. full vs perimeter, and package size, on solder mechanical stresses are fully addressed.\u0000\u0000\u0000Findings\u0000The results of FEA simulations revealed that the number of solder rows or columns available in the array, could significantly affect solder stresses. In addition, smaller packages result in lower solder stresses and differing distributions.\u0000\u0000\u0000Originality/value\u0000In literature, there are no papers that discuss the effect of solder array layout on electronic packages vibration reliability. In addition, general rules for designing electronic assemblies subjected to harmonic vibration loadings are proposed in this paper.\u0000","PeriodicalId":49817,"journal":{"name":"Microelectronics International","volume":" ","pages":""},"PeriodicalIF":1.1,"publicationDate":"2023-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"41397820","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Purpose Compact and wideband antennas are the need of modern wireless systems that preferably work with compact, low-profile and easy-to-install devices that provide a wider coverage of operating frequencies. The purpose of this paper is to propose a novel compact and ultrawideband (UWB) microstrip patch antenna intended for high frequency wireless applications. Design/methodology/approach A square microstrip patch antenna was initially modeled on finite element method-based electromagnetic simulation tool high frequency structure simulator. It was then loaded with a rectangular slit and Koch snowflake-shaped fractal notches for bandwidth enhancement. The fabricated prototype was tested by using vector network analyzer from Agilent Technologies, N5247A, Santa Clara, California, United States (US). Findings The designed Koch fractal patch antenna is highly compact with dimensions of 10 × 10 mm only and possesses UWB characteristics with multiple resonances in the operating band. The −10 dB measured impedance bandwidth was observed to be approximately 13.65 GHz in the frequency range (23.20–36.85 GHz). Originality/value Owing to its simple and compact structure, positive and substantial gain values, high radiation efficiency and stable radiation patterns throughout the frequency band of interest, the proposed antenna is a suitable candidate for high frequency wireless applications in the K (18–27 GHz) and Ka (26.5–40 GHz) microwave bands.
{"title":"An ultrawideband Koch fractal patch antenna","authors":"Iqra Masroor, J. A. Ansari","doi":"10.1108/mi-12-2022-0201","DOIUrl":"https://doi.org/10.1108/mi-12-2022-0201","url":null,"abstract":"\u0000Purpose\u0000Compact and wideband antennas are the need of modern wireless systems that preferably work with compact, low-profile and easy-to-install devices that provide a wider coverage of operating frequencies. The purpose of this paper is to propose a novel compact and ultrawideband (UWB) microstrip patch antenna intended for high frequency wireless applications.\u0000\u0000\u0000Design/methodology/approach\u0000A square microstrip patch antenna was initially modeled on finite element method-based electromagnetic simulation tool high frequency structure simulator. It was then loaded with a rectangular slit and Koch snowflake-shaped fractal notches for bandwidth enhancement. The fabricated prototype was tested by using vector network analyzer from Agilent Technologies, N5247A, Santa Clara, California, United States (US).\u0000\u0000\u0000Findings\u0000The designed Koch fractal patch antenna is highly compact with dimensions of 10 × 10 mm only and possesses UWB characteristics with multiple resonances in the operating band. The −10 dB measured impedance bandwidth was observed to be approximately 13.65 GHz in the frequency range (23.20–36.85 GHz).\u0000\u0000\u0000Originality/value\u0000Owing to its simple and compact structure, positive and substantial gain values, high radiation efficiency and stable radiation patterns throughout the frequency band of interest, the proposed antenna is a suitable candidate for high frequency wireless applications in the K (18–27 GHz) and Ka (26.5–40 GHz) microwave bands.\u0000","PeriodicalId":49817,"journal":{"name":"Microelectronics International","volume":" ","pages":""},"PeriodicalIF":1.1,"publicationDate":"2023-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"47908390","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Power electronic converters are widely used to power miniaturized electronic devices in many important applications, such as communication base stations, data centers, wearable devices, smart homes and energy harvesting. However, power electronic converters are often affected by mechanical, electrical and thermal stresses, which contributes to increased equipment failures. Considering failed components may cause unexpected interruptions and serious safety issues, it is becoming even more important to improve the reliability of power electronic components and circuits. The call for paper of the Special Issue on Emerging Technologies for Highly-Reliable Power Electronic Systems in Miniaturized Electronic Devices was published in May 2022. We received eight submissions in total. Reviews were promptly organized by Guest Editors fromChina and Europe. Reviewers are invited from all over the globe. After rigorous reviews, five papers were accepted. Each of these accepted papers addresses one particular challenge with innovative solutions. The paper by Y. Song and her coauthors from Shandong University (Weinhai) and Beijing Jiaotong University presents an improved parallel five-level reinjection current source converter for self-commutation of thyristor converter. The simulation and experimental results verify the effectiveness of the proposed reinjection circuit driving method. The paper by F. Yang and his coauthors from China University of Mining and Technology and Zhengzhou University proposes a method considering different thermal stresses and fault tolerance capacity is proposed to analyze the reliability of switched reluctance generators. The results show that the two-level Markov model is the most suitable when compared to the static model and the one-level Markov model. The paper by A. Sajja and his coauthors from Anurag University and K L University presents a chopper-stabilized amplifier with a cascoded operational transconductance amplifier. The total power consumption is 451 nW with a supplied voltage of 800mV. The Gain and common mode rejection ratio are 48 dB and 78 dB, respectively. The paper by M. Dai and his coauthors from Civil Aviation Flight University of China presents a dc-port voltage balance strategy for three-phase cascaded H-bridge rectifier based on logic combination modulation, which can work reliably and quickly no matter facing the problem as load-removed change or the ordinary operating conditions. The paper by H. Chen and his coauthors from China University of Mining and Technology, University of Engineering and Technology, Saint Petersburg National Research University of Information Technologies Mechanics and Optics, National Research University Moscow Power Engineering Institute, Asian University, West Pomeranian University of Technology and Peter the Great St Petersburg Polytechnic University presents a power converter and its control strategy to improve the efficiency of switched reluctance generators (SRGs). The resul
{"title":"Guest editorial: emerging technologies for highly-reliable power electronic systems in miniaturized electronic devices","authors":"Zhaoyang Zhao, Chen Liu, Shuai Xu, Hongbo Zhao","doi":"10.1108/mi-07-2023-204","DOIUrl":"https://doi.org/10.1108/mi-07-2023-204","url":null,"abstract":"Power electronic converters are widely used to power miniaturized electronic devices in many important applications, such as communication base stations, data centers, wearable devices, smart homes and energy harvesting. However, power electronic converters are often affected by mechanical, electrical and thermal stresses, which contributes to increased equipment failures. Considering failed components may cause unexpected interruptions and serious safety issues, it is becoming even more important to improve the reliability of power electronic components and circuits. The call for paper of the Special Issue on Emerging Technologies for Highly-Reliable Power Electronic Systems in Miniaturized Electronic Devices was published in May 2022. We received eight submissions in total. Reviews were promptly organized by Guest Editors fromChina and Europe. Reviewers are invited from all over the globe. After rigorous reviews, five papers were accepted. Each of these accepted papers addresses one particular challenge with innovative solutions. The paper by Y. Song and her coauthors from Shandong University (Weinhai) and Beijing Jiaotong University presents an improved parallel five-level reinjection current source converter for self-commutation of thyristor converter. The simulation and experimental results verify the effectiveness of the proposed reinjection circuit driving method. The paper by F. Yang and his coauthors from China University of Mining and Technology and Zhengzhou University proposes a method considering different thermal stresses and fault tolerance capacity is proposed to analyze the reliability of switched reluctance generators. The results show that the two-level Markov model is the most suitable when compared to the static model and the one-level Markov model. The paper by A. Sajja and his coauthors from Anurag University and K L University presents a chopper-stabilized amplifier with a cascoded operational transconductance amplifier. The total power consumption is 451 nW with a supplied voltage of 800mV. The Gain and common mode rejection ratio are 48 dB and 78 dB, respectively. The paper by M. Dai and his coauthors from Civil Aviation Flight University of China presents a dc-port voltage balance strategy for three-phase cascaded H-bridge rectifier based on logic combination modulation, which can work reliably and quickly no matter facing the problem as load-removed change or the ordinary operating conditions. The paper by H. Chen and his coauthors from China University of Mining and Technology, University of Engineering and Technology, Saint Petersburg National Research University of Information Technologies Mechanics and Optics, National Research University Moscow Power Engineering Institute, Asian University, West Pomeranian University of Technology and Peter the Great St Petersburg Polytechnic University presents a power converter and its control strategy to improve the efficiency of switched reluctance generators (SRGs). The resul","PeriodicalId":49817,"journal":{"name":"Microelectronics International","volume":" ","pages":""},"PeriodicalIF":1.1,"publicationDate":"2023-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"43427138","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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